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20093D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESLWang, W.C.; 張書通; Chang, S.T.; Huang, J.; Kuang, S.J.-
1-十一月-2017A Stress Response Model for Hole Mobility in the Inversion Layer of Ge MOSFETsChen, Kuan-Ting; Lee, Chia-Feng; He, Ren-Yu; 張書通; Chang, Shu-Tong-
2005Abnormal hole mobility of biaxial strained SiLiao, M.H.; 張書通; Chang, S.T.; Lee, M.H.; Maikap, S.; Liu, C.W.-
2009Adhesion investigation of low-k films system using 4-point bending testLee, C.C.; 張書通; Huang, J.; Chang, S.T.; Wang, W.C.-
2011Analysis and Modeling of Nano-Crystalline Silicon TFTs on Flexible Substrate with Mechanical StrainLee, M.H.; 張書通; Chang, S.T.; Hsieh, B.F.; Huang, J.J.; Lee, C.C.-
2012Analysis of dispersion relation for spoof surface plasmons using modal expansion method蕭進松; 張書通; 黃家健; 陳柏伸; Chen, Po-Sheng; 中興大學-
2012Applications of Novel Semiconductor Alloy Materials on Advanced Nanoscale Cmos Devices張書通; 國立中興大學電機工程學系(所); 行政院國家科學委員會-
2009Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineeringChang, S.T.; 張書通; Liao, M.H.; Lee, C.C.; Huang, J.K.; Wang, W.C.; Hsieh, B.F.-
2007Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (111) substrateMaikap, S.; 張書通; Lee, M.H.; Chang, S.T.; Liu, C.W.-
2009Comprehensive study of the Raman shifts of strained silicon and germaniumPeng, C.Y.; 張書通; Huang, C.F.; Fu, Y.C.; Yang, Y.H.; Lai, C.Y.; Chang, S.T.; Liu, C.W.-
1-十一月-2017Detection of Charged Proteins with a Bio-Sensor Device Using a Semiconductor-on-Insulator StructureHe, Ren-Yu; Chen, Kuan-Ting; Lee, Chia-Feng; 張書通; Chang, Shu-Tong-
2011Driving Current Enhancement of Strained Ge (110) p-Type Tunnel FETs and Anisotropic EffectLee, M.H.; 張書通; Chang, S.T.; Wu, T.H.; Tseng, W.N.-
2011Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealingChiu, C.J.; 張書通; Pei, Z.W.; Chang, S.T.; Chang, S.P.; Chang, S.J.; 裴靜偉-
2010Effective mass and subband structure of strained Si in a PMOS inversion layer with external stressChang, S.T.; 張書通; Huang, J.; Tang, M.; Lin, C.Y.-
2009Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon CapacitorsPeng, C.Y.; 張書通; Yang, Y.J.; Fu, Y.C.; Huang, C.F.; Chang, S.T.; Liu, C.W.-
2010Electrical Characteristics of SiGe-base Bipolar Transistors on Thin-film SOI SubstratesLiao, S.H.; 張書通; Chang, S.T.-
2006Electron and hole mobilities in orthorhombically strained siliconChang, S.T.; 張書通-
1-十一月-2017Electron Mobility Calculation for Monolayer Transition Metal Dichalcogenide Alloy Using Tight-Binding Band StructureChen, Kuan-Ting; He, Ren-Yu; Lee, Chia-Feng; Wu, Ming-Ting; 張書通; Chang, Shu-Tong-
2007Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistorsYang, Y.J.; 張書通; Ho, W.S.; Huang, C.F.; Chang, S.T.; Liu, C.W.-
2005Electron transport model for strained silicon-carbon alloyChang, S.T.; 張書通; Lin, C.Y.-