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日期標題作者全文
19991150℃熱處理時Cz矽晶片內氧凝聚物及相關缺陷的成長貢中元; 歐陽浩; 李士傑-
六月-1997450℃退火對Cz矽晶內氧凝聚遲滯現象所造成的影響貢中元; 徐瑋; 劉進明; 工學院-
2003The Bulk Defect Generation in Heavy Doped Cz Silicon after a Simulated CMOS Thermal Process貢中元; 行政院國家科學委員會; 中興大學電機工程系-
2010Comparisons of Transparency AZO Films Using Sol-Gel and RF Sputtering MethodsShih, N.F.; 貢中元; Chen, S.T.; Chang, C.C.; Kung, C.Y.; Chen, B.J.; Yao, P.C.-
2004CVD氧化層表面特性對晶圓接合之影響貢中元; 卓銘欣-
2010Deposition of uniform mu c-Si : H layers on plasma etched vertical ZnO nanowiresLin, Y.R.; 貢中元; Chang, C.W.; Chen, Y.H.; Liu, J.C.; Kung, C.Y.-
2004Development of High-Power white(blue)LEDs with Heat-Dissipation Mirror Substrates (I)武東星; 洪瑞華; 貢中元; 行政院國家科學委員會; 國立中興大學材料工程學系(所)-
2002The Effect of High Temperature Anneal on the Warpage Control of the Poly-back Silicon Wafers貢中元; 國立中興大學電機工程學系; 行政院國家科學委員會-
2009Effects of Boron Penetration and Poly Gate Depletion on Characteristics of Metal-Oxide-Semiconductor Capacitors貢中元; Chung-Yuan Kung; 鄭錦隆; Chin-Lung Cheng; 武東星; Dong-Sing Wuu; Shih, Yi-Chun; 石逸群; 中興大學-
2012Effects of different catalysts on the growth of ZnO nanorods for the application of dye-sensitized solar cells陳宏仁; 劉漢文; Chung-Yuan Kung; 貢中元; 江朋威; Chiang, Peng-Wei; 中興大學-
2007Effects of hydrogenated-amorphous-silicon layer on the performance of SiGe metal-semiconductor-metal photodetectorsHwang, J.D.; 貢中元; Chen, Y.H.; Kung, C.Y.; Liu, J.C.-
2010The effects of the compact blocking layer in the dye-sensitized solar cell汪芳興; Fang-Hsing Wang; 陳宏仁; Hone-Zern Chen; 貢中元; Chung-Yuan Kung; Hsieh, Min-Kang; 謝旻剛; 中興大學-
2010Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatmentChang, H.P.; 汪芳興; Wang, F.H.; Wu, J.Y.; Kung, C.Y.; Liu, H.W.; 貢中元-
2009Fabrication and Modeling of SiGe Metal-Semiconductor-Metal Photodetectors with Amorphous Silicon Passivation Layer (I)貢中元; 國立中興大學電機工程學系(所); 行政院國家科學委員會-
2009Fabrication of post plasma treated aluminum doped zinc oxide thin films for solar cell applications林祐仲; Yow-Jon Lin; 貢中元; Chung-Yuan Kung; 汪芳興; Fang-Hsing Wang; Chen, Ying-Ching; 陳穎慶; 中興大學-
2007High photo-to-dark-current ratio in SiGe/Si schottky-barrier photodetectors by using an a-Si : H cap layerHwang, J.D.; 貢中元; Chen, Y.H.; Kung, C.Y.; Liu, J.C.-
2007Improving the performance of SiGe metal-semiconductor-metal photodetectors by using an amorphous silicon passivation layerChen, Y.H.; 貢中元; Hwang, J.D.; Kung, C.Y.; Chen, R.S.; Wei, C.S.; Wu, C.K.; Liu, J.C.-
1996The Inflexence of Oxygen Precipitatin Rate on Wafer Warpage Resistance貢中元; 國立中興大學電機工程學系; 行政院國家科學委員會-
1996The influence of 450 C heat-treatment on the oxygen precipitation in czochralski silicon wafer貢中元; Cai, Zhe Zheng; 蔡哲正; 徐瑋; Xu, Wei-
2009Investigation of Electrical Properties of Thermally Annealed SiGe Metal-Oxide-Semiconductor Capacitors Prepared by Liquid-Phase Deposition of Silicon DioxideKung, C.Y.; 貢中元; Hwang, J.D.; Chen, Y.H.; Chen, P.S.; Chan, H.J.-