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日期標題作者全文
2010An AlN Sacrificial Buffer Layer Embedded into the InGaN Light Emitting Diodes for a Chemical Lateral Etching ProcessLin, C.F.; 林佳鋒; Dai, J.J.; Lin, M.S.; Chen, C.C.-
2010An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off ProcessLin, C.F.; 林佳鋒; Dai, J.J.; Lin, M.S.; Chen, K.T.; Huang, W.C.; Lin, C.M.; Jiang, R.H.; Huang, Y.C.-
2005Assembled GaN : Mg inverted hexagonal pyramids formed through a photoelectrochemical wet-etching processLin, C.F.; 張守一; Dai, J.J.; Yang, Z.J.; Zheng, J.H.; Chang, S.Y.-
2009Blue light-emitting diodes with a roughened backside fabricated by wet etchingLin, C.F.; 林佳鋒; Lin, C.M.; Chen, K.T.; Huang, W.C.; Lin, M.S.; Dai, J.J.; Jiang, R.H.; Huang, Y.C.; Chang, C.Y.-
2010Chemical Lift-Off Process for Blue Light-Emitting DiodesLin, C.F.; 林佳鋒; Dai, J.J.; Wang, G.M.; Lin, M.S.-
2011Chemical-Mechanical Lift-Off Process for InGaN Epitaxial LayersLin, M.S.; 張守一; Lin, C.F.; Huang, W.C.; Wang, G.M.; Shieh, B.C.; Dai, J.J.; Chang, S.Y.; Wuu, D.S.; Liu, P.L.; Horng, R.H.; 洪瑞華; 武東星; 林佳鋒-
2006Enhanced light output power in InGaN light-emitting diodes by fabricating inclined undercut structureLin, C.F.; Yang, Z.J.; Chin, B.H.; Zheng, J.H.; Dai, J.J.; Shieh, B.C.; Chang, C.C.-
2010Enhanced the Light Extraction Efficiency of an InGaN Light Emitting Diodes with an Embedded Rhombus-Like Air-Void StructureDai, J.J.; 林佳鋒; Lin, C.F.; Wang, G.M.; Lin, M.S.-
2006Fabrication InGaN nanodisk structure in GaN reverse hexagonal pyramidLin, C.F.; Dai, J.J.; Zheng, J.H.; Yang, Z.J.-
2010Green Light-Emitting Diodes with a Photoelectrochemically Treated Microhole-Array PatternLin, C.F.; 林佳鋒; Lin, C.M.; Chen, K.T.; Lin, M.S.; Dai, J.J.-
2006High-efficiency InGaN light-emitting diodes via sidewall selective etching and oxidationLin, C.F.; Yang, Z.J.; Zheng, J.H.; Dai, J.J.-
2006High-efficiency InGaN-based light-emitting diodes with nanoporous GaN : Mg structureLin, C.F.; Zheng, J.H.; Yang, Z.J.; Dai, J.J.; Lin, D.Y.; Chang, C.Y.; Lai, Z.X.; Hong, C.S.-
2010InGaN Light-Emitting Diodes With the Inverted Cone-Shaped Pillar StructuresLin, C.F.; 林佳鋒; Lin, C.M.; Chen, K.T.; Dai, J.J.; Lin, M.S.-
2007The self-assemble GaN : Mg inverted hexagonal pyramids formatted by photoelectrochemical wet-etching processLin, C.F.; 張守一; Yang, Z.J.; Dai, J.J.; Zheng, J.H.; Chang, S.Y.-