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十二月-1997(1st Asia-Pacific International Symposium on the Basic and Application of Plasma Technology,p195-p198)Characterization of a-SiGe:H Films Deposited by Pulse RF Power江雨龍; Yeu-Long Jiang; Y. L. Jiang; T. Y. Yew; 國立中興大學光電工程研究所-
十二月-2000(2000 IEDMS Symposium A,p218-p221)Low dielectric constant and high thermal stability fluorinated amorphous carbon films江雨龍; Yeu-Long Jiang; Y. L. Jiang; K. S. Wu; K. S. Lin; L. H. Chen; W. H. Wu; C. H. Wu; Y. S. Liao; L. H.Chang; 國立中興大學光電工程研究所-
十二月-2000(2000 IEDMS Symposium A,p241-p243)A Novel Design of a-Si:H Photodetector with Stacked Ferroelectric Capacitor Layer a X-ray Detection in Medical ImagingApplications江雨龍; Yeu-Long Jiang; S. S. Fann; S. K. Chuang; Y. L. Jiang; H. L. Hwang; 國立中興大學光電工程研究所-
十二月-2000(2000 IEDMS Symposium A,p285-p288)High crystallinity and large grain size c-Si:H films deposition by ECR-CVD江雨龍; Yeu-Long Jiang; Y. L. Jiang; S. H. Chen; L. H. Chen; K. S. Lin; W. H. Wu; C. H. Wu; Y. S. Liao; L. H. Chang; 國立中興大學光電工程研究所-
十一月-1998Aluminum induced Crystallization of Hydrogenated Amorphous Silicon Films at Low Temperature江雨龍; Yeu-Long Jiang; Y. L. Jiang; M. C. Lee; 國立中興大學光電工程研究所-
1992(Amorphous and Microcrystalline Semiconductor Devices,Vol.II:613-640)Ch13 Resonant Tunneling,Hot Electron Generation and Random Telegraphic Noise in Amorphous Double Barrier StructuresJ. Kanicki; H. L. Hwang; Y. L. Jiang; 國立中興大學光電工程研究所-
五月-2003(Appl. Surface Science,212-213:765-769)An innovative a-Si:H p-i-n based x-ray medical image detector for low dosage and long exposure applications江雨龍; Yeu-Long Jiang; S. S. Fann; Y. L. Jiang; H. L. Hwang; 國立中興大學光電工程研究所-
1991(Applied Surface Science,48/49:392-404)Electron Transport in Hydrogenated Amorphous Silicon Quantum Wells江雨龍; Yeu-Long Jiang; Y. L. Jiang; H. L. Hwang; 國立中興大學光電工程研究所-
十一月-1997(EDMS'97,p341-p344)a-SiGe:H Films Deposited by Pulse RF Power江雨龍; Yeu-Long Jiang; Y. L. Jiang; T. Y. Yew; 國立中興大學光電工程研究所-
十一月-1997(EDMs'97,p500-p503)Characterization of a-Si:H Films Prepared by Pulse RF Power江雨龍; Yeu-Long Jiang; Y. L. Jiang; T. Y. Yew; 國立中興大學光電工程研究所-
1997The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250 ℃江雨龍; Yeu-Long Jiang; Y. L. Jiang; R. Y. Wang; H. L Hwang; T. R. Yew; 國立中興大學光電工程研究所-
1994(Extended Abstracts of 1994 SSDM,p527)Very Low Temperature Deposition ofMicro/Polycrystalline Silicon Films Made by Hydrogen Dilution With PE-CVD and ECR-CVD江雨龍; Yeu-Long Jiang; K. C. Wang; Y. L. Jiang; T. R. Yew; H. L. Hwang; 國立中興大學光電工程研究所-
1994(Extended Abstracts of ICSFS-7,p361)Hydrogenated Amorphous Silicon X-ray Detector For Medical Applications江雨龍; Yeu-Long Jiang; Y. L. Jiang; L. S. Chuang; H. L. Hwang; 國立中興大學光電工程研究所-
1994(Extended Abstracts of ICSFS-7,p445)P type a-SiC:H Window Layer Deposited by Novel Boron-atom-treatment method江雨龍; Yeu-Long Jiang; Y. L. Jiang; Y. H. Shing; S. H. Lee; H. L. Hwang; 國立中興大學光電工程研究所-
1988(Extended Abstracts of the 2Oth Conference onSolid State Devices and Materials,p239-p242)Evidence of Resonant Tunneling in a-Si:H/a-Sil-xCx:H Superlattice江雨龍; Yeu-Long Jiang; Y. L. Jiang; H. L. Hwang; C. E. Nebel; G. H. Bauer; 國立中興大學光電工程研究所-
十一月-1998The I-V Characteristics of p/i/n a-Si:H Solar Cell with the I layer Deposited with Pulse Modulation RF Power江雨龍; Yeu-Long Jiang; Y. L. Jiang; C. C. Kuo; 國立中興大學光電工程研究所-
1998(IEDMS 1998,D1-9:314)A Novel Design and Fabrication of Hydrogenated Amorphous Silicon X-ray Detectors for Medical Imaging Applications江雨龍; Yeu-Long Jiang; S. S. Fann; Y. L. Jiang; J. C. Wu; H. L. Hwang; 國立中興大學光電工程研究所-
1989(IEEE Transactions on Electron Devices,36(12):2816-2820)Field-Drifting Resonant Tunneling Through a-Si:H/a-Sil-xCx:H Quantum Wells at Different Locations of the i-Layer of a p-i-n Structure江雨龍; Yeu-Long Jiang; Y. L. Jiang; H. L. Hwang; 國立中興大學光電工程研究所-
二月-2003(IEEE,Transactions on Electron Devices,50(2):341-346)Operating principles and performance of a novel a-si:h p-i-n based x-ray detector for medical image applications江雨龍; Yeu-Long Jiang; S. S. Fann; Y. L. Jiang; H. L. Hwang; 國立中興大學光電工程研究所-
1988(Japanese Jorunal of Applied Physcis,27(12):L2434-2437)Field-Drifting Resonance Tunneling Through a-Si:H/a-Sil-xCx:H Double Barrier in the p-i-n Structure江雨龍; Yeu-Long Jiang; Y. L. Jiang; H. L. Hwang; 國立中興大學光電工程研究所-