Geo Map
地區 #
USC - 美國、加拿大 10652
CH - 中國 2009
EUR - 歐洲 1386
JPN - 日本、南韓、台灣 807
ASIA - 亞洲其他地區 4
HK - 香港 2
AUS - 澳洲、紐西蘭 1
全部 14861
國家 #
US - 美國 10652
CN - 中國 2009
TW - 台灣 760
GB - 英國 533
RU - 俄羅斯 427
DE - 德國 257
UA - 烏克蘭 146
JP - 日本 46
CH - 瑞士 16
FR - 法國 6
other - 其他國家 85
全部 14937
城市 #
Redmond 2801
Beijing 1871
Sunnyvale 1813
Seattle 809
Mountain View 521
San Francisco 511
Taipei 283
Fremont 278
Ashburn 217
Boardman 214
other 5619
全部 14937
最多瀏覽的項目 #
ID: 17284 - 以紙型酵素免疫連結吸附法檢測前房液中血管內皮生長因子之濃度 326
ID: 59967 - Low-frequency noise properties of GaN nanowires 246
ID: 17266 - Fabrication of electrical device based on gold nanoparticles: The impact of molecule separation and linkage on electrical conduction properties of gold nanoparticle assembly 245
ID: 17287 - 利用顯微拉曼光譜分析三維矽通孔表面結構應力分佈 229
ID: 17288 - 化學浴沉積硫化銅物理性質之研究 227
ID: 17274 - 細胞計數法的研發與TiO2-Mica基板對細胞成長影響的探討 211
ID: 59959 - Correlated Insulating states of an Interacting Bilayer Electron System 192
ID: 34368 - (Physical Review B, 44(Rapid Communications):5947-5950)Missing integral quantum Hall effect in a wide single quantum well 181
ID: 17263 - 磁性薄膜之鐵磁共振特性測量 179
ID: 34389 - (Journal of Vacuum Science and Technology B, 87:388-390)MBE growth of high-quality two-dimensional electron system 175
ID: 59970 - 1/f noise of GaN nanowires 172
ID: 17296 - 生長於氧化釓/ (111) 矽基板上氮化鎵薄膜內部缺陷特性分析之研究 171
ID: 59957 - Magnetic Field Induced Phase Transitions in Doped GaAs Quantum Wells 169
ID: 34403 - (Applied Physics Letters, 85:4196-4198)High-sensitivity microwave vector detection at extremely low-power levels for low-dimensional electron systems 167
ID: 17275 - 銅硫化物Cu2-xS量子點之合成及在敏化太陽能電池上的應用 165
ID: 17280 - La0.18Ca0.82(FeAs)2超導單晶熱擾動與上臨界磁場之研究 163
ID: 34237 - Correlated Electric Fluctuations in GaN Nanowire Devices 162
ID: 59968 - Non-local low-frequency non-equilibrium excess noise of GaN nanowires 162
ID: 34396 - (The Review of scientific instruments, 76:084704.1-084704.7)Instrumentation of a high-sensitivity microwave vector detection system for low-temperature applications 160
ID: 17268 - The Characterization and Fabrication of Superconducting Coplanar Waveguide Resonators 157
ID: 59952 - Edge magneto-plasma excitations in quantum wire arrays 157
ID: 59953 - (Proceedings of APAM 2002 international conference on international collaboration and networking: creating a global nanotechnology:101-102)Probing semiconductor nanostructures by a pulsed phase-lock-loop system 156
ID: 34399 - (Applied Physics Letters, 85:6107-6109)The evolution of electroluminescence in Ge quantum-dot diodes with the fold number 154
ID: 92538 - Nearly isotropic piezoresistive response due to charge detour conduction in nanoparticle thin films 154
ID: 17277 - 生長於氧化釓/ (111) 矽基板上氮化鎵薄膜內部缺陷特性分析之研究 153
ID: 34331 - (Applied Physics Letters, 90:223117.1-223117.3)Contact to ZnO and intrinsic resistances of individual ZnO nanowires with a circular cross section 153
ID: 34364 - (Surface Science, 263:152)Magnetotransport properties of double-layer systems in single wide quantum wells 152
ID: 59965 - (Proceedings of the 20th International Conference on the Physics of Semiconductors:845-848)Fractional quantum Hall effect in an electron system with variable layer thickness 151
ID: 17295 - 熱溶劑法製作Sb2Se3量子點液態敏化太陽能電池 149
ID: 59966 - Temperature Dependence of the Excess Noise of a GaN Nanowire Device 146
ID: 59956 - A+Light-Induced+Tunneling+State+In+a+Submicron+Double+Barrier+Tunneling+Diode+With+a+Center-Doped+Well 145
ID: 59971 - High-frequency dynamic magnetotransport properties of quantum wires 145
ID: 34406 - (Applied Physics Letters, 81:3007-3009)Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates 144
ID: 59963 - Correlated Electric Fluctuations in GaN Nanowire Device 144
ID: 17293 - 氧化銦錫電流展開層蝕洞對於藍光二極體出光效率影響之研究 142
ID: 59958 - Correlated bilayer electron states 142
ID: 34384 - (Applied Physics Letters, 57:2130-2132)Novel superlattice in a selectively-doped wide parabolic well with a modulated potential 141
ID: 59960 - Correlated states and finite temperature quantum Hall transitions in bilayer electron systems 140
ID: 34243 - Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots 139
ID: 34381 - (Physical Reveiew Letters, 65:2916-2919)Collapse of the fractional quantum Hall effect in an electron system with large layer thickness 137
ID: 59962 - (Proceedings of the 21th International Conference on the Physics of Semiconductors:935-938)Observaton of =1/2 and 1/3 fractional quantum Hall states in a double layer electron system 134
ID: 59954 - Using a pulsed phase lock loop to detect high-frequency magnetotransport properties of two-dimensional electron systems 133
ID: 59950 - 基礎物理 132
ID: 59972 - Edge Magnetoplasmon of Quantum Wires 132
ID: 34250 - Fabrication method of high-quality Ge nanocrystals on patterned Si substrates by local melting point control 131
ID: 34334 - (Applied Physics Letters, 62:3120-3122)High-quality two-dimensional electron system confined in an AlAs quantum well 131
ID: 17264 - 金奈米粒子元件之製作:自組裝方式與修飾分子長度差異對電性的影響 130
ID: 59955 - (Proceedings of SPIE, l:4283)Characteristics of dark current and photocurrent in superlattice infrared photodetectors 130
ID: 59961 - One-component to two-component transitions of fractional quantum Hall states in a wide quantum well 129
ID: 34285 - (IEEE Transactions on Applied Superconductivity, 17:1831-1834)Attenuation of Electromagnetic Pulse Using High Temperature Superconductor 128
ID: 17291 - 摻雜奈米級氧化鋁顆粒對於固態電解質之鋰電池研究 126
ID: 17298 - 鉛銻硫三元金屬硫化物半導體敏化太陽能電池 126
ID: 59951 - (High Magnetic Fields in Semiconductor Physics)Dependence of the fractional quantum Hall effect energy gap on electron layer thickness 126
ID: 17290 - 摻錳氧化鋅奈米線的磁性及光電特性量測 125
ID: 59964 - Fractional quantum Hall effect in multilayer electron systems 125
ID: 34299 - (Physica E, 01:172-175)Interaction-induced interlayer charge transfer at high magnetic fields 124
ID: 34319 - (Semiconductor Science and Technology, 11(11s):1539-1545)Correlated bilayer electron states 123
ID: 34374 - (Physical Review B, 41:8449-8460)Fractional quantum Hall effect in very low density GaAs/AlGaAs Heterostructures 123
ID: 34342 - (Physical Review Letters, 68:1188-1191)Observation of a reentrant insulating phase near the 1/3 fractional quantum Hall liquid in two-dimensional hole system 122
ID: 17269 - 利用掃描式近場光學顯微鏡研究藍光LED表面發光分佈 118
ID: 34204 - Angle-Resolved Field Emission of Individual Carbon Nanotubes 118
ID: 34348 - (Physical Review Letters, 68:1379-1382)Observation of a v=1/2 fractional quantum Hall state in a double layer electron system 118
ID: 35293 - (Physica E: Low-dimensional Systems and Nanostructures, 06(1-4):331-334)A Light-Induced Tunneling State In a Submicron Double Barrier Tunneling Diode With a Center-Doped Well 118
ID: 92535 - A Nanoscale-Localized Ion Damage Josephson Junction Using Focused Ion Beam and Ion Implanter 118
ID: 17299 - 銅銦鎵硒薄膜摻雜及未摻雜鈉元素對其物理特性影響之研究 117
ID: 34392 - (Japanese Journal of Applied Physics, 46:430-433)New Technique for Fabrication of Individual Carbon-Nanotube Field Emitters 117
ID: 59969 - High-frequency Dynamic Magnetotransport Properties of Mesoscopic Electronic Systems 117
ID: 34345 - (Physical Review Letters, 69:3551-3554)Correlated states of an electron system in a wide quantum well 116
ID: 34313 - (Physical Review Letters, 77:1813-1816)Evidence for a bilayer quantum Wigner solid 115
ID: 34359 - (Physical Review B, 46:13639-13642)Effect of Landau-level mixing on quantum-liquid and solid states of two-dimensional hole systems 115
ID: 34327 - (Physical Review B, 50:17725-17728)Anomalous temperature dependence of the correlated v=1 quantum Hall effect in bilayer electron systems 114
ID: 17300 - 鎳鐵微結構的鐵磁共振特性研究:對外加磁場方向的影響 113
ID: 17285 - 具聚乙烯苯酚絕緣層非晶銦鎵鋅氧薄膜電晶體之低頻雜訊特性 112
ID: 34273 - Optical Pattern Transitions from Modulation to Transverse Instabilities in Photorefractive Crystals 112
ID: 34290 - (Physical Review B, 58:10629-10633)Magnetic-field-induced delocalization in center-doped GaAs/AlGaAs multiple quantum wells 112
ID: 17283 - 以SnO2光電極製作Bi2S3量子點液態敏化太陽電池之效能探討 110
ID: 17294 - 無電極電鍍奈米銀球探針之研究與應用 110
ID: 17292 - 新型P通道側壁耦合閘極多次寫入非揮發性記憶體 109
ID: 34279 - Coil-in-Coil Carbon Nanocods: 11 Gram-Scale Synthesis, Single Nanocod Electrical Properties, and Electrical Contact Improvement 109
ID: 17281 - Y3Ba5(Cu1-xFex)8O18-δ拉曼光譜的研究 108
ID: 17286 - 利用微波共振器結合鎖相迴路的即時微米粒子偵測 108
ID: 92537 - Highly sensitive amorphous In–Ga–Zn–O films for ppb-level ozone sensing: Effects of deposition temperature 107
ID: 17289 - 同調光在光折變晶體中的光調制不穩定圖案演變 106
ID: 34309 - (Physical Review Letters, 79:2722-2725)Spontaneous interlayer charge transfer near the magnetic quantum limit 106
ID: 34338 - ( Physica B, 184:043-050)Fractional quantum Hall effect in multilayer electron systems 103
ID: 17273 - 高溫超導釔鋇銅氧不同厚度微橋的約瑟芬效應 102
ID: 17270 - 電洞型鐵基超導體La1-xSrxFeAsO之熱擾動研究 101
ID: 17267 - 鐵硒類超導體FeSexTe1-x物理性質之研究 100
ID: 34296 - (Physical Review Letters, 81:693-696 )Magnetic-field-induced triple-layer to bilayer transition 100
ID: 34354 - (Physical Review B, 46:9776-9979)Quantum Hall effect in a triple-layer electron system 100
ID: 34377 - (Nanotechnology, 18:075403)Mobility asymmetry in InGaAs/InAlAs hetrostructures with InAs quantum wires 100
ID: 34304 - (Physical Review B, 56:15238-15241)Magnetic-field-induced insulator-quantum Hall conductor-insulator transitions in doped GaAs/AlGaAs quantum wells 99
ID: 59949 - 物質科學-物理篇 94
ID: 17276 - 可控式約瑟夫森接面磁通量子位元電感效應之研究 92
ID: 34316 - (Surface Science, 361:106-112)Correlated insulating states of an interacting bilayer electron system 92
ID: 17272 - 高溫超導釔鋇銅氧奈米橋的特性 91
ID: 34255 - Dynamic Probing of Nanoparticle Stability In Vivo: A Liposomal Model Assessed Using In Situ Microdialysis and Optical Imaging 89
ID: 17282 - 三元化合物AgMS2(M=Sb,Bi)量子點之合成及在敏化太陽電池上的應用 87
ID: 34261 - Promotion of Generation of Hydrogen by Splitting of Water by CNT Over Pt/TiO(2) Catalysts 87
ID: 17265 - 即時熱對流聚合酶鏈鎖反應法之光譜感測系統 86
全部 13579


全部 七月 八月 九月 十月 十一月 十二月 一月 二月 三月 四月 五月 六月
2014/20151141 0000 155223 228101 8689103156
2015/20162819 193250352431 201278 24563 226239133208
2016/20173730 294490187348 348440 631615 000377
2017/20183514 6282549597 274525 452303 24319586362
2018/20192548 196197319195 188286 411115 91232109209
2019/20201185 521213124327 00 00 0000
Ever 14937