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標題: 1150℃熱處理時Cz矽晶片內氧凝聚物及相關缺陷的成長
The growth of oxygen precipitate and related defects in Czochralski silicon annealed at 1150℃
作者: 李士傑
關鍵字: 氧凝聚物群
silicon interstitial
出版社: 材料工程學研究所
摘要: 本實驗主要觀察氧化層作用所產生的間隙矽對晶片內部微結構的影響,熱處理的成長溫度設為1150℃,並與過去以1000℃為成長溫度的結果做綜合性的比較。 本實驗結果與不同的是,當以1000℃做為成長溫度時,短時間低溫孕核的試片,內部微觀缺陷主要結構為氧凝聚物群,但當改以1150℃做為成長溫度時,不論有無經過低溫孕核熱處理,皆無發現氧凝聚物群。 1150℃做為成長溫度時,短時間低溫孕核,疊差的長度非常長,但不均勻(10μm∼100μm)且密度較低。隨著低溫孕核熱處理時間的增加,疊差長度逐漸減短(4∼5μm)但較均勻且密度逐漸增加。而以1000℃做為成長溫度的疊差長度並不會隨著低溫孕核熱處理的時間而改變,且很均勻約4∼5μm,但密度仍然隨著低溫孕核熱處理的時間增加而增加。 本實驗發現當試片經過短時間高溫濕氧化熱處理後的氧凝聚速率較未經高溫濕氧化的試片為快,並且以1150℃做為成長溫度的氧凝聚速率較以1000℃做為成長溫度的氧凝聚速率快。此結果與預期溼氧化應造成的結果有極大的差異。
The main purpose of this research is to study the influence of the silicon interstitials generated during wet oxidation on the growth of microdefects in a two-step anneals. The low-high two-step anneal scheme using 650℃ as nucleation temperature and 1150℃ as growth temperature is the base-line process. The results observed in this research is quiet different from what have been observed using 1000℃ as growth temperature. With a short nucleation anneal, the cluster precipitates is the dominant type of defect when growth temperature is 1000℃. However, when growth temperature is 1150℃, cluster precipitates is never found in these samples. At 1150℃ anneal, the stacking faults length is very long , (10μm∼100μm),but density is low when nucleation anneal is short. When nucleation annealing time increase to 128h, the stacking faults become short, but uniform in length (4μm∼5μm), and density become high. A dissolution test is conducted to study the evolution of stacking faults at high temperature anneal. The most striking result is that the short wet oxidation enhances the oxygen precipitation rate at 1150℃. This result is against conventional understanding about the role of silicon interstitials generated during oxidation.
Appears in Collections:材料科學與工程學系



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