Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10070
標題: 利用光輔助電化學技術誘發多孔隙氮化鎵磊晶成長
Photoelectrochemical Process Induced the Nanoporous GaN Epitaxial Growth
作者: Yu, Tzu-Yun
余諮芸
關鍵字: GaN
氮化鎵
Photoelectrochemical
Nanoporous
電化學
多孔
出版社: 材料科學與工程學系所
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摘要: 本論文採用光輔助電化學氧化製程,在圖案化氮化鎵模板製作多孔隙氮化鎵與氧化結構,利用再磊晶成長氮化銦鎵發光元件結構,探討埋入結構對發光元件特性影響,論文將分成兩部分元件結構進行探討: 在第一部分實驗中,在具氧化孔洞埋入結構之發光二極體結構中,在20 mA操作電流下,Holes-Oxide LED電激發光波長較標準Holes-ST LED藍移2.86 nm,且亮度提升70%。Holes-ST LED及Holes-Oxide LED的發光效率衰退(Efficiency Droop)分別為51 %及19 %。 在第二部分實驗中,在具氧化奈米柱埋入結構之發光二極體結構中,Rods-Oxide LED在20毫安培驅動下,發光亮度較標準Rods-ST LED增加3.2倍。當改變反向偏壓從0 V至-8 V時,所量測之偏壓光激螢光波長藍移量分別為3.08 nm(Rods-ST LED)及2.53 nm(Rods-Oxide LED),Rods-Oxide LED波長藍移量較少,表示在量子井之壓電場較小所致。且Rods-ST LED及Rods-Oxide LED的內部量子效率分別為55 %及85 %。可觀察到Rods-Oxide LED具有較低之壓電場效應與較高之內部量子效率。 在氮化銦鎵/氮化鎵多重量子井發光二極體中加入一層經光輔助電化學(PEC)氧化所產生的奈米孔洞結構(Holes-Oxide LED及Rods-Oxide LED)有助於光取出效率提升、改善發光效率衰退(Droop)與降低量子井之壓電場大小,有助於提升氮化銦鎵之外部量子效率。
In this thesis, the patterned oxidized GaN templates were fabricated through the photoelectrochemical (PEC) wet oxidation processes for the following epitaxial regrowth process. The optical properties of the InGaN light-emitting diode (LED) with the embedded GaOx structures were analyzed in detail into two parts. In the first part, the InGaN LED structure was re-grown on the PEC oxidized patterned-holes structure. In the Holes-Oxide LED, the peak wavelength of electroluminescence (EL) spectra had a 2.86 nm blueshift phenomenon and the light output power had a 70 % enhancement compared to a standard LED structure at 20 mA operating current. The wavelength blueshift of the EL spectra, with an increasing injection current, in the Holes-oxide LED (21.1nm) was smaller than that in the ST-LED (25.0nm). The lower piezoelectric field in an InGaN active layer and high light extraction efficiency are obtained in the LED structure embedded with a nanoporous structure. In the second part, the InGaN LED structure was re-grown on the PEC oxidized patterned-rods structure. In the Rods-Oxide LED structure, the light output power had an approximate 3.2 times enhancement when compared to a conventional LED at 20 mA. The wavelength blueshift of the photoluminescence spectra, when varying the reverse-bias voltage from 0 to -8 V, was measured as 3.08 nm and 2.53 nm for the Rods-ST LED and the Rods-Oxide LED, respectively. In the Rods-oxide LED structure, the lower piezoelectric field and the slightly higher internal quantum efficiency in the InGaN active layers were both measured through a bias-dependent and temperature-dependent photoluminescence measurement. Higher light extraction efficiency and small efficiency droop and lower piezoelectric field in the InGaN wells were observed in the Holes-oxide LED and Rods-oxide LED by inserting the PEC-treated nanoporous structure.
URI: http://hdl.handle.net/11455/10070
其他識別: U0005-0206201221272100
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