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標題: 不同製程參數對以電漿輔助化學氣相沉積法製備氟化非晶質碳膜性質之影響
Effects of process parameters on the properties of fluorinated amorphous carbon films prepared by plasma enhanced chemical vapor deposition
作者: Chiou, Sheng-Che
關鍵字: Plasma enhanced chemical vapor deposition
Fluorinated amorphous carbon
出版社: 材料科學與工程學系所
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摘要: 本文主要是以電漿輔助化學氣相沉積法製備氟化非晶質碳膜(a-C:F),並探討a-C:F碳膜性質之影響。以六氟乙烷(C2F6)、乙炔(C2H2)以及氬氣(Ar)做為前驅氣體。工作壓力、基板溫度以及射頻功率分別設定為33.3 Pa、293 K(20℃)以及100 W。此外,將C2H2以及(C2F6+Ar)之流量分別固定為10 sccm與10 sccm, 而C2F6/(C2F6+Ar)比例分別為0、20、40、60、80與100 %。實驗結果顯示,當C2F6/(C2F6+Ar)比例由0 %增加至100 %時,沉積速率會由111 nm/min增加至215 nm/min。當C2F6/(C2F6+Ar)比例由0 %增加至20 %時,C-C以及C-Hx鍵結會轉變為C-F鍵結。然而,當C2F6/(C2F6+Ar)比例由20 %增加至100 %時,C-F鍵結會轉變為C-F2以及C-F3鍵結。當C2F6/(C2F6+Ar)比例由0 %增加至100%時,光學能隙值會從0.84 eV上升至2.39 eV,水接觸角度會由61°增加至90°,不過表面能會從45.0 mN/m下降至20.6 mN/m。結果指出當C2F6加入至C2H2中,a-C:F薄膜會轉變為類高分子結構且變得更加具有疏水性。 當C2F6/(C2F6+Ar)比例為100 %時,射頻功率從50 W增加至150 W時,碳膜的沉積速率從159 nm/min增加至230 nm/min;碳膜結構中的C-Fx鍵結會增加,而光學能隙值會從2.25 eV上升至2.56 eV。此外,當射頻功率從150 W增加至250 W時,碳膜的沉積速率從230 nm/min減少至90 nm/min;碳膜結構中的C-Fx鍵結會減少而F2C=C鍵結會增加。光學能隙值從2.56 eV下降至2.00 eV,碳膜結構會趨向類石墨化結構。當C2F6/(C2F6+Ar)比例為100 %時,工作壓力從33.3 Pa增加至66.7 Pa時,電漿中的氣體自由平均路徑變小,導致結構較為無序化。而在工作壓力為66.7 Pa時,碳膜具有一最大水接觸角度102.3°,這個結果指出碳膜會趨向於疏水性質。
The properties of fluorinated amorphous carbon (a-C:F) films prepared by plasma enhanced chemical vapor deposition (PECVD) method are investigated. Hexafluorethane (C2F6), acetylene (C2H2), and argon (Ar) were used as the precursor gases. The mass flow rate of C2H2 and (C2F6+Ar) are fixed at 10 and 10 sccm, respectively. Additionally, the working pressure, substrate temperature, and radio-frequency power were 33.3 Pa, 293 K, and 100 W, respectively. Six kinds of (a-C:F) films were prepared with the C2F6/(C2F6+Ar) ratio of 0, 20, 40, 60, 80, and 100 %. Experimental results show that the deposition rate of a-C:F films increases from 111 to 215 nm/min as the C2F6/(C2F6+Ar) ratio increases from 0 to 100 %. When the C2F6/(C2F6+Ar) ratio increases from 0 to 20 %, the C-C and C-Hx bonds are mainly changed to the C-F bonds. Nevertheless, when the C2F6/(C2F6+Ar) ratio increases from 20 to 100 %, the C-F bonds are changed to the C-F2 and C-F3 bonds. When the C2F6/(C2F6+Ar) ratio increases from 0 to 100 %, the optical band gap increases from 0.84 to 2.39 eV and the water contact angle increases from 61 to 90 degrees, but the surface free energy reduces from 45.0 to 20.6 mN/m. This result indicates that as C2F6 is added in C2H2, a-C:F films are shifting to polymer-like and become hydrophobic. As the C2F6/(C2F6+Ar) ratio is 100 %, the radio-frequency power increases from 50 to 150 W, the deposition rate of carbon films increases from 159 to 230 nm/min; the C-Fx bonds in the carbon films increase, and the energy band gap increases from 2.25 to 2.56 eV. Alternatively, as the radio-frequency power increases from 150 to 250 W, the deposition rate of carbon films decreases from 230 to 90 nm/min; the C-Fx bonds in the carbon films decrease, while the F2C=C bonds increase. The e energy band gap decreases from 2.56 to 2.00 eV, and the carbon films structure shifts to graphite-like. As the C2F6/(C2F6+Ar) ratio is 100 %, the working pressure increases from 33.3 to 66.7 Pa, the free path of plasmas gas decreases, and thus, the ordered degree of carbon films structure decreases. When the working pressure is 66.7 Pa, the carbon film has a maximum water contact angle of 102.3 degree, and thus the carbon film become hydrophobic.
其他識別: U0005-2606201120213100
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