Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10403
標題: Fabrication of the InGaN micro-square array Light-Emitting Diodes by filling with Ga2O3 buried layer
利用光輔助電化學氧化技術製備微米方形陣列氮化鎵發光元件
作者: 林春敏
Lin, Chun-Min
關鍵字: PEC
光輔助電化學
GaN
Ga2O3
氮化鎵
氧化鎵
出版社: 材料科學與工程學系所
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摘要: In this thesis, we demonstrated that the GaN-based multi-quantum-well (MQW) micro-square arrays light emitting diodes were filled with the Ga2O3 buried layer for the isolation of individual micro-square array. The Ga2O3 layers were formed at the GaN:Si n-type mesa sidewall and the bottom ICP etching surface in LED structure, and the selective wet oxidation was occured through the photoelectrochemical wet oxidation process in H2O solution without p-type GaN:Mg layer. The oxide layer could provide passivation at mesa sidewall to reduce the surface leakage current. The dimension of square widths were 25µm and 15µm defined by the inductively coupled plasma etching and the PEC wet mesa etching processes. The conventional broad-area LEDs are fabricated close to the micro-square array LEDs on the same wafer. The micro-square array LEDs were filled with self-assemble Ga2O3 isolation layer through the photoelectrochemical wet oxidation process in H2O solution, and the Al (350nm) metal layer was deposited as a metal reflection and conductive layer. At 20 mA DC operating current, the 25µm and 15µm micro-square array LEDs have blue-shifted phenomenon about 1 nm(6.23meV) and 2.5nm(15.43meV), and the EL itensity were about 1.41 times and 1.22 times enhancement compared to the conventional BA LED. The reverse leakage currents measured at -10V of 25µm micro-square array LEDs (5.8510-10A) and 15µm micro-square array LEDs (1.3710-10A) had been suppressed lower than the conventional BA LED (1.7910-9A).
在本論文中,我們以實驗驗證微米方形陣列氮化銦鎵/氮化鎵多重量子井結構發光二極體可利用氧化鎵層將每個獨立分離的微米方形陣列氮化鎵發光二極體絕緣,透過在水溶液中的光輔助電化學氧化(photoelectrochemical,PEC)製程在氮化鎵平台側壁及蝕刻n型氮化鎵表面形成氧化鎵層,並觀察到選擇性氧化機制發生在p和n型氮化鎵界面,p型氮化鎵表面並不氧化,氧化鎵層能夠保護平台側壁而減少漏電流。透過乾式電漿蝕刻加上光輔助電化學濕式平台蝕刻兩階段製程,製作出直徑為25µm和15µm的微米方形陣列發光二極體,而傳統的大面積氮化鎵發光二極體就在微米方形陣列氮化銦鎵發光二極體附近,因此這些元件有相似的特性。 在20mA電流下,25µm和15µm的微米方形陣列發光二極體分別較傳統大面積發光二極體藍移大約1nm(6.23meV)和2.5nm(15.43meV),且光取出強度分別增加1.41倍和1.22倍。在反向-10伏特偏壓下量測漏電流,25µm的微米方形陣列發光二極體(5.85×10-10A)和15µm的微米方形陣列發光二極體(1.37×10-10A)皆較傳統大面積發光二極體(1.79×10-9A)漏電低。 由本篇論文結論可知,利用光輔助電化學氧化製程形成自身氧化Ga2O3氧化層和微米方形陣列發二極體結構有效改善光取出效率和光強度,且因利用厚金屬(Al 350nm)作為跨接導電層(transparent conductive layer)適合應用在高效率氮化鎵發光二極體覆晶式(flip-chip)元件。
URI: http://hdl.handle.net/11455/10403
其他識別: U0005-0308200710225400
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0308200710225400
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