Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10409
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dc.contributor黃詩詠zh_TW
dc.contributorS. Y. Huangen_US
dc.contributor黃俊杰zh_TW
dc.contributorJ. J. Huangen_US
dc.contributor.advisorD. S. Wuuen_US
dc.contributor.advisor武東星zh_TW
dc.contributor.author陳健煌zh_TW
dc.contributor.authorC.H.Chenen_US
dc.contributor.other中興大學zh_TW
dc.date2013zh_TW
dc.date.accessioned2014-06-06T06:45:02Z-
dc.date.available2014-06-06T06:45:02Z-
dc.identifierU0005-2901201221462300zh_TW
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dc.identifier.urihttp://hdl.handle.net/11455/10409-
dc.description.abstractWith the progress of semiconductor fabrication processes, the device size is getting smaller and circuit layout becomes more complicated. Nevertheless, the current channel of MOSFET is shortened with the shrinking of device size, which will lead to the problem of so-called short channel effect (SCE). In order to suppress the SCE, the ultra-shallow junction (USJ) structure of semiconductor device is introduced and the low energy ion implantation is an important factor in this technique. In this study, the ion implanter was applied to fabricate USJ using Boron ion in n-type (100) Si substrate. The implantation doseage and annealing temperature are 6×1015 ions/cm2 and 950 C, respectively. The drift, process chamber decel and double decel modes of ion implanter controlled conditions were optimized for USJ fabrication. The different decel ratios (1.5 %, 2 % and 3 %) and implant energies (2.5 keV, 3 keV and 3.5 keV) were used to investigate the implant concentration, thermal wave and sheet resistance. The uniformity of sheet resistance is 0.87 % with the decel ration of 1.57 %. The thermal wave unit is 1350 TWU with 3.5 keV implant energy. Finally, the measurement of secondary ion mass spectroscopy was adopted to confirm the implant depth.en_US
dc.description.abstract隨著半導體製程技術的演進,積體電路的電路佈局也愈來愈複雜,元件尺寸也越來越小;當閘極長度也因此變短時,元件電流通道也會跟著被縮短,但是通道的尺寸是不可能無限制地縮小下去的,否則隨之而來的短通道效應(short channel effect, SCE)問題將更嚴重。為了改善短通道效應的現象,超淺型接面(ultra-shallow junction, USJ)之低能量佈植技術將變得相當重要。 本論文以離子植入機作為實驗設備,植入氣體為硼離子,佈植於n 型的(001)矽基材上,離子植入劑量為6.00×1015 ions/cm2,植入後使用回火溫度為950℃持溫10 秒;使用三種離子植入機台的製程條件控制模式,分別為能量模式漂移(drift)模式、製程腔體減速(process chamber decel, PCD)模式及雙重減速(double decel, DD)模式;並使用不同減速定量值(1.5 %, 2 %, 3 %),以及不同能量差異(2.5 keV, 3 keV, 3.5 keV),觀察植入後基板的片電阻、熱波形、離子植入濃度以及均勻度等特性;當減速定量值為1.57 %時,片電阻均勻度為0.87 %;離子能量為3.5 keV時,熱波形量測結果為1350 TWU;最後使用二次離子質譜儀(secondary ion mass spectroscopy, SIMS)驗證離子植入之深度。zh_TW
dc.description.tableofcontents致謝 i 摘要 ii 英文摘要 iii 目錄 iv 圖目錄 vii 表目錄 x 第一章 前言 1 1.1 研究背景 1 1.2 研究動機 2 1.3 論文結構 2 第二章 文獻回顧 3 2.1 元件尺寸微縮所造成的影響 3 2.2 影響離子植入深度的因素 4 2.2.1 投影離子射程 5 2.2.2 通道效應 6 2.3 低能量離子佈植的發展演進 8 2.4 相關文獻比較 10 第三章 實驗方法與設備之介紹 13 3.1 實驗試片和步驟流程 13 3.1.1 能量產生模式流程圖 13 3.1.2 減速定量值流程圖 14 3.1.3 能量差流程圖 15 3.2 離子佈植系統 16 3.3 離子源生產機制 17 3.4 萃取電極 19 3.5 質量分析器 21 3.6 電子中和系統 25 3.7 離子電流量測系統 26 3.8 真空系統 27 3.9 四點探針量測系統 31 3.10 二次離子質譜儀 31 3.11 能量產生模式 34 3.12 熱波形系統量測原理 36 第四章 結果與討論 39 4.1 能量產生模式差異對於片電阻之影響 39 4.2 減速定量值對於片電阻之影響 42 4.3 能量差異對於片電阻變化之比較結果 46 4.4 能量差異對於熱波形變化之比較結果 49 4.5 能量差異對於SIMS 緃深分佈之比較 51 第五章 結論 54 參考文獻 56zh_TW
dc.language.isoen_USzh_TW
dc.publisher材料科學與工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2901201221462300en_US
dc.subjectIon implantionen_US
dc.subject離子佈植zh_TW
dc.subjectSecondary Ion Mass Spectroscopyen_US
dc.subjectResistance Sheeten_US
dc.subject二次離子質譜術zh_TW
dc.subject片電阻zh_TW
dc.titleA Study of Sheet Resistance Uniformity in Ion-Implanted 12 inch Si Shallow Junctionen_US
dc.title離子佈植於十二吋矽晶圓淺接面片電阻均勻度之研究zh_TW
dc.typeThesis and Dissertationzh_TW
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