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|標題:||Fabrication of Nickel Silicide Nanowires by AFM Lithography and Reactive Deposition Epitaxy Processes on SOI Substrates|
|關鍵字:||Atomic Force Microscopy|
Reactive Deposition Epitaxy
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|摘要:||As the dimension of microelectronic devices shrink into nanometer, improving the quality of the interconnections between electrodes and devices is an important object in the semiconductor industry. Low-resistance metal silicides have excellent electric properties and low contact resistance of the contact between metal and silicon when their size reduces to nanometer scale. Nickel monosilicide is a promising material for applying in the nanoelectronic devices because it has low Si consumption and no size-dependence effects. Scanning probe lithography process is a simpler method than others because it can work in air and is easy to manipulate the position of devices. Using the reactive deposition epitaxy (RDE) method can promote epitaxial growth of metal silicide on silicon.
Thus, in this study, Si nanowires were fabricated on SOI substrates by AFM field-induced local oxidation lithography and selective wet etching. The Si nanowires transformed into nickel silicide nanowires further by RDE. Furthermore, the effects of the amount of nickel that participated in the formation of silicide and the deposition temperature on the structural and electrical properties of nanowires were studied.
The experimental results show that the initial phase was NiSi2, and then transformed to Ni2Si phase further when the deposition rate was 0.005 Å/s and the deposition temperatures were 500 and 700°C. The nanowires had smooth surface when the epitaxial NiSi2 was formed in the initial stage at 500°C. After the formation of a NiSi2 nanowire, the protrudent Ni2Si particles were formed at several regions of NiSi2 nanowire. However, for the reaction at 700°C, protrudent Ni2Si particles had already been formed on the nanowire before the formation of a whole NiSi2 nanowire. In addition, the mean spacing of nucleation for the reaction at 500°C was less than that for the reaction at 700°C.
The resistivity of nickel silicide nanowire that was formed at 700 °C for the Ni/Si atomic radio of 1 was 86 μΩ-cm. When the nickel silicide nanowires were formed at 500°C for the Ni/Si atomic radio of 2/3 and 1 their resistivities were 63.3 and 36.7 μΩ-cm, respectively. The failure current density of nickel silicide nanowires that were formed in this study was in the range of 5.4~8.8×10-7 A/cm2.|
奈米製程尺寸日益縮小，半導體元件中接觸電極和元件間連線品質更顯重要。低電阻金屬矽化物在奈米尺度下仍保有優異電性，而且可降低金屬與矽的接觸電阻，其中鎳矽化物矽消耗量低，而且沒有小線寬效應，在奈米電子元件中具有高度的應用潛力。利用掃描探針微影術製作奈米元件不需在超高真空環境，以簡單步驟就能進行，而且能精確控制奈米圖樣的位置，可應用在微電子元件中。而反應式磊晶成長法在高溫下沉積金屬，金屬原子能移動至穩定位置沉積，容易與基材磊晶成長金屬矽化物。 因此本實驗使用原子力顯微鏡場致氧化搭配適當濕式蝕刻製備矽奈米線，接著再利用反應式磊晶法(Reactive Deposition Epitaxy，RDE)成長方式生成鎳矽化物，探討鎳蒸鍍量和反應溫度對生成相和電性的影響。研究結果顯示以0.005 Å/s的低鍍率，不論在500℃和700℃反應，都是磊晶NiSi2相率先成長，鎳持續提供，會接著相轉變為多晶Ni2Si相造成奈米線外觀的突起。不同的是500 ℃，蒸鍍鎳量少(Ni/Si原子比為1/3和1/6)時，生成NiSi2磊晶區段表面平坦，待奈米線完全反應成NiSi2後，Ni2Si才由多鎳處接著相轉變，但700 ℃則在Ni/Si原子比為1/6時，就已有Ni2Si(高突顆粒)成長在NiSi2上，造成外觀突起。而且500℃成核的平均距離較700 ℃小。 於700 ℃，多鎳(Ni/Si原子比=1)時，電阻率為86 μΩ-cm，最大電流密度為8.8×10-7 A/cm2；而500 ℃，Ni/Si原子比為2/3電阻率為63.3 μΩ-cm，最大電流密度為5.4×10-7 A/cm2 ，而Ni/Si原子比為1時，低電阻Ni2Si相較多，有較低電阻率36.7 μΩ-cm，其電流密度大於5.9×10-7 A/cm2。
|Appears in Collections:||材料科學與工程學系|
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