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標題: 氧化亞銅與氧化亞銅/銀/氧化亞銅薄膜之光電性質
Optical and electrical properties of Cu2O and Cu2O/Ag/Cu2O thin films
作者: 郭姵妏
Kuo, Pei-Wen
關鍵字: Cu2O/Ag/Cu2O films
plasmon resonance
出版社: 材料科學與工程學系所
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摘要: 以直流磁控濺鍍在玻璃基板上分別沉積氧化亞銅(Cu2O)及氧化亞銅/銀/氧化亞銅(Cu2O/Ag/Cu2O;CAC)多層薄膜。控制銀在CAC薄膜間的厚度,分別為3、5、10nm。沉積完成後的一些試片,利用快速退火系統(RTA)製備出CAC-DA及CAC-AD兩種製程之試片。並利用Ag/Cu2O(AC)薄膜來研究銀在氬氣氣氛下經過熱處理後的團聚效應。以X光繞射儀及場發射電子顯微鏡證明銀能形成奈米顆粒存在於薄膜界面中。利用紫外光-可見光-遠紅外光光譜儀、霍爾量測系統、I-V量測系統分析所有試片的電性、光學性質及光電性質。 從實驗結果顯示2維的銀薄膜經過退火處理後由於銀具有高的表面張力能轉換成許多獨立的奈米顆粒。CAC薄膜,在可見光範圍的穿透率及電阻率隨著銀薄膜的厚度增加而降低。CAC-DA隨著退火溫度的增高,吸收率及光誘導電流產生率降低,可能是銀顆粒隨著退火溫度升高而變大的趨勢所造成。CAC-DA及CAC-AD皆可以有效的提升Cu2O薄膜在紅光及紅外光範圍的吸收。然而,CAC-AD薄膜所增加的吸收無法有效的轉為光電流的產生,有可能是因為銀顆粒的尺寸過大形成了原子晶格振動吸收而產生聲子輸出。
Cu2O and two types of Cu2O-Ag-Cu2O (CAC) multilayered thin films were deposited on glass substrates using DC-magnetron sputtering. For CAC films, the mass thickness of Ag layer was controlled at 3, 5, 10nm. After deposition, some of these films were annealed using a rapid thermal annealing (RTA) system at 450oC~ 650 oC, in order to create embedded Ag particles. AC films were used to study the clustering effect of Ag in Ar atmosphere, as well as for forming the 2nd type of CAC(CAC-DA and CAC-AD) film by covering another Cu2O layer on the annealed AC structure. A XRD (X-ray Diffraction) and FE-SEM (Field-Emission Scanning Electron Mircoscopy) were applied to examine the Ag nano-particles on the interface of these films. A UV-VIS-NIR photometer, a Hall measurement system, and a I-V measurement system were used to characterize the optical and electrical properties of these films with and without RTA. The results show that 2-dimensional Ag layer can transform into many individual particles due to its high surface tension at annealing temperature, no matter when the annealing was carried out. For CAC films, without annealing, the optical transmission and the resistivity are decreased with the inserted Ag-layer. After annealing, both the transmission and resistivity are increased, possibly due to the clustering effect of Ag layer. Most importantly, it is found that the embedded Ag particles can increase the light absorption in the NIR-IR region, which can increase photo-induce current.
其他識別: U0005-2408201016093300
Appears in Collections:材料科學與工程學系



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