Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10597
標題: 傳統結構與背面接觸結構之單晶矽太陽電池開發與特性探討
Fabrication and Characterization of Conventional and Back-Contact Structures for Monocrystalline Silicon Solar Cells
作者: 黃冠傑
Huang, Kuan-Chieh
關鍵字: monocrystalline solar cell
單晶矽太陽能電池
conventional structure
back-contact structure
TCAD simulator
傳統結構
背面接觸結構
TCAD模擬
出版社: 材料科學與工程學系所
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摘要: 太陽能電池由於製作成本昂貴,一直無法與傳統火力發電做競爭,在本研究裡我們以低成本的旋轉塗佈擴散方式製作太陽能電池,取代一般常見的氣體擴散,並搭配模擬軟體TCAD加快開發過程。 在實驗裡,我們先以模擬軟體了解實驗變因對趨勢的變化,而模擬結果我們了解基板厚度與射極擴散深度對效率所產生的影響。而在實際製作上,我們搭配模擬結果,成功開發出轉換效率15.77 (%),開路電壓0.56 (V)、短路電流38.12 (mA/cm2)、填充因子73.12 (%)的傳統太陽能電池結構。 接著以此擴散方法,我們進行低成本的背面接觸結構製程開發,在模擬軟體裡我們初步了解此結構的趨勢:在基板條件設定,我們模擬基板載子生命週期長短與基板厚度的影響;在擴散條件設定,我們模擬射極與背面電場擴散深度的影響;在結構寬度設定,我們模擬射極、背面電場與間距的結構寬度變化,而模擬所得到的最佳轉換效率為24.06 (%),開路電壓0.59 (V)、短路電流48.92 (mA/cm2)、填充因子83.33 (%)。而在實際製作上,搭配模擬結果,我們也掌握影響背面接觸太陽能電池結構效率的因素。 在本研究裡,我們首先證實旋轉塗佈法應用在太陽能電池上的可行性,並以此方法進行低成本的背面接觸結構製程開發,在實驗過程裡,搭配模擬結果,我們對擴散條件、結構寬度設計與晶片品質進行優化,最後也得到初步的背面接觸太陽能電池製程,本研究成功以低成本的擴散方式達到開發下一世代太陽能電池的目標。
As the high cost of production, solar cell generation can’t complete with thermoelectricity power generation. In our research, we discuss the low-cost production of solar cell with spin-on dopant diffusion to replace the phosphorus (POCl3) diffusion along with the use of TCAD software to shorten the cycle of development time. In the experiment process, in the beginning we use the software to simulate the efficiency trend and understand the effect of base thickness and Emitter diffusion length. In the experiment progress, with the result of simulation a best result of conventional structure solar cell is achieved while efficiency = 15.77 (%)、Voc = 0.56 (V)、Jsc = 38.12 (mA/cm2)、FF = 73.12 (%). By using the method, we also develop the low-cost production of back-contact structure. In the simulation of base condition, we simulated the effect of carrier lifetime and base thickness;in diffusion condition, we simulated the effect of Emitter and BSF diffusion length;in structure design, we simulate the width effect of Emitter, BSF and Space. The best efficiency in our simulation is 24.06 (%), while Voc = 0.59 (V)、Jsc = 48.92 (mA/cm2)、FF = 83.33 (%). As to the experiment, we know the key points in the fabrication of back-contact solar cell with the simulation result. In the research, we confirm the possibility of the spin-on dopant diffusion method in the application of solar cell and use the method to develop the back-contact structure process. We optimize the design of diffusion condition, structure width and carrier lifetime and develop a novel technique to fabricate the back-contact solar cell by using the low-cost diffusion method. Finally we confirm the possibility by the low-cost diffusion method to fabricate the next generation of back-contact solar cell.
URI: http://hdl.handle.net/11455/10597
Appears in Collections:材料科學與工程學系

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