Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/10884
標題: 鎳鐵/氧化鉻雙層膜及[鉑/鈷]4/氧化鉻多層膜之交換偏壓特性研究
Exchange-bias effects in NiFe/Cr-oxide bilayers and [Pt/Co]4/Cr2O3 multilayers
作者: 郭仲儀
郭仲儀, Jung-Yi Guo
關鍵字: exchange bias
交換偏壓
ion-beam deposition technique
雙離子束濺鍍技術
出版社: 材料科學與工程學系所
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摘要: 本論文利用雙離子束濺鍍系統製備鎳鐵/氧化鉻雙層膜與[鉑/鈷]4/氧化鉻多層膜,藉由改變(i)反鐵磁層氧含量,(ii)鐵磁厚度,(iii)反鐵層厚度,與(iv)基板及熱處理參數等變因研究其水平與垂直交換偏壓特性。電子顯微鏡分析結果顯示:不同結構之鉻氧化物(Cr, Cr2O3, Cr3O4)與製程之氧含量有關。 鎳鐵(~ 10 nm)/氧化鉻(~ 20 nm)雙層膜之低溫(T= 5K)磁性質顯示:(i)交換偏壓值(於氧含量大於15% 後)隨氧含量增加而降低,(ii)其交換偏壓場隨鎳鐵厚度增加而降低,且(iii)隨反鐵磁層厚度增加而增加,甚且(iv)氧化鉻鍍在單晶基板(Al2O3(0001))並經熱處理後可得到垂直交換偏壓場(Hex⊥~ -80 Oe)。 [鉑(1 nm)/鈷(x nm)]4/氧化鉻(5 nm)多層膜之交換偏壓效應研究顯示: [鉑(1 nm)/鈷(x nm)]4/氧化鉻(5 nm)多層膜之垂直垂直異向性與鈷厚度有關。低溫(T= 5K)磁性質研究顯示:[鉑(1 nm)/鈷(x nm)]4/氧化鉻(5 nm)多層膜之交換偏壓場會隨鈷厚度降低而由負值轉變為正值之垂直交換偏壓場(Hex⊥~ +50 Oe)。 本論文亦利用光電子激發顯微鏡(PEEM)與LLG微磁模擬軟體研究鎳鐵/氧化鉻雙層膜之磁區結構;異向性質由鐵磁共振(FMR)量測,而磁電傳輸性質則由磁電阻量測(MR)等輔助及印證。
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