Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/11003
DC FieldValueLanguage
dc.contributor蔡松雨zh_TW
dc.contributor賴志輝zh_TW
dc.contributor許薰丰zh_TW
dc.contributor.advisor何永鈞zh_TW
dc.contributor.author吳俊霖zh_TW
dc.contributor.authorWu, Jyun-Linen_US
dc.contributor.other中興大學zh_TW
dc.date2007zh_TW
dc.date.accessioned2014-06-06T06:46:46Z-
dc.date.available2014-06-06T06:46:46Z-
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dc.identifier.urihttp://hdl.handle.net/11455/11003-
dc.description.abstract藍光可寫一次光碟若以有機材料作為記錄層會有受光照射容易變質,熱傳導度不佳,儲存容量提升的空間小,環境汙染等問題,因此,將無機材料應用於藍光可寫一次光碟記錄層是一具有潛力的發展方向。在無機材料中,矽具有不錯的藍光光學性質,但單層矽的結晶溫度過高,因此考慮使用a-Si/Ni雙層薄膜,以鎳金屬誘發矽結晶的方式作為紀錄層。鎳在非晶矽與結晶矽中均屬於快速擴散源,且NiSi2與Si的晶格不匹配僅有0.4%,有助於減少晶格缺陷、降低結晶溫度、改善結晶性質,因此在實驗中將製備a-Si/Ni雙層薄膜,探討其在藍光可寫一次光碟記錄層的應用。 本研究以離子束輔助沉積系統製備a-Si(20nm)/Ni(1nm)雙層記錄薄膜並與過去本實驗室研究的a-Si(20nm)/Ni(5nm)薄膜進行比較。由熱光分析結果可知,a-Si(20nm)/Ni(1nm)雙層記錄膜在熱處理過程中與a-Si(20nm)/Ni(5nm)記錄膜最大差異在於具有兩段式相變化,且300℃~350℃的第二段相變化的紅光反射功率持續上升。a-Si(20nm)/Ni(1nm)薄膜形成鎳矽化合物結晶的第一階段活化能約為2.22eV,略高於a-Si(20nm)/Ni(5nm)薄膜的活化能1.98eV。a-Si(20nm) /Ni(1nm)雙層記錄膜產生結晶矽所需要的活化能為2.19eV,遠低於單層a-Si的活化能4eV。由XRD、TEM得知,Si(20nm)/Ni(1nm)薄膜反射率的第一段變化是由於NiSi2的形成,第二段變化則是來自於大量的結晶矽產生。經計算得知a-Si(20nm)/Ni(1nm)與a-Si(20nm)/Ni(5nm)兩組薄膜在形成NiSi2後殘餘的矽含量分為82at%、8.5at%,符合相變化分析的結果。光學性質分析顯示, a-Si(20nm)/Ni(1nm)和a-Si(20nm)/Ni(5nm)在初濺鍍狀態對藍光波長均具有足夠的吸收率(52.9%、54.2%)與反射率(26.8%、38.2%)﹔熱處理後吸收率均下降(37.0%、42%),反射率皆有上升的趨勢(44.9、58.2%),在熱處理產生結晶相後與初濺鍍薄膜相較具有足夠的光學對比(25.2%、21.6%),因此,兩組薄膜在光學性質皆符合藍光可寫一次光碟記錄薄膜的需求。在靜態測試部份發現,a-Si (20nm)/Ni(1nm)薄膜在藍光雷射退火後亦具有兩段式的相變化,在以3mW,350ns;6mW,200ns等參數的藍光雷射照射後均可留下有效記錄形跡。動態測試結果顯示a-Si(20nm)/Ni (1nm)的膜層結構在7.5mW寫入時CNR值接近45dB,優於a-Si(20nm)/Ni (5nm)結構的37dB,符合光儲存媒體的需求。zh_TW
dc.description.abstractWhen the organic materials are used to be the recording layer for the write-once blue ray disk, there will be some drawbacks, such as easy deterioration under light exposure, inferior thermal conductivity, small promotion of storage capacity, and environmental pollution. Therefore, the inorganic materials have been considered as potential candidates for use in the write-once blue ray disk. Among these inorganic materials, silicon exhibiting excellent optical properties at blue ray wavelength is one of the promising materials for blue ray recording. However, the crystallization temperature of a-Si was too high. As a result, the a-Si/Ni bilayer recording film was adopted, where a-Si can be crystallized at a lower temperature induced by a thin Ni layer. It is known that Ni is a fast diffuser in both amorphous silicon and crystalline silicon, and the lattice mismatch between NiSi2 and silicon was 0.4%, so that the lattice defects and crystalline temperature of a-Si can be reduced, and the crystalline properties can be improved. In this study, we prepared a-Si(20nm)/Ni(1nm) bilayer recording film by an ion beam assisted deposition system and compared the crystallization behaviors and optical properties of a-Si(20nm)/Ni(1nm) with those of a-Si(20nm)/Ni(5nm). From the results of thermal analysis, the a-Si(20nm)/Ni(1nm) bilayer recording film exhibited a two-step phase transformation, while the a-Si(20nm)/Ni(5nm) bilayer recording film showed only one-step phase transformation. The results of XRD and TEM confirmed that the first phase transformation was attributed to the formation of NiSi2, and the second phase transformation was caused by the crystallization of the remaining amorphous silicon. The remaining amorphous Silicon in a-Si(20nm)/Ni(1nm) and a-Si(20nm)/Ni(5nm) film after the formation of NiSi2 were calculated to be about 82at% and 8.5at%, respectively, explaining the differences in the phase transformation behaviors. The activation energy for the formation of nickel-silicides was about 2.22eV for a-Si(20nm)/Ni(1nm) film, which was higher than that of 1.98 eV for a-Si(20nm)/Ni(5nm) film. Meanwhile, the activation energy for the crystallization of a-Si in a-Si(20nm)/Ni(1nm) film was about 2.19 eV, which was much lower than that of 4eV for the single layered amorphous Silicon. The optical properties revealed that both a-Si(20nm)/Ni(1nm) and a-Si(20nm)/Ni(5nm) bilayer recording films exhibited sufficient high absorptance, reflectivity, optical contrast at blue ray wavelength, and fulfilled the requirements for the write-once blue ray disk. Under blue laser annealing, the a-Si(20nm)/Ni(1nm) bilayer recording film was also found to exhibit a two-step phase transformation. The recording marks were clearly formed after irradiation by blue laser pulses with various powers for different durations. The results of dynamic tests showed that the CNR of 45dB could be achieved by a lue ray disk with an a-Si(20nm)/Ni(1nm) bilayer recording film at writing power of 7.5mW, which was better than that of 37dB obtained by a blue ray disk with an a-Si(20nm)/Ni(5nm) structure.en_US
dc.description.tableofcontents中文摘要..................................................I 英文摘要.................................................II 目錄.....................................................IV 圖目錄..................................................VII 表目錄...................................................XI 第一章、前言..............................................1 1.1 研究動機..........................................1 1.2 研究目的..........................................2 第二章、理論基礎與文獻回顧...............................3 2.1 光儲存媒體的發展..................................3 2.2 藍光光碟..........................................5 2.3 藍光可寫一次光碟.................................10 2.4 金屬誘發非晶矽結晶...............................12 第三章、實驗方法與步驟...................................17 3.1 實驗概要與流程...................................17 3.2 基板清洗.........................................19 3.3 薄膜濺鍍.........................................19 3.4 濺鍍速率量測.....................................20 3.5 退火處理.........................................20 3.6 薄膜性質分析.....................................20 3.6.1 熱性質分析................................20 3.6.2 晶體結構分析..............................21 3.6.3 顯微組織觀察..............................22 3.6.4 光學性質分析..............................23 3.6.5 靜態測試..................................23 3.6.6 動態測試..................................23 第四章、實驗結果與討論...................................25 4.1 熱性質分析......................................25 4.2 晶體結構分析....................................30 4.2.1 X光繞射晶體結構分析.......................30 4.2.2 TEM 結構分析..............................31 4.2.3 a-Si/Ni雙層記錄膜的相變化機制.............33 4.3 薄膜光學性質分析................................34 4.3.1 a-Si/Ni雙層記錄薄膜之吸收率光譜..........34 4.3.2 a-Si/Ni雙層薄膜之反射率分析..............34 4.3.3 a-Si/Ni雙層薄膜之穿透率分析...............35 4.4 a-Si/Ni薄膜經雷射照射後之相變化行為.............40 4.5 動態測試........................................46 第五章、結論.............................................48 參考文獻.................................................49zh_TW
dc.language.isoen_USzh_TW
dc.publisher材料工程學系所zh_TW
dc.subjectNickelen_US
dc.subjectzh_TW
dc.subjectSiliconen_US
dc.subjectblue ray disken_US
dc.subjectzh_TW
dc.subject藍光光碟zh_TW
dc.title不同厚度比之鎳/矽雙層記錄薄膜於藍光可寫一次光碟的應用zh_TW
dc.titleApplication of Ni/a-Si bilayer recording films with different thickness ratios for write-once blue ray disken_US
dc.typeThesis and Dissertationzh_TW
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