Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/11099
標題: 以反應性射頻磁控濺鍍法沉積氮氧化矽 氣體阻障層在PES基材上製備與分析
The Preparation and Characterization of the Silicon Oxynitride Gas Barrier Deposited on PES by RF Magnetron Reactive Sputtering
作者: 劉家倩
Liu, Chia-Chen
關鍵字: Silicon Oxynitride
氮氧化矽
出版社: 材料工程學系所
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摘要: 本實驗利用反應性射頻磁控濺鍍的技術以純矽靶為靶材通入氮氣產生反應來製備氮氧化矽薄膜,改變製程參數分別為射頻功率、氮/氬流量比率、基材偏壓。在未鍍膜的純PES基材,其水氣穿透率值為52 g/m2-day,實驗的分析數據中得到,在固定工作腔壓1.6 Pa,鍍膜時間30 min,在射頻功率250 W、氮氣流量100 %、基材偏壓0 V時可得到最低的水蒸氣穿透率值為0.5 g / m2-day。當固定工作腔壓1.6 Pa,鍍膜時間30 min,在射頻功率250 W、基材偏壓0 V、改變氣體流量方面:在氮氣流量95%時可得到最高的光穿透率接近90 %,而在氮氣流量95 %有最低的粗糙度0.8 nm。當固定工作腔壓1.6 Pa,鍍膜時間30 min、氮氣流量100 %、基材偏壓0V、改變射頻功率方面:在射頻功率210 W時可得到最高的光穿透率接近93 %,而在射頻功率200 W及230 W時有最低的粗糙度1 nm。
In this study the SiON thin film was deposited on PES by reactive RF magnetron sputtering with the pure Si as target in Ar/N2 atmosphere.The coating parameters involved RF power, N2/Ar gas flow ratio and substrate bias.The water vapor permeation rate of original PES substrate is 52 (g/m2- day). The results from the experiments show that under the fixed working chamber pressure of 1.6 Pa and 30 minutes depositing time, the lowest water vapor permeability of 0.5 (g/m2-day) was obtained at the conditions as 250 W sputtering power, N2 flow rate ratio 100 % and substrate bias 0 V. By precisely adjusting the N2 flow, the fixed working chamber pressure of 1.6 Pa and 30 minutes depositing time, the higest light transmittance of 90 % was obtained at 250 W sputtering power, N2 flow rate ratio 95 % and substrate bias 0 V. the fixed working chamber pressure of 1.6 Pa and 30 minutes depositing time, the lowest surface roughness of 0.8 nm was obtained at 250 W sputtering power, N2 flow rate ratio 50 % and substrate bias 0V. By precisely adjusting the RF power, the fixed working chamber pressure of 1.6 Pa and 30 minutes depositing time, the higest light transmittance of 93 % was obtained at 210 W sputtering power, N2 flow rate ratio 100 % and substrate bias 0V. the fixed working chamber pressure of 1.6 Pa and 30 minutes depositing time, the lowest surface roughness of 1.0 nm was obtained at 200 W and 230 W sputtering power, N2 flow rate ratio 100 % and substrate bias 0 V.
URI: http://hdl.handle.net/11455/11099
Appears in Collections:材料科學與工程學系

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