Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/11241
標題: 鈷/鉑多層膜之結構與磁性質之研究
The Structures and Magnetic Properties of Co/Pt Multilayers
作者: 林信儒
Lim, Shin-Ru
關鍵字: Co/Pt
鈷/鉑
multilayer
perpendicular
多層膜
垂直記錄
出版社: 材料工程學系所
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摘要: 本研究利用雙離子束濺鍍系統製備[Pt(X nm)/Co(Y nm)/]Z多層薄膜。XRD與TEM分析結果顯示:初鍍膜有Pt(a~3.91Å)與Co相以及L12 CoPt3(a= 3.83 Å)相的存在。由TEM結果得知Pt/Co多層膜之平均晶粒尺寸約為5~10 nm,且矯頑磁力均介於HC=42~85之間,應是hcp Co相與L12 CoPt3相所導致。 Co/Pt多層膜經550 ℃退火6分鐘後,Co/Pt多層膜產生f.c.c CoPt(a~3.70 Å)相,主要由於薄膜間互相擴散導致序化結構之形成。退火後樣品之平均晶粒尺寸介於10~40 nm。磁性分析顯示:[Pt(5nm)/Co(4nm)]2多層膜具有較大之矯頑磁力(Hc~800 Oe),主要由於產生CoPt相所致。而[Pt(1.3nm)/Co(0.5nm)]16多層膜經退火後,軟磁相L12 Co3Pt之生成將導致較小之矯頑磁力(Hc~30 Oe)。 [Pt(5nm)/Co(4nm)]2多層膜於300 ℃以下退火,其結構與初鍍膜相同。當退火溫度於550 ℃以上,fcc CoPt結構生成,且其矯頑磁力明顯增加(Hc~800 Oe),當退火溫度達到650℃以上時,矯頑磁力(Hc~6500 Oe)達到最大值。序化度分析顯示:[Pt(5nm)/Co(4nm)]2在退火溫度700℃時,具有最高序化度(S~0.96)。 [Pt (2.4nm)/Co( 2nm)]10/Pt(30nm)經離子轟擊效應的初鍍膜方面:由XRD研究結果顯示出有fcc Pt(a~3.70 Å)之繞射峰,並在較低之End-Hall voltage轟擊下,會有L12 CoPt3(a~3.8 Å)的伴峰。且Pt之晶格常數隨End-Hall voltage增加而降低,此顯示結構經離子束轟擊後較為緻密。磁滯曲線分析得知:矯頑磁力隨End-Hall voltage增加而降低。 [Pt (2.4nm)/Co( 2nm)]10/Pt(30nm)多層膜經700 ℃退火後,形成CoPt3(a~3.8 Å)。且CoPt3之晶格常數隨End-Hall voltage增加而降低。整體而言經退火處理之後矯頑磁力比初鍍膜小且隨End-Hall voltage增加而降低,顯示離子束轟擊效應會抑制序化相f.c.t CoPt之生成。
A series of Co/Pt multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt3 phases were developed with increasing End-Hall voltage (VEH) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing VEH. After annealing, the formation of CoPt3 was observed in these ion-beam bombarded samples, resulting in lower coercivities (Hc~ 50 Oe). The depressed transition temperature of CoPt3 for films deposited with the largest VEH was attributed to distorted CoPt3 structures that appeared with annealing.
URI: http://hdl.handle.net/11455/11241
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