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Deposition and characterization of Cu2O and Cu2O-Ag2O films
DC-reactive magnetron sputtering
incident photon to current efficiency
plasma oxidation process
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實驗中利用直流反應式濺鍍與電漿氧化處理，分別成功製備Cu2O薄膜和Cu2O-Ag2O薄膜於玻璃(或ITO玻璃)，運用X光繞射技術(X-ray diffractometer, XRD)、穿透式電子顯微鏡(Transmission electron microscopy, TEM)和場發射電子顯微鏡(Field-Emission Scanning Electron Microscopy, FE-SEM)來檢測薄膜微結構的變化，使用紫外光-可見光分光光譜儀(UV-Vis Spectrophotometer)與光致螢光光譜儀(Photoluminescence Spectrophotometer)分析薄膜的光學特性，運用光電轉換效率分析儀器(incident photon to current efficiency, IPCE)和光電化學量測系統(photoelectrochemistry measurement system, PEC)來測量薄膜的光電性質。
Cu2O is a P-type semiconductor with a direct band gap and it has a high optical transparency at wavelength above 500 nm and with a high absorption coefficient at the wavelength below. The oxide semiconductor is a non-toxic material, and having a low production cost. The theoretical photo-electrical conversion efficiency of 20% makes it possible to be used as an absorber layer in thin film solar cells. According to a recent report, Cu2O-based oxide heterojunction solar cells with higher than 6% conversion efficiency have been fabricated. This opens up a new interest in further optimizing the opto-electronic properties of Cu2O films. This study aims at a new approach to enhance optical absorption of Cu2O films in visible light range, and increase their photon-to-current efficiency. In the present attempt, the opto-electronic properties are expected to be improved by mixing cubic-Ag2O with Cu2O. The increase of photon-to-current efficiency can be achieved by band gap engineering. The band gaps of Cu2O and Cubic-Ag2O are 2.3 eV and 1.6 eV, respectively. When the heterojunction of Cu2O-Ag2O is formed, the optical absorption of visible light as well as the photon-to-current efficiency can be enhanced. This is because that the conduction band (CB) electrons can be injected from Cu2O to Ag2O. Oppositely, the valence band (VB) holes can be injected from Ag2O to Cu2O. In the experiment, Cu2O and Cu2O-Ag2O thin films were prepared by DC-reactive magnetron sputtering and a plasma oxidation process on glass substrates (or ITO glass). After deposition, the microstructure of the films was examined using X-ray diffractometry, transmission electron microscopy (TEM) and Field-Emission Scanning Electron Microscopy (FE-SEM). A UV-VIS-NIR photometer and a Photoluminescence measurement system were used to characterize the optical and electrical properties of these films. An incident photon-to-current efficiency (IPCE) system and a photoelectrochemistry measurement system (PEC) were used to characterize the opto-electrical properties of these films. The microstructure study using TEM revealed that Ag2O films were to decompose during a thermal treatment at temperatures higher than 250 oC. The Ag2O films hence have to be deposited at low temperature. The Cu2O-Ag2O-Ag nanocomposite consisted of Cu2O, Ag2O, and small amount of Ag phases. The results of Photoluminescence (PL) measurement confirmed that the Cu2O-Ag2O-Ag(4 at.%) sample might produce more electron-hole pairs than other samples, which caused the increase of photo-current. The coupling of Ag2O phase with Cu2O could enhance light absorption and created more electron-hole pairs due to the small band gap of Ag2O. The effects of Cu2O-Ag2O interface is verified on the enhanced photocurrent and quantum efficiency (IPCE). The Cu2O-Ag2O nanocomposite films can therefore be used as the active absorption layer in Cu2O-based solar cells. Finally, the results revealed that plasma oxidation could be used to prepare Cu2O films with fewer defects than those produced by reactive magnetron sputtering. In this part of study, it was also proved that Cu2O-Ag2O thin films with fewer defects can be prepared through plasma oxidation. By using GZO/Cu2O-Ag2O thin films as an oxide p-n heterojunction, the ratio increase of current of the GZO/Cu2O-Ag2O thin films under illumination was higher than that of the GZO/Cu2O thin films. This result implies that the Cu2O-Ag2O thin films could be used to increase photovoltaic effect on oxide solar cells.
|Appears in Collections:||材料科學與工程學系|
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