Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/11337
標題: 以電漿輔助化學氣相沉積法利用氨氣/丙烷 混合氣體製備n型非晶質碳薄膜
n-Type amorphous carbon films prepared by radio-frequency plasma enhanced chemical vapor deposition using ammonia/propane mixtures
作者: 雷宏毅
Lei, Hung-Yi
關鍵字: 電漿輔助化學氣相沉積法
PECVD
出版社: 材料科學與工程學系所
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摘要: 本研究以射頻電漿輔助化學氣相沉積法 (RF-PECVD) 利用氨氣及丙烷製備n型非晶質碳膜。本研究內容包含三部分:第一部分探討不同NH3/(C3H8+NH3)比例對n型非晶質碳膜性質之影響。實驗結果顯示n型非晶質碳膜之沉積速率與光學能隙值隨氨氣含量增加而下降,但ID/IG隨氨氣含量增加而增加。此表示碳膜之氨氣含量增加,非晶質碳膜結構趨近於石墨化。由J-V曲線可以判斷出此元件具有整流特性且輸出電流密度值隨氨氣含量增加而增加。第二部分為NH3/(C3H8+NH3)比例固定80 %,探討不同退火溫度對n型非晶質碳膜性質之影響。實驗結果顯示n型非晶質碳膜之微結構及光學能隙在退火溫度573 K到598 K區間只有稍微改變,但在超過598 K後則有明顯之變化。由J-V曲線可以觀察出退火溫度從573 K增加至598 K時電流密度值為增加,但是從598 K增加至648 K時電流密度值為減少。第三部分為退火溫度固定598 K,探討不同NH3/(C3H8+NH3)對n型晶質碳膜性質之影響。實驗結果顯示ID/IG值、sp2含量及電流密度值與未進行熱退火比較之下有增加的趨勢。由以上結論得知,n型非晶質碳膜經過熱退火溫度598 K後,其薄膜性質有較好。
In this study, n-type amorphous carbon (a-C) films were prepared by RF-plasma enhanced chemical vapor deposition (RF-PECVD) using ammonia(NH3) and propane (C3H8). The content includes three parts. First, the effects of different NH3/(C3H8+NH3) ratios on the characteristics of n-type amorphous carbon films were investigated. Experimental results show that the deposition rate and optical band gap of a-C:N films decrease with increasing the NH3/(C3H8+NH3) ratio, but the ID/IG increases. This result indicates that as NH3 is added in C3H8, the a-C:N films structure shifts to graphite-like. The J-V behavior of a-C:N/p-Si device exhibits the rectifying behavior, and current density values of a-C:N/p-Si device increases with increasing NH3/(C3H8+NH3) ratios. Second, the NH3/(C3H8+NH3) ratio is fixed at 80 %, the effects of different annealing temperatures on the characteristics of n-type a-C films were investigated. Experimental results show that the microstructure and optical band gap of n-type a-C films slightly change as the annealing temperature increases from 573 to 598 K. As the annealing temperature exceeds 598 K, the microstructure and optical band gap of n-type a-C films strictly change. The current density values of a-C:N/p-Si device increase with increasing the annealing temperature from 573 to 598 K, but decrease with increasing the annealing temperature from 598 to 648 K. Finally, as the annealing temperature is fixed at 598 K, the effects of different NH3/(C3H8+NH3) ratios on the characteristics of n-type a-C films were investigated. Experimental results show that the ID/IG values, current density values, and sp2 carbon content increases after annealing. When the n-type a-C films were annealed at the temperature of 598 K, the characteristics of amorphous carbon films show a better performance.  
URI: http://hdl.handle.net/11455/11337
其他識別: U0005-2906201317161800
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2906201317161800
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