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Synthesis, Characterization and Application of Low Dimensional Nanostructures of Metal Compounds
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|摘要:||本論文研究中，利用電漿輔助化學氣相沉積系統(Microwave Plasma-Enhanced Chemical Vapor Deposition, MPECVD)成功於矽基材上合成出五氧化二釩奈米線。由於製程中無使用觸媒，因此可以驗證奈米線的成長機制為VS機制。五氧化二釩奈米線的單晶斜方晶結構，成長方向為。另外，陰極激發光（cathodoluminescence, CL）光譜得知，五氧化二釩奈米線由於量子尺寸效應，以及奈米線中含有大量缺陷或氧空缺的緣故，造成了光譜紅移現象。研究結果顯示，由於製程時間短，讓MPECVD成為一種高效率，並可穩定地控制生長不同形貌之五氧化二釩奈米材料的方法。
相較於MPECVD，熱化學氣相沈積系統 （Thermal Chemical Vapor Deposition, TCVD)，為一種廣泛並有效控制基板溫度的生長方式。本研究中利用熱化學氣相沉積法成功的於矽基板上合成出摻雜鋁之五氧化二釩奈米線，二氧化釩奈米線以及硫化鋅奈米線。由於無使用觸媒，因此可以驗證奈米線的成長機制為VS機制。研究結果顯示，摻雜鋁之五氧化二釩奈米線為單晶的orthorhombic (斜方晶)結構，成長方向沿著。光致發光(photoluminescence, PL)光譜顯示有紅移的現象，主要是因為接近價帶的載子濃度增加以及氧空缺的緣故。酒精氣體感測結果顯示，五氧化二釩是高選擇性、高穩定性的感測材料，摻雜鋁之五氧化二釩在低酒精濃度有較高的靈敏度，但當濃度提高時，由於鋁在五氧化二釩晶體內會產生散射中心，導致電子流動受到阻礙，因此靈敏度會下降。由XRD與TEM結構分析得知，二氧化釩奈米線為單晶的monoclinic (單斜晶)結構，成長方向為，其形貌為矩形結構。硫化鋅奈米線為單晶結構且同時有wurtzite以及sphalerite相共存於奈米線中，成長方向分別為與方向。陰極激發光（cathodoluminescence, CL）光譜得知ZnS發光落於藍光範圍，主要是由直接能隙、硫的空缺以及表面缺陷等原因造成的。UV光感測分析得知，ZnS奈米線有極佳的光感特性，而可以用於感光原件中。|
In this thesis, V2O5 nanowires have been fabricated successfully on the Si substrate by Microwave Plasma-Enhanced Chemical Vapor Deposition (MPEVCD) system. Since no catalyst was applied to this study, the result demonstrates that the growth belongs to the self-assembled V-S growth mechanism. The V2O5 nanowires were in a single-crystalline orthorhombic phase and that the growth direction was along the . Cathodoluminescence spectra exhibited a red-shift, resulting from the presence of significant O deficiencies. Our experiments and observations suggest that MPECVD is a highly effective and promising method for the fabrication of V2O5 nanowires. One of the merits thermal chemical vapor deposition (TCVD) is its well-defined substrate temperature which is in general much higher than the MPECVD. In this study, Al doped V2O5 nanowires, VO2 nanowires, and ZnS nanowires have been fabricated successfully on the Si substrate by thermal CVD. Since no catalyst was applied to this study, the result demonstrates that the growth belongs to the self-assembled V-S growth mechanism. The Al doped V2O5 nanowires were in a single-crystalline orthorhombic phase and that the growth direction was along the . Green emission was observed in the photoluminescence (PL) spectra, suggesting that the Al doped V2O5 nanowires exhibited a red shift at an optical absorption wavelength due to the increase in the carrier concentration close the valence band in the band gap and O defects in the nanowires. The gas sensing measurements showed that the V2O5 nanowires were highly selective and stable ethanol sensor materials. Gas sensors properties of the Al doped V2O5 nanowires exhibit higher ethanol gas sensitivity at low ethanol concentration than pure V2O5 nanowires. Al atoms were created a lot of scattering center in the V2O5 crystal to impede the movement of electrons and reduce the electron mobility. Therefore, the sensitivity were not obvious increases. The grown VO2 nanowires were determined to be a rectangular shaped morphology. The XRD and HRTEM analysis shows that the nanowires are single crystalline monoclinic phase structure with a preferential growth direction of . Rapid large-scale production of ZnS nanowires on a Si substrate has been achieved by thermal evaporation. Analysis by XRD and TEM confirmed that single-crystalline wurtzite and sphalerite ZnS coexisted in the as-synthesized nanowires. The growth direction of the ZnS nanowires in wurtzite and sphalerite phases were along [0 0 0 2] and [1 1 1], respectively. The ZnS nanowires of both phases showed almost identical luminescence spectra in the blue region. The blue emission could be explained by the direct band-to-band emission, sulfur vacancies, self-activated sulfur defects on the surfaces, and interstitial lattice defects. The photo-sensing measurement shows that the current rapidly increases to a steady value under the UV light on and then gradually recovers closed to its initial value while the UV light off. The photodetectors fabricated from ZnS nanowires show high photo-sensing ability, which suggests that the ZnS nanowires are promising candidates as photo-sensing devices.
|Appears in Collections:||材料科學與工程學系|
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