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Fabrication of thin-film LEDs using GaN-on-Si epilayers
silicon removal technique
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二次翻轉發光二極體(Secondary-transferred LEDs, S-LEDs)透過基板置換配合高反射鏡面，使得元件在高電流注入下，加速散熱速度並降低元件效率下降效應，相較於傳統水平式發光二極體(Lateral LEDs, L-LEDs)，亮度獲得大幅提升。垂直型發光二極體(Vertical LEDs, V-LEDs)利用金屬作為接合材料，其電流分布以及散熱效果有更大的改善，與前二者相比，具有更佳的光電特性。
本實驗中以三種不同結構元件作比較，在通入高電流700 mA時，二次翻轉型和垂直型結構之元件輸出功率分別為155.87 mW和261.07 mW，與水平結構90.88 mW相比，分別增加約71.5 %和187.3 %；表面溫度量測結果得知，二次翻轉型無與垂直型結構的平均表面溫度分別為80.98 °C和56.91 °C，而一般水平結構發光二極體的表面溫度約為90.72 °C。
In this thesis, thin-film blue light-emitting diodes (LEDs) using GaN-on-Si(111) epilayers were fabricated via wafer bonding and substrate removal processes. As compared to the common sapphire substrate, the Si substrate has better properties in electrical conductivity, thermal conductivity, and thermal stability. The substrate-free LEDs were expected to show a higher efficiency and better heat dissipation due to the improvement of current crowding issue. Moreover, the Ag/In bonding layer was also used to enhance the thermal dissipation, and hence reduce the degree of droop in LED efficiency. To understand the influence on LED performances, three kinds of LEDs were prepared in this study. They are named as the lateral LEDs (L-LEDs), secondary-transferred LEDs (S-LEDs), and vertical-structured LEDs (V-LEDs). At an injection current of 700 mA, the light output power of L-LEDs, S-LEDs and V-LEDs were 90.88, 155.87 and 261.07 mW, respectively. Obviously, the light output power of S-LEDs and V-LEDs were enhanced by 71.5 and 187.3 % compared to that of L-LEDs. The surface temperatures of L-LEDs, S-LEDs and V-LEDs were measured to be 90.72, 76.7, and 58.1 �C, respectively. The results clearly indicate that the good performance of LED devices can be achieved by using a thin-film device configuration.
|Appears in Collections:||材料科學與工程學系|
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