Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/11356
標題: 利用乙炔/氮氣混合氣體以感應耦合式電漿輔助熱化學氣相沉積製備碳薄膜及其特性分析
Characteristics of carbon thin films prepared by thermal chemical vapor deposition enhanced with inductively coupled plasma using acetylene/nitrogen mixtures
作者: 吳冠璋
Wu, Kuan-Chang
關鍵字: 乙炔
acetylene
熱化學氣相沉積
感應耦合電漿
碳薄膜
thermal chemical vapor deposition
inductively coupled plasma
carbon films
出版社: 材料科學與工程學系所
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摘要: 本篇論文主要是以感應耦合式電漿輔助熱化學氣相沉積法製備碳薄膜,並探討不同乙炔/氮氣比例、射頻功率及沉積溫度對碳薄膜性質之影響。本實驗分別利用殘留氣體分析儀、場發射掃描式電子顯微鏡、X光繞射儀、拉曼散射光譜儀、X光光電子能譜儀、原子力顯微鏡、接觸角量測儀及四點探針儀來分析製程上的殘留氣體、碳薄膜的沉積厚度、微觀結構、表面特性與電學性質。由殘留氣體分析結果可知,氣相中的主要產物包含了 H2、CH3、CH4、C2H、C2H2、HCN 和 N2 (or C2H4)。研究結果發現,碳薄膜的沉積速率隨著 C2H2/(C2H2+N2) 比例增加、射頻功率減少及沉積溫度的下降而上升,其活化能為 184 kJ/mol。結晶度隨著 C2H2/(C2H2+N2) 比例增加、射頻功率減少及沉積溫度的上升而下降。結構有序程度隨著 C2H2/(C2H2+N2) 比例增加、射頻功率增加及沉積溫度的下降而上升。sp2 C=C 鍵結的相對含量隨著 C2H2/(C2H2+N2) 比例增加、射頻功率增加及沉積溫度的下降而下降。當 C2H2/(C2H2+N2) 比例從 20 % 增加至 80 % 時,表面粗糙度由 4.1 nm 下降至 3.1 nm,從 80 % 增加至 100 % 時,表面粗糙度則由 3.1 nm 上升至 3.5 nm;當射頻功率從 0 W 增加至 300 W 時,表面粗糙度由 5.3 nm 下降至 2.9 nm,從 300 W 增加至 400 W 時,表面粗糙度則由 2.9 nm 上升至 3.1 nm;當沉積溫度從 1173 K 上升至 1273 K 時,表面粗糙度由 4.1 nm 下降至 2.8 nm。水接觸角之趨勢則與表面粗糙度呈相反關係。最後,電阻率隨著 C2H2/(C2H2+N2) 比例、射頻功率及沉積溫度的增加而增加。
This study investigates the effects of different acetylene/nitrogen ratios, radio-frequency (rf) powers, and deposition temperatures on the properties of carbon thin films prepared by thermal chemical vapor deposition (thermal CVD) enhanced with inductively coupled plasma (ICP). The residual gases, thickness, microstructure, surface properties, and electrical properties of carbon thin films are investigated by residual gases analyzer, field emission scanning electron microscopy, X-ray diffractometer, Raman scattering spectrometer, X-ray photoelectron spectrometer, atomic force microscopy, contact angle meter, and four-points probe, respectively. Residual gases analysis results reveal that the main species in the gas phase contain H2, CH3, CH4, C2H, C2H2, HCN, and N2 (or C2H4). Experimental results also indicate that the deposition rate of carbon thin films increases with increasing the C2H2/(C2H2+N2) ratio and deposition temperature, but decreases with increasing the rf power. The activation energy of carbon deposition in this study is 184 kJ/mol. The crystallinity of carbon thin films increases with increasing the rf power, but decreases with increasing the C2H2/(C2H2+N2) ratio and deposition temperature. The ordering degree of carbon thin films increases with increasing the C2H2/(C2H2+N2) ratio and rf power, but decreases with increasing the deposition temperature. The number of sp2 carbon sites increases with increasing the deposition temperature, but decreases with increasing the C2H2/(C2H2+N2) ratio and rf power. As the C2H2/(C2H2+N2) ratio increases from 20 to 80 %, the rf power increases from 0 to 300 W, and the deposition temperature increases from 1173 to 1273 K, the surface roughness of the carbon thin films decreases from 4.1 to 3.1 nm, 5.3 to 2.9 nm, and 4.1 to 2.8 nm, respectively. However, as the C2H2/(C2H2+N2) ratio increases from 80 to 100 % and the rf power increases from 300 to 400 W, the surface roughness of the carbon thin films increases from 3.1 to 3.5 nm and 2.9 to 3.1 nm, respectively. Moreover, the water contanct angles show an opposite trend to the surface roughness of the carbon thin films. Finally, the electrical resistivity of carbon thin films increases with increasing the C2H2/(C2H2+N2) ratio, rf power, and deposition temperature.
URI: http://hdl.handle.net/11455/11356
其他識別: U0005-2607201302333800
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2607201302333800
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