Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/11373
標題: 射頻磁控濺鍍硫氧化鋅薄膜的光學性質與微結構探討
Microstructure and Optical Properties of Zn(O,S) Thin Films Prepared by Radio Frequency Magnetron Sputtering
作者: 郭柄豪
Kuo, Bing-Hau
關鍵字: 薄膜太陽能電池
thin film solar cell
CIGS
緩衝層
硫化鋅
CIGS
buffer layer
ZnS
出版社: 材料科學與工程學系所
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摘要: 銅銦鎵硒太陽電池為未來各類薄膜太陽能電池中最具發展潛力的材料之一,然而目前高效率的CIGS太陽能電池仍以水浴法所製備的硫化鎘作為主要緩衝層材料,為減少使用鎘離子對環境造成的隱憂,以及產業化的應用考量,尋找無鎘化緩衝層材料和全真空製程將是發展CIGS太陽能電池產業需要克服的議題之一。 本研究主要是利用射頻磁控濺鍍系統沉積硫氧化鋅薄膜,研究改變不同的射頻濺鍍功率、氬氧混合氣體的氧分率和基板溫度,探討薄膜的微結構與光學特性。在固定基板溫度473K和氧分率2%下,探討射頻功率對薄膜的影響;隨著射頻功率的增加,(002)繞射峰往低角度偏移,同時可以發現硫氧化鋅薄膜為一HCP的結構。電子能譜的定量分析可以發現,隨著功率增加氧含量由12.63 at%下降至7.61 at%,而硫含量由35.98 at.%上升至40.71 at%,UV/VIS分析得知之光吸收邊緣由4.12 eV偏移至3.88 eV,亦即射頻功率增加能隙有一紅移現象。 在固定基板溫度473K和射頻功率175W下,探討通入氣體氧分率對薄膜的影響。隨著氧分率超過4%後,所產生的薄膜為一非晶結構,由對薄膜的定量分析得知隨著氧分率增加,氧含量由10.79 at%提升至62.31 at%,而硫含量由40.35 at%下降至4.55 at%,其光吸收邊緣由4.03 eV偏移至4.17 eV,即氧分率增加能隙有一藍移現象。 而在固定射頻功率和氧分率4%下,探討改變基板溫度對薄膜的影響。由X光晶體繞射分析發現隨著基板溫度增加,(002)繞射峰往高角度偏移;由TEM的選區繞射確定為HCP結構,而光學吸收邊緣波長隨著基板溫度增加由4.10 eV偏移至4.03 eV,亦即基板溫度增加能隙有一紅移現象。
Cu(In,Ga)Se (CIGS) solar cell is one of most promising material in thin film solar cell. The chemical bath deposition CdS is typically used as buffer layer in high efficiency solar cell. However, Cd is very toxic and taken consideration in great impact to environment. It is quite important issue for mass production to search Cd-free alternated buffer layer and develop all-vacuum process in the future. A series of ZnO1−xSx films prepared by radio-frequency reactive magnetron sputtering on soda-lime glasses as substrates. The composition, structure, and optical properties of the films deposited at different RF power, O2/(Ar+O2) ratio and substrate temperature were studied. The structure of the films deposited under various process parameters was characterized by XRD revealed that the films are wurtzite structure. The XRD peak shift to lower angle position with increasing RF power. The layer composition show that oxygen concentration decrease from 12.63 to 7.61 at.% and sulfur increase from 35.98 to 40.71 at.% as RF power increases. The optical absorption edge shift from 4.12 to 3.88 eV (red shift effect). Amorphous structure was found as O2/(Ar+O2) excess 4%. ESCA show the content of oxygen increase from 10.79 to 62.31 at.% and sulfur decrease from 40.35 to 4.55 at.% with oxygen flow increase. The optical transmission spectra show absorption edge shift 4.03 to 4.17 eV (blue shift effect). The XRD peak shift to higher angle was observed as substrate temperature increased. From TEM observation, the films were wurtzite structure with (002) preferred orientation. The optical absorption edge shift from 4.10 to 4.03 eV (red shift effect).
URI: http://hdl.handle.net/11455/11373
其他識別: U0005-1308201321460600
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1308201321460600
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