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標題: 含感測電路的整合型微壓力感測器
Integrated Micro-pressure sensors with readout circuitry
作者: 楊志偉
Yang, Chih-Wei
關鍵字: capacitive pressure sensor
readout circuits
出版社: 機械工程學系所
引用: [1] [2] [3] [4] Gieles, A.C.M.; ”Subminiature Silicon pressure transducer”, 1969 ISSCC irivine auditorum/univ. of pennsylvania, Digest IEEE ISSCC, Philadelphia Page(s):108-109 [5] Nagata, T.; Terabe, H.; Kuwahara, S.; Sakurai, S.; Tabata, O.; Sugiyama, S.; and Esashi, M.; “Digital compensated capacitive pressure sensor using CMOS technology for low pressure measurements”, Sensors and Actuators, 1991 International Conference on NO 24-27, June 1991 Page(s):308-311 [6] Petersen, K.E.; “Silicon as a mechanical material”, Proceedings of the IEEE on Vol.86, NO 8, Aug. 1998 Page(s):1536-1551 [7] Smith, M.J.S.; Bowman, L.; and Meindl, J.D.; “Analysis, design, and performance of micropower circuits for a capacitive pressure sensor IC”, Solid-State Circuits, IEEE Journal on Vol. 21, NO 6, Dec 1986 Page(s):1045 – 1056 [8] Paul, O.; Haberli, A.; Malcovati, P.; and Baltes, H.; “Novel integrated thermal pressure gauge and read-out circuit by CMOS IC technology”, Electron Devices Meeting, 1994. Technical Digest., International 11-14 Dec. 1994 Page(s):131-134 [9] Yamada, M.; Takebayashi, T.; Notoyama, S.; and Watanabe, K.; “A switched- capacitor interface for capacitive pressure sensors”, Instrumentation and Measurement, IEEE Transactions on Vol.41, NO 1, Feb. 1992 Page(s):81-86 [10] Cho, S.T.; Najafi, K.; and Wise, K.D.; “Secondary sensitivities and stability of ultrasensitive silicon pressure sensors”, Solid-State Sensor and Actuator Workshop, 1990. 4th Technical Digest., June 1990 Page(s):184-187 [11] Paul, O.; and Baltes, H.; “Novel fully CMOS-compatible vacuum sensor”, Sensors and Actuators A Vol.46-47, NO 1, June 1995 Page(s):143-146 [12] Folkmer, B.; Steiner, P.; and Lang, W.; “A Pressure Sensor Based On A Nitride Membrane Using Single Crystalline Piezoresistors”, Solid-State Sensors and Actuators, 1995 and Eurosensors IX. Transducers ''95. The 8th International Conference on Vol.2, NO 25-29, June 1995 Page(s):574-577 [13] Cristalli, C.; and Neuman, M.R.; ”A capacitive pressure sensor for measurement of interfacial pressure between a sphygmomanometer cuff and the arm”, Engineering in Medicine and Biology Society, 1995. IEEE 17th Annual Conference on Vol.2, NO 20-23, Sept. 1995 Page(s):1541-1542 [14] Pedersen, M.; Meijerink, M.G.H.; Olthuis, W.; and Bergveld, P.; “An IC-compatible polyimide pressure sensor with capacitive readout”, Sensors and Actuators A , NO 63, Dec. 1997 Page(s):163-168 [15] Paschen, U.; Leineweber, M.; Amelung, J.; Schmidt, M.; and Zimmer, G.; ” A novel tactile sensor system for heavy-load applications based on an integrated capacitive pressure sensor”, Sensors and Actuators A, NO 68 , June 1998 Page(s):294-298 [16] Guo, Shuwen ;Guo, Jun ; and Wen, H. Ko; “A monolithically integrated surface micromachined touch mode capacitive pressure sensor ”, Sensors and Actuators A, NO 80 , June 2000 Page(s):224-232 [17] Trieu, H.K.; Kordas, N.; and Mokwa, W.; “Fully CMOS compatible capacitive differential pressure sensors with on-chip programmabilities and temperature compensation”, Sensors, 2002. Proceedings of IEEE on Vol.2, NO 12-14 ,June 2002 Page(s):1451-1455 [18] Min-Xin Zhou ; Qing-An Huang; Ming Qin; and Wei Zhou; “A novel capacitive pressure sensor based on sandwich structures”, Microelectromechanical Systems, Journal on Vol.14, NO 6, Dec. 2005 Page(s):1272-1282 [19] Herbert Resisman, and Peter S. Pawlik, Elasticity Theory and Applications, Chapter 6.5 Plate Theory Page(s):242-245 [20] 莊達人,VLSI製造技術,高立圖書有限公司,2003。 [21] 行政院國家科學委員會,微機電系統技術與應用,精密儀器發展中心出版,2003。 [22] Dai, Chi. L.; Chang, Shih. Chen.; Lee, Chi Yuan “Capacitive micro pressure sensors with underneath readout circuit using a standard CMOS process”, Journal of the Chinese Institute of Engineers, Vol. 26, No. 2, Dec. 2003 Page(s):237-241 [23] Yang, Lung-Jieh ;Lai, Chen Chun ; Dai, Ching Liang ;Chang, Pei-Zen, “A Piezoresistive Micro Pressure Sensor Fabricated by Commercial DPDM CMOS Process” Tamkang Journal of Science and Engineering, Vol. 8, No 1, Feb. 2005 Page(s): 67-73 [24] Wang1, Hsin Hsiung ;Hsui, Chun Wei ;Liao, Wei Hao Liao ;Yang, Lung Jieh ; Dai, Ching Liang, “Micro Pressure Sensors of 50μm Size Fabricated by a Standard CMOS Foundry and a Novel Post Process”, Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference , NO 22-26 , Jan. 2006 Page(s):578 - 581
摘要: 本文利用CMOS標準製程製作壓力感測器,並整合積體電路,其製程處理分兩階段:先以濕式蝕刻去除金屬犧牲層,將外觀六邊形蜂窩形狀懸浮釋放,其剖面如三明治形狀的結構層;接著再用高分子Parylene封裝壓力單元。此壓力感測器以電容變化為基準之方式讀出,積體電路的部份利用兩電極板之感應電荷所產生之電流並以運算大器讀出訊號。 本文之特點(1)選用六角蜂窩形狀將面積使用率達到最高(2)數個小感測元件以並聯方式提高電容值(3)利用較高層別以減少接線點之寄生電容(4)利用選擇性高之濕蝕刻溶液移除犧牲層鋁金屬(5)選用LPCVD高溫裂解低溫沉積,低楊氏系數之高分子薄膜封裝感測單元。 讀出訊號部份以一種簡單的感測電路,用一個差動放大增益約(Differential Pair Gain)>40dB以及相位邊際增益(PM)>60o,外加直流偏壓載有小振幅之交流訊號於電容感測式壓力結構上,其線性條件壓力測量範圍以0-200kPa,靈敏度約1.5mV/kPa。
This study investigates the fabrication of integrated pressure sensors using the commercial 0.35 μm CMOS process and a post-process. The pressure sensors, which are capacitive type, contains 128 sensing cells in parallel. Each sensing cell is a regular hexagon shape. The post-process uses wet etching to remove sacrificial layers, which are stacked layers formed from metal and via layers, to suspend the membrane of pressure sensor. Then, LPCVD parylene is employed to seal the etch holes of pressure sensors. Besides, this circuits realize a simple method to convert the capaictance variation of the pressure sensors into the voltage output. Differential-pairs-input opera-tional amperifier has a differential- pair-mode -gain(Ad) of 40dB and a phase-margin 60o. The sensitivity of the pressure sensors are 1.5mV/kPa in pressure range of 0-200kPa.
其他識別: U0005-0108200614414700
Appears in Collections:機械工程學系所



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