Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/1577
標題: 利用紫外線圖案化鋯鈦酸鉛薄膜
Patterning of Lead Zirconate Titanate Thin Film by ultraviolet-light
作者: 張爵堂
Chang, Chueh-Tang
關鍵字: 鋯鈦酸鉛
PZT
圖案化
光解焦化
Pattern
Photolysis
出版社: 機械工程學系所
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摘要: 圖案化鋯鈦酸鉛薄膜是製作鋯鈦酸鉛微致動器與微感測器的其中一個重要製程。常見的圖案化鋯鈦酸鉛薄膜技術中,包含化學性與物理性蝕刻兩種技術。在化學性蝕刻製程中,由於鋯鈦酸鉛薄膜具有鉛、鋯、鈦三種不同金屬成分,所以在化學蝕刻時會因蝕刻溶液對不同金屬材料具不同的蝕刻速率,過程中常會有殘留物產生。物理性蝕刻則在圖案化鋯鈦酸鉛薄膜中有較差的選擇比,需選用厚度較大的光阻材料。本論文開發了一種圖案化鋯鈦酸鉛薄膜的技術,主要利用光解焦化的步驟達到圖案化的目的。此技術首先是將鋯鈦酸鉛溶膠凝膠溶液旋塗於基板上,並且利用紫外線做曝光來達成光解焦化。在光解焦化中定義出曝光與未曝光區域,將光罩的圖形轉移到鋯鈦酸鉛薄膜上。光解焦化後,再將鋯鈦酸鉛薄膜放置在非離子性界面活性劑中以去除未曝光之區域。最後再利用650℃高溫燒結將鋯鈦酸鉛薄膜燒結成具結晶相的薄膜材料。 利用紫外光做光解焦化之鋯鈦酸鉛薄膜其殘留極化量為21.4 μc/cm2、矯頑電場為45 kV/cm和漏電流為0.027。相對於利用加熱板做焦化時之鋯鈦酸鉛薄膜其殘留極化量為17.24 μc/cm2、矯頑電場為104 kV/cm、漏電流為0.043。實驗結果發現,相較於加熱板焦化作用之鋯鈦酸鉛薄膜,利用紫外光解焦化作用之薄膜有較佳的鐵電性質。利用紫外光解焦化技術圖案化之鋯鈦酸鉛薄膜具理想的幾何結構形狀。
The patterning technique of PZT thin film is an essential process in device fabrication processes for application in microsensors and microactuators. Chemical etching and physical etching processes are two of the most commonly used techniques to pattern PZT thin film. However ,the difference in etching yields of Pb ,Zr, and Ti leads to undesired residues on PZT films in chemical etching process. The poor selectivity of PZT over photoresist mask and platinum electrodes causes unsatisfactory PZT pattern. This thesis developed a PZT pattern technique by photolysis processes PZT thin films were first spin coated on the substrate and exposed by UV light for photolysis step. The UV photolysis step defined exposed and unexposed area by mask ,and the pattern will be transferred to PZT thin film. After photolysis, PZT films were placed in non-ionic surfactant to remove unexposed area. Finally, PZT films were sintered at 650℃ in the furnace for crystallization. Experimental results showed that remnant polarization of PZT film by UV photolysis was 21.4(μc/cm2),which was compared to 17.24(μc/cm2) by hot plate prolysis. Coercive fields were 45 and 104 kV/cm by UV photolysis and hot plate prolysis, respectively. Dielectric loss was 0.027 by UV photolysis which was much smaller than 0.043 by hot plate prolysis. PZT thin films patterned by UV photolysis showed satisfactory geometries.
URI: http://hdl.handle.net/11455/1577
其他識別: U0005-1808201122101700
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1808201122101700
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