Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17006
標題: Characteristics of ZnO films grown on (11-20) sapphire substrates by atomic layer deposition
生長於(11-20)面氧化鋁基板之原子層沉積氧化鋅薄膜特性之研究
作者: Yen, Kuo-Yi
嚴國藝
關鍵字: ZnO
氧化鋅
ALD
原子層沉積
出版社: 物理學系所
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摘要: 本論文研究採用原子層沉積的方式生長氧化鋅(ZnO)薄膜於(11-20)面氧化鋁基板上。藉由低溫氧化鋅緩衝層生長溫度的調變已達到最佳氧化鋅品質之製程條件。氧化鋅薄膜之微結構,表面型態及發光特性等性質,我們採用X-光分析,場發射掃描式電子顯微鏡及光激發螢光量測鑑定之。實驗結果顯示緩衝層退火及成長後退火對於氧化鋅薄膜之發光特性有很大的效益。此外我們亦發現氧化鋅薄膜厚度增加有助於改善薄膜之發光特性。
Zinc oxide (ZnO) films were grown at 600℃ on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. Low-temperature (LT) ZnO buffer layers, 50nm in thickness, were deposited to optimize the growth process for achieving high quality ZnO films. The influence of buffer-layer on the optical properties of ZnO films was also studied. θ-to-2θ X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and photo luminescence (PL) measurements were conducted to reveal the structural, morphological and optical characteristics of the ZnO films. Based on the characterization data, buffer-layer annealing and post-annealing were found to enhance the optical characteristics of ZnO films.
URI: http://hdl.handle.net/11455/17006
其他識別: U0005-1008200711394400
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1008200711394400
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