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標題: Subband Properties of PMOS Inversion Layer Using Strained Si1-xGex Alloys on (111) Si Substrate
作者: 卓大鈞
Cho, Ta-Chun
關鍵字: strain
inversion layer
出版社: 物理學系所
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摘要: Integrated circuits materials gradually develop for SiGe alloys now,and MOSFET is an important component of integrated circuits.In this study,we research the valence band structure of strained SiGe alloys in the channel.We use k‧p method and triangular-well approximation to discuss subband properties of PMOS inversion layer.By changing the electric field and the Ge concentration,we compare the results between Si(110) and Si(111)surfaces,which includes density of states and 2D equi-energy contours of inversion layer.Furthermore,three kinds of effective mass─Quantized Mass,Carrier Concentration Mass,and Conductivity Mass are defined here. Theoretical calculation show density of states of Si(110) and Si(111) surfaces decrease as increasing Ge concentration.Near the band edges,density of states are almost constant.It could resemble the 2D free particles.And we fix the electric field as 1MV/cm, three kinds of effective mass decrease as increasing Ge concentration. It agrees to the experimental results that strained SiGe alloys and high Ge content can enhance mobility.
現在積體電路材料逐漸發展為矽鍺合金,而MOSFET是積體電路中重要的元件之一。我們在此研究通道材料為應變矽鍺合金的價帶結構,利用k‧p method和三角井近似探討PMOS反轉層次能帶性質,改變電場、改變鍺濃度,比較Si(110)、Si(111)的結果,包括反轉層Density of States、2D Equi-energy Contours,並在此定義了三種等效質量─Quantized Mass、Carrier Concentration Mass、Conductivity Mass。 理論計算發現,增加鍺濃度時,Si(110)、Si(111)的Density of States都有減小的趨勢,在Band edge附近的Density of States幾乎是常數,載子可近似為二維自由粒子,且固定電場F=1MV/cm,增加鍺濃度,三種等效質量都有減小的趨勢,這與應變矽鍺合金、高鍺濃度可提升載子遷移率的實驗結果一致。
其他識別: U0005-1907201123043600
Appears in Collections:物理學系所



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