Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17022
標題: One-step growth of ZnO nanorods and a ZnO film for dye-sensitized solar cells
單步驟成長氧化鋅膜和奈米柱染料敏化太陽電池
作者: 賴明宏
Lai, Ming-Hong
關鍵字: sapphire
藍寶石
出版社: 物理學系所
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摘要: 本實驗目的在開發不必使用FTO導電層的氧化鋅奈米柱染料敏化太陽能電池(Dye-Sensitized Solar Cells, DSSC ),而以氧化鋅(ZnO)薄膜作為透明導電層。方法是用化學氣相沉積法(CVD)在藍寶石基板上同時成長氧化鋅薄膜及氧化鋅的柱狀結構。由於氧化鋅奈米柱與氧化鋅薄膜為同一介質的薄膜,能有效的減少光電子在不同介面上的耗損,提升光電流,增加太陽能電池的轉換效率。其製程在鎢舟盛以鋅粒,將藍寶石基板置於下游,加熱至溫度870℃,通入氬氣及氧氣,後續氧化鋅奈米柱浸泡於60℃的D149染料中八小時。配合SEM圖得知ZnO薄膜之厚度2~3μm,奈米柱直徑160~220nm,奈米柱長度12~15μm。其在AM1.5光源(100mW/cm2)照射下,最佳電流密度=15.7 mA/cm2,Voc=0.55V, FF=21.1%,效率1.82 %。此新型染料敏化太陽能電池比用FTO之傳統的染料敏化太陽能電池的效率1.37 %更高。開路電壓衰退分析得知電子的衰減時間大大的提升及避免介面電子的散射。
This work investigates the sequential growth of a ZnO film and ZnO nanorods using the one-step chemical vapor deposition (CVD) method. The ZnO film replaces fluorine-doped tin oxide as the transparent conducting oxide layer used in dye-sensitized solar cells (DSSCs). In the CVD growth, c-plane (0001) sapphire single-crystalline substrates were as loaded in an alumina boat downstream from the source material zinc. The furnace was heated to 870℃ and maintained at the heated temperature for 40 min. Ar and O2 gases were led into the quartz tube. Field-emission scanning electron microscopic images shows that the ZnO film had a thickness of 2~3 μm. The diameters of the nanorods were in the range of 160-220 nm and the length was 12~15μm. The ZnO film/rods structure was sensitized by immersion in a at 60℃, D149 dye solution for 8 h.Testing showed that under AM1.5 illumination, a short-circuit current density of 15.7mA/cm2, an open-circuit voltage of 0.55V, a fill factor of 21.1% and a conversion efficiency of 1.82% were achieved. Open-circuit voltage decay measurements show the response times in the New nanorod DSSC are much longer than that in the conventional DSSC. The enhanced response time is attributed to the new ZnO film/nanorod structure, which eliminates the junction between the film and the nanorods, reducing the carrier scattering at the boundary, hence, resulting in enhanced efficiency.
URI: http://hdl.handle.net/11455/17022
其他識別: U0005-2206201117434800
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