Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17029
標題: 利用近場光學顯微鏡量測光電元件在局域光照下的光電流變化
Measurement of photocurrent variations of optoelectronic devices under a localized illumination by using a scanning near-field microscope
作者: Tao, Jing-Jie
陶靜傑
關鍵字: scanning near-field optical microscope
近場光學顯微鏡
SNOM
LED
photocurrent
氮化銦鎵發光二極體
光電流
出版社: 物理學系所
引用: 參考資料 [1] M. De Serio, R. Zenobi, V. Decket, Trends in Analytical Chemistry 22, 2 (2003). [2] 蔡定平, “近場光學顯微術及其應用”, 科儀新知, 第17卷, 第5期, p4 (1996). [3] 蔡定平, “掃描近場光學顯微儀”, 科儀新知, 第21卷, 第5期, p17 (2000). [4] 蔡定平, 高宗聖 ”近場光學新視界”科學發展, 第386期, p22-27 (2005). [5] Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, Journal of Crystal Growth 144, 133 (1994). [6] T. S. Zheleva, O. H. Nam, M. D. Bremser and R. F. Davis, Appl. Phys. Lett. 71, 17 (1997). [7] K. Tadatomo, H. Okagawa, Y. Ohuchi, T Tsunekawa, Y. Imada, M. Kato and T. Taguchi, Jpn. J. Appl. Phys. 40, 583 (2001). [8] G. Marutsuki, Y. Narukawa, T. Mitani, T. Mukai, G. Shinomiya, A. Kaneta, Y. Kawakami and SG. Fujita, Phys. Stat. Sol. 192, 110 (2002). [9] L. Novotny, C. Hafner, Phys. Rev. E 50, 4094 (1994). [10] L. Novotny, D.W. Pohl, B. Hecht, Opt. Lett. 20 , 970 (1995). [11] D. Courjon, “Near-Field Microscopy and Near-Field Optics”, Imperial College Press (2003). [12] E. Betzig, J. K. Trautman, T. D. Harris, J. S. Weiner, R. L. Kostelak, Science 251, 1468 (1991). [13] P. Hoffman, B. Dutoit, and R.P. Salathe, Ultramiscopy 61, 165 (1995) [14] R. M. Stockle, C. Fokas, V. Deckert, R. Zenobi, B. Sick, B. Hecht, U. Wild, Appl. Phys. Lett. 75, 160 (1999). [15] G. Genolet, M. Despont, P. Vettiger, U. Staufer, W. Noell, N.F. de Rooij, T. Cueni, M.P. Bernal, F. Marquis-Weible, Rev. Sci. Instrum. 72, 3877 (2001). [16] K. Karrai and R. D. Grober , Appl. Phys. Lett. 66, 14 (1995). [17] C. F. Lin, J. J. Dai, M. S. Lin and C. C. Chen, Electrochemical and Solid-State Letters 13, 309 (2010). [18] Y. J. Lee, M. H. Lee, C. M. Cheng and C. H. Yang, Appl. Phys. Lett. 98, 263504 (2011). [19] 莊佳璁, 國立中興大學物理所碩士論文 (2010). [20] C. F. Lin, J. J. Dai, M. S. Lin, K. T. Chen, W. C. Huang, C. M. Lin, R. H. Jiang and Y. C. Huang, Applied Physics Express 3, 031001 (2010). [21] C. Obermuller and K. Karrai, Appl. Phys. Lett. 67, 23 (1995). [22] “Scanning Near-Field Optical Microscope attoSNOM III“, attocube systems AG, Koniginstr. 11a Rgb D-80539 (2007). [23] A. Kaneta, K. Okamoto, Y. Kawakami and S. Fujita, Appl. Phys. Lett. 81, 23 (2002). [24] J. Kim, K. Samiee and J. O. White, Appl. Phys. Lett. 80, 6 (2002). [25]Y. C. Huang, C. F Lin, S. H. Chen, J. J. Dai, G. M. Wang, K. P. Huang, K. T. Chen and Y. H. Hsu, Optics Express 19, S1 (2010). [26] A. Vertikov, M. Kuball, A. V. Nurmikko, Y. Chen and S. Y. Wang, Appl. Phys. Lett. 72, 21 (1998).
摘要: We studied the optical and structure properties of blue light-emitting diodes(LED) by using Scanning Near-Field Microscope. The samples are InGaN-based LED on a planer substrate and on a patterned substrate. The Electroluminescence(EL) distribution mappings were compared with the photocurrent variations mappings under a localized illumination at same areas for two kinds of samples. We noted that the patterned substrate can effectively trap dislocations to the bottoms of pattern area to affect the EL distributions. Besides, the different energy band gaps corresponding to lights and dark spots were measured by localized EL spectrum and photoluminescence spectrum. In this study, we found that patterned substrate can reduce and localize dislocation defects to optimize light efficiency and affect photocurrent variations.
本實驗使用近場光學顯微術,對藍光發光二極體之光學及結構特性進行研究。研究樣品為氮化銦鎵發光二極體,以及沉積於圖案化基板之相同樣品。我們以定區域方式掃描樣品微小範圍的發光分佈,發現圖案化基板影響發光分佈的形式。且將325 nm雷射導入近場光學探針,來掃描相同區域的激發光電流分佈,此結果與發光分佈有明顯的對應。由此證實圖案化基板對發光二極體主動層的缺陷分佈有侷限的作用,進而影響發光效率與光電流的大小。此外,氮化銦鎵的發光能隙也由電致發光與光致發光光譜得知為458 nm,並與發光強弱位置有相關。在本實驗中,我們利用近場光學顯微術發現到氮化銦鎵多重量子井的強發光區域及少缺陷區域,具有相關性的研究結果。
URI: http://hdl.handle.net/11455/17029
其他識別: U0005-2308201100452400
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2308201100452400
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