Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17030
標題: Valence Band Structure of Strained SixC1-x Alloys in 2D PMOS Inversion Layer and Bulk Material
應變矽碳合金應用於二維PMOS反轉層與塊材之價帶結構
作者: 樊君偉
Fan, Jun Wei
關鍵字: Semiconductor
半導體
Band Structure
Strain
SiC Alloy
PMOS
能帶
應變
矽碳合金
出版社: 物理學系所
引用: 1. Rolf Enderlein, Norman J. M. Horing, Fundamentals of Semiconductor Physics and Devices. 2. Peter Y. Yu, Manuel Cardona, Fundamentals of Semiconductors. 3. Shun Lien Chuang, Physics of Optoelectronic Devices. 4. Ming Fu Li, Modern Semiconductor Quantum Physics. 5. Otfried Madelung, Semiconductors Basic Data.
摘要: MOSFET裡的通道材料傳統以矽為主,但我們研究了新穎通道材料應變矽碳合金的價帶結構。由於元件的微型化造成通道長度減少至~10 nm,所以通道與其上方的氧化層間介面所產生之量子效應就變得十分重要,必須詳細探討。我們計算了在不同的應力作用之下,通道與氧化層介面的二維應變矽碳合金價帶結構,也計算了三維應變矽碳合金塊材的價帶結構以資比較。
The traditional material in the Channel of MOSFET is Silicon. But we research the valence band structure of the original strained SixC1-x alloys in the channel. Because of the miniaturization of devices, the channel length abate to~10nm. So the quantum effects become very important between the channel and the oxide level. It must be discussed in detail. We calculated the 2D valence band structure of the original strained SixC1-x alloys between the channel and the oxide level in different conditions of strain, and also calculated the 3D valence band structure of the strained SixC1-x alloys in the bulk for comparison.
URI: http://hdl.handle.net/11455/17030
其他識別: U0005-1807200711404700
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1807200711404700
Appears in Collections:物理學系所

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.