Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17048
標題: Investigation on the structural properties of CuInxGa1-xSe2 films using transmission electron microscopy
穿透式電子顯微術分析硒化銅銦鎵薄膜微結構特性之研究
作者: 楊培青
Yang, Pei-Ching
關鍵字: CuInGaSe
銅銦鎵硒
selenization
transmission electron microscopy
硒化
穿透式電子顯微術
出版社: 物理學系所
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摘要: 本論文主要以穿透式電子顯微鏡(Transmission Electron Microscopy;TEM)分析銅銦鎵硒CuInxGa1-xSe2;CIGS薄膜之微結構特性並補以x光繞射XRD分析印證TEM分析之結果。CIGS薄膜之製備採用二丁基硒(DTBSe)硒化濺鍍於鈉鈣玻璃(SLG)之銅/銦/鎵金屬薄膜。TEM分析結果顯示多階段溫度硒化製成所製備之CIGS薄膜具備較佳之結晶特性,和XRD分析之結果一致。
In this thesis , transmission electron microscopy (TEM) along with x-ray diffraction (XRD) were conducted to evaluate the structural characteristics of copper indium gallium di-selenide (CuInxGa1-xSe2;CIGS) films. The CIGS films were prepared by selenization of sputtered Cu/In/Ga films on sodium lime glass (SLG) films using ditert-butylselenide (DTBSe) . TEM observation of CIGS films shows that improved crystalline quality is achieved for CIGS films selenized by multi-stage selenization process. The result is consistent with that detected by XRD measurements .
URI: http://hdl.handle.net/11455/17048
其他識別: U0005-2806201117195200
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2806201117195200
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