Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17065
標題: 二硼化鎂奈米結構的製備及其物理性質的研究
Synthesis of MgB2 Nanostructures and its Physical Properties Measurements
作者: 劉士誠
Liu, Shih-Cheng
關鍵字: nanostructures
奈米結構
nanowires
nanoparticles
MgB2
奈米線
奈米微粒
二硼化鎂
出版社: 物理學系所
引用: 中文參考書目 a. 超導物理 張裕桓、李玉芝 等著 (1992) b. 磁性技術手冊 金重勳主編 (2002) c. 奈米科技 馬遠榮著(2002) d. 奈米材料和奈米結構 張立德 牟季美著(2002) e. 奈米材料導論 曹茂盛等編著(2002) f. 真空技術與應用 國科會精密儀器發展中心出版(2001) g. 儀器總覽5材料分析儀器 國科會精密儀器發展中心出版(1998) h. 蔡佩儒 “金屬超導MgB2-XCX的物理性質研究”2002 國立中興大學物理研究所碩士論文 i. 游駿偉 “單一氧化鋅奈米柱有序陣列製備與其光電特性之量測”2005 國立中興大學物理研究所碩士論文 英文參考資料 1. J. Nagamatsu, N. Nakagawa, T. Muranaka,Y Zenitani, J Akimitsu Nature.2001,410,63-64 2. A.Gümbel, J.Eckert, G. Fuchs, K. Nenkov, K.-H. Müller, and L. Schultz APPLIED PHYSICS LETTERS.2002,2725,80 3. H. Abe, M. Naito, K. Nogi, M. Matsuda, M. Miyake, S. Ohara, A. Kondo, T, Fukui Physics C.2003,391,211-216 4. S. Li, T, White, C. Q. Sun, Y. Q. Fu, J. Plevert, and K. Lauren J. Phys. Chem. B.2004,108,16415-16419 5. Slusky, J. S.; Rogado, N.; Regan, K. A.; Hayward, M. A.; Khalifah,P.; He, T.; Inumaru, K.; Loureiro, S. M.; Haas, M. K.; Zandbergen, H. W.;Cava, R. J. Nature 2001, 410, 343. 6. C. Cui, D. Liu, Y. Shen, J. Sun, F. Meng, R. Wang, S. Liu, A.L. Greer, S. Chen, B.A. Glowacki Acta MATERIALIA 2004,52,5757-5760 7. D.D. Radev, M. Marinov, V. Tumbalev, I. Radev, L. Konstantinov PHYSICA C 2005,418,53-58 8. V. Ganpat Pol, S. Vilas Pol, I. Felner, A. Gedanken.Chemical Physics Letters 2006,433,115-119 9. Y. Wu,B. Messer,Peidong Adv.Mater.2001,13,1487-1489 10. R.Ma,Y. Bando,T. Mori,D. Golberg Chem.Mater.2003,15,3194-3197 11. Q. Yang, J. Sha, X. Ma, Y. Ji, D. Yang Supercond. Sci.Technol.2004,17,31-33 12. P Badica, K Togano, S Awaji, K Watanabe. Supercond. Sci.Technol.2006,19,242-246 13. P.N. Barnes, P.T. Murray, T.Haugan, R.Rogow, G. P. Perram. PHYSICA C,2002,377,578-584 14. J. S. Golightly and A. W. Castleman, Jr. J. Phys. Chem. B.2006 15. C.H. Cheng, Y. Zhao, T. Machi, N. Koshizuka, M. Murakami. PHYSICA C,2003,385,449-460 16. Z. W. Pan,Z. R. Dai,Z. L. Wang Science,2001,291,1947-1949 17. W.N.Kang,H.-J. Kim,E.-M. Choi,C.U.J,Sung-Ik Lee SCIENCE 2001 292 1521-1523 18. H.-x. Lu,H.-w. Sun,G.-x. Li,C.-p. C.,D.-lin Y.,X. Hu CERAMICS INTERNATIONAL.31,2005,105-108 19. C. Buzea,T. Yamashita Supercond.Sci.Technol.2001,14,115-146 20. A.Bezryadin,C.N.Lau,M.Tinkham Nature.2000,404,971-974
摘要: We successfully synthesized MgB2 nanoparticles by Pulsed Laser Deposition (PLD) technique, Liquid Pulsed Laser Deposition (LPLD) technique and MgB2 nanowires. The sizes of the nanoparticles fabricated by PLD technique range from 5 nm to 500 nm while those fabricated by LPLD technique distribute from 5 nm ~ 50 nm. The nanowires have diameters of 80-100 nm and length up to several micrometers. By SQUID measurement, the MgB2 nanoparticles have a similar superconducting transition temperature of 39 K which is close to value of the bulk material. Furthermore, the pinning effect of nanoparticles were also weak. The MgB2 nanowires had a superconducting transition temperature 30K for MgB2 nanowires synthesized on MgO(100) substrate and 35K for MgB2 nanowires synthesized on Si(100) substrate.
我們利用脈衝雷射蒸鍍法製備MgB2奈米微粒,得到粒徑介於5 ~ 500 nm的奈米微粒。首度利用液態脈衝雷射沉積製備MgB2奈米微粒,製備平均粒徑37 nm的MgB2奈米微粒。並以兩階段化學合成製備MgB2奈米線在MgO(100)及Si(100)基板上。由臨界溫度量測可得脈衝雷射蒸鍍法以及液態脈衝雷射沉積製備的MgB2奈米微粒,其臨界溫度值與塊材相近,並沒有明顯的下降,比較ZFC﹝零場冷卻﹞和FC﹝加場冷卻﹞,可得知其結晶性較塊材好。成長在MgO(100)基板上的MgB2奈米線,其臨界溫度 為30 K,成長在Si(100)基板上的MgB2奈米線,其臨界溫度 為35K,與塊材相較,超導性較差,但釘紮效應非常強。
URI: http://hdl.handle.net/11455/17065
其他識別: U0005-3007200722343900
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-3007200722343900
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