Please use this identifier to cite or link to this item:
標題: Characteristics of ZnO films grown on (01-12) sapphire substrates by atomic layer deposition
作者: 蔡坤堯
Tsai, Kuen-Yau
關鍵字: ZnO
atomic layer deposition
出版社: 物理學系所
引用: [1] A. Mang, K. Reimann and St. Rübenacke, Solid State Commun. 94 (1995) 251. [2] P. Yu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A.Ohtomo and H.Koinuma, J. Cryst. Growth 184 (1998) 601. [3] M.H. Huang, Y.Wu, H. Feick, N. Tran, E. Weber, P. Yang, Adv. Mater.13 (2001)113. [4] Y.C. Kong, D.P. Yu, B. Zhang, W. Fang, S.Q. Feng, Appl. Phys. Lett. 78 (2001) 407. [5] S. Liu, J.J. Wu, Mater. Res. Soc. Symp. Proc. 703 (2002) 241. [6] A. Sasaki, W. Hara, A. Matsuda, N. Tateda, S. Otaka S. Akiba , Appl. Phys. Lett. 86 (2005) 231911. [7] H. Tampo, A. Yamada, P. Fons, H. Shibata, K. Matsubara, K. Iwat, S. Niki, Appl. Phys. Lett. 84 (2004) 4412. [8] K. Saito, Y. Yamamoto, A. Matsuda, S. Izumi, T. Uchino, K. Ishida and K. Takahashi, Phys. Stat. Sol. (b) 229 (2002) 925. [9] P.Y. Lin, J.R. Gong ,P.C. Li, T.Y. Lin, D.Y. Lyu, D.Y. Lin, H.J. Lin, T.C. Li, K.J. Chang and W.J. Lin , J. Cryst. Growth 310 (2008) 3024. [10] M.H. Sukkar, H.L. Tuller, Adv. Ceramics 7(1984) 71-79. [11] B. Lin, Z. Fu and Y. Jia , Appl. Phys. Lett. 79, 07934 (2001). [12] E. G. Bynlander, J. Appl. Phys. 49, 1188 (1978). [13] R. Dingle, Phys. Rev. Lett. 23, 579 (1969). [14] D. C. Reynolds, D. C. Look, B. Jogai, and H. Morkoç, Solid StateCommun. 101, 643 (1997). [15] Y. W. Heo, K. Ip, S. J. Pearton, D. P. Norton, J. D. Budia, Appl. Surf. Sci. 252 7442-7448 (2006). [16] L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. Zhang, R. J. Saykally, and P. Yang, Angew. Chem. Int. Ed. 42, 3031 (2003). [17] S. A. Studenikin, N. Golego, and M. Cocivera, J. Appl. Phys. 84, 2287(1998). [18] J. Chen, and T. Fujita, Jpn. J. Appl. Phys. 42 602 (2003). [19] B. P. Zhang, N. T. Binh, Y. Segawa, Y. Kashiwaba, and K. Haga, Appl. Phys. Lett. 84 586 (2004). [20] T. MORIYAMA and S. FUJITA, Jpn. J. Appl. Phys. 44,7919 (2005) [21] T. Suntola and J. Antson, U.S. Patent No. 4,058,430 (1977). [22] T. Suntola, J. Antson, A. Pakkala and S. Lindfors, Soc. Information Display (SID 80) Digest 108 (1980). [23] Mohammad S. Akbar, Naim Moumen, Joel Barnett, Johnny Sim and Jack C. Lee, Appl. Phys. Lett. 86, 032906 (2005) [24] J. R. Gong, D. Jung, N. A. El-Masry, and S. M. Bedair , Appl. Phys. Lett. 57, 400 (1990); DOI:10.1063/1.103675 Issue Date: July 23, 1990. [25] C. Lee,Y. Park and K. Kim, Journal of the Korean Physical Society, Vol. 48, No. 6, June 2006, pp. 1570-1573. [26] E. Ziegler, A. Heinrich, H. Oppermann, and G. Stover, Phys. Status Solidi A 66, 635 ~1981. [27] B. D. Cullity, Elements of X-Ray Diffractions (Addition-Wesley, Reading, MA, 1978), p. 102. [28] B. Lin and Z. Fua and Y. Jia, Appl. Phys. Lett. 79 (2001) 943.
摘要: 在本篇論文中,我們在300oC使用原子層沉積法直接在(01-12)氧化鋁基板上沉積氧化鋅薄膜,並且分別使用二乙基鋅和氧化亞氮做為二族和六族的前驅物。接著探討在不同參數下退火之氧化鋅薄膜的特性,包含不同退火溫度、不同退火時間、不同退火氣氛。氧化鋅薄膜的結構、光學性質和電性分析,我們分別使用X-光繞射儀,場發射掃描式電子顯微術,霍爾量測,光激發光量測和原子力顯微術。依據X-光繞射的結果,氧化鋅薄膜皆顯現出c-軸的優選方向。我們發現經過退火後的氧化鋅薄膜的電性和結構與退火氣氛有很大的關聯性。在本實驗中,我們發現氧化鋅薄膜在氮氣氣氛下退火十分鐘可以有效的改善薄膜的光穿透特性和電性。在此條件下,可得到較高的光學穿透率(~87%),較低的電阻率(~1.12x10-2 Ω∙cm) 和較高的電子移動率(~17.20 cm2/Vs)。
In this thesis, low temperature (RT) zinc oxide (ZnO) films were directly grown on (01-12)sapphire substrates at 300oC by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O). Influences of post-annealing parameters including annealing temperature, annealing time interval and annealing atmosphere on the properties of post-annealing ZnO films were investigated. The structural, optical and transport properties of the post-annealing ZnO films were characterized by θ-to-2θ X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Hall measurements, photoluminescence spectroscopy (PL) and atomic force microscopy (AFM). Based on the XRD results, ZnO films were found to show c-axis preferred orientation. It was found that the transport and structural properties of the ZnO post-annealed films were highly influenced by annealing atmosphere. The most significant improvement in structural and transport properties were obtained for the ZnO film annealed in in N2 atmosphere at 900 oC for 10min. Under the optimum annealing condition, high transparency (~87%), low resistivity of 1.12x10-2 Ω∙cm and high mobility of 17.20 cm2/Vs were achieved in the ZnO films.
其他識別: U0005-0707200818070500
Appears in Collections:物理學系所



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.