Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17079
標題: Direct deposition of low temperature ZnO films on (11-20) sapphire substrates by atomic layer deposition
原子層沉積法直接低溫成長氧化鋅薄膜於(11-20)氧化鋁基板之研究
作者: 郭耿宏
Guo, Geng-Hong
關鍵字: 原子層沉積:氧化鋅
atomic layer deposition
二乙基鋅
ZnO
DEZn
出版社: 物理學系所
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摘要: 本論文研究採用原子層沉積(atomic layer deposition)法生長氧化鋅(ZnO)薄膜於(11-20)面氧化鋁基板上。實驗使用二乙基鋅(DEZn)與高純度氧化亞氮(N2O)做為II與VI族的前驅氣體,使用高度純化之氮氣當作輸送氣體。藉由調變二乙基鋅及氧化亞氮的流量與不同的成長溫度來改變氧化鋅薄膜成長的品質。氧化鋅薄膜之物理特性與表面型態分別使用X-光分析,場發射掃描式電子顯微術,原子力顯微術鑑定之。研究結果顯示,經由製程條件最佳化,某些適合的成長溫度與前驅氣體流量有助於改進氧化鋅薄膜之表面型態與其光學特性
Zinc oxide (ZnO) films were directly grown on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as precursors. Purified N2 was utilized to serve as carrier gas. Low-temperature (LT) ZnO films were deposited by process optimization including the admittances of DEZn and N2O and growth temperature for achieving high quality ZnO films. The physical properties and surface morphologies of ZnO films were investigated by θ-to-2θ X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). Based on the characterization data, both admittances of precursors and deposition temperature were optimized so that high quality ZnO films were achieved.
URI: http://hdl.handle.net/11455/17079
其他識別: U0005-0808200815140000
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0808200815140000
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