Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17089
標題: Physical properties of non-polar GaN films
非極性氮化鎵薄膜物理特性之研究
作者: Wu, Pei-Tsen
吳珮岑
關鍵字: non-polar GaN
非極性氮化鎵
dislocations
non-polar
GaN
threading dislocations
差排
氮化鎵
非極性
貫穿式差排
出版社: 物理學系所
引用: 參考資料 [1] S. Strite and H. Morkoc, J. Vac. Sci. Technol. B10, 1237 (1992). [2] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T.Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M.Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998) . [3] J. Han, M. H. Crawford, R. J. Shul, J. J. Figiel, M. Banas, L. Zhang, Y. K. Song, H. Zhou, and A. V. Nurmikko, Appl. Phys. Lett. 73, 1688 (1998). [4] R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and M. S. Shur, IEEE Electron Device Lett. 18, 492 (1997). [5] S. Yoshida and S. Gonda, Appl. Phy. Lett. 42, 427 (1983). [6] K. Domen, H. Korino, A. Kuramata, T. Tanahashi. Appl. Phys. Lett. 70, 987 (1997). [7] P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K.H. Ploog, Nature (London) 406, 865 (2000). [8] Craven, M.D., S.H. Lim, F. Wu, J.S. Speck, and S.P. DenBaars, Appl. Phys. Lett. 81, 469 (2002) [9] B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 83, 1554 (2003). [10] J. Neugebauer and C.G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996). [11] T. Ogino and M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980). [12] P. Hacke, T. Detchoprohm, K. Hirmatsu, and N. Sawaki, K. Tadatomo and K. Miyake, J. Appl. Phys. 76, 304 (1994). [13] W. Gotz and N. M. Johnson, A. Amano and I. Akasaki, Appl. Phys. Lett. 65, 463 (1994). [14] P.P. Paskova, T. Paskova, B. Monemar, S. Figge, D. Hommel, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura, Superlattices and Microstructures 40, 253 (2006) [15] Paskova, T. Paskov, P.P. Darakchieva, V. Kroeger, R. Hommel, D. Monemar, B. Lourdudoss, S. Preble, E. Hanser, A. Williams, M.N., MRS PROCEEDINGS 955, 19 (2007) [16] Wei-Tsai Liao, the Ph.D thesis, Characteristics of polar and non-polar GaN-based films and light-emitting diodes, 67(2006) [17] D. Hull and D. J. Bacon, Introduction to Dislocations, 3rd ed., Inter. Ser. Mat. Sci. Tech. 37, 105 (1983)
摘要: In this thesis, the physical properties, particularly the dislocation characteristics, of non-polar gallium nitride (GaN) films were investigated. Non-polar GaN films were grown on (1-102) sapphire substrates by Metal organic chemical vapor deposition (MOCVD). The as-grown non-polar GaN films were investigated by θ-to-2θ X-ray diffractometry (XRD), photoluminescence (PL) spectroscopy, transmission electron microscope (TEM) and double-crystal rocking-curve XRD. The results of TEM observations indicate that the density of threading dislocations are very high in the non-polar GaN films, and most of them are mainly Shockley partial dislocations and mixed dislocations rather than pure edge and pure screw dislocations. This result is attributed to the large difference in lattice mismatch along[1-101]sapphire||[0001]GaN and [11-20]sapphire||[1-100]GaN directions so that lots of stacking faults with Shockley partial dislocations are formed during epitaxial growth.
本論文主要探討生長於r-面氧化鋁基板上的a-面非極性氮化鎵薄膜的物理性質,尤其著重在薄膜內部的差排分析。非極性氮化鎵薄膜之生長採用有機金屬氣相沉積(MOVCD)法,其結構與光學性質分別以θ-2θ X-光繞射分析、光激發光光譜分析、穿透式電子顯微術與雙晶振盪X-光繞射分析加以探討。θ-2θ X-光繞射圖顯示非極性氮化鎵之a-面平行於氧化鋁基板之r-面,光激發光光譜圖顯示只有near band edge的發光訊號,未見缺陷發光背景。在穿透式電子顯微術的觀察顯示在非極性氮化鎵薄膜內的差排大多以伯格向量(Burgers vector)為b=1/3[1-100] 之Shockley 部分差排與其他形式之混合差排為主,純螺旋差排與純刃差排相對含量明顯較低,此結果與雙晶振盪X-光繞射的結果相符。而造成非極性氮化鎵薄膜內差排密度綿密的原因源自於a-面非極性氮化鎵薄膜與r-面氧化鋁基板在[1-101]sapphire||[0001]GaN與[11-20]sapphire||[1-100]GaN方向有不同的晶格錯配度,導致薄膜成長的速度不一,使原子在進行排列堆積時容易產生疊差(stacking faults),造成部分差排之形成與相互作用,因而形成高密度的差排。
URI: http://hdl.handle.net/11455/17089
其他識別: U0005-1808200814575400
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1808200814575400
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