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標題: Growth of ZnO nanorods by chemical vapor deposition and it''s applications in dye-sensitized solar cells
作者: 莊宜珈
Chuang, I-chiams
關鍵字: DSSC
出版社: 物理學系所
引用: 【1】H. Tsubomura, M. Matsumura, Y. Nomura and T. Amamiya, “Dye sensitised zinc oxide / aqueous electrolyte / platinum photocell” , Nature 261, 402 (1976) 【2】B. O’ Regan, M. Grätzel, “A low-cost, high-efficiency solar cell based on dye-sensitized colloidal TiO2 films” , Nature 353, 737 (1991) 【3】R.S. Wanger, W.C. Ellis, Appl. Phys. Lett. 4, 89 (1964). 【4】E.I. Givargizov, J. Cryst. Growth 31, 20 (1975). 【5】A.M. Morales and C.M. Lieber, Science 279, 208 (1998). 【6】C.W. Zhou et al., J. of Mater. Res. 18, 245 (2003). 【7】P. Yang and C. M. Lieber, J. of Mater. Res. 12, 2981 (1997). 【8】L.X. Zhao, G.W. Meng, X.S. Peng, X.Y. Zhang, L.D. Zhang, Appl. Phys. A 74, 587 (2002). 【9】J. Zhang and L. Zhang, Solid State Comm. 122, 493 (2002). 【10】Xiaoming Fang, Tingli Ma, Guoqing Guan, Morito Akiyama, Tetsya Kida, Eiichi Abe, Journal of Electroanalytical Chemistry, 570, 2004, 257 – 263. 【11】謝欣偉,國立中興大學物理所碩士論文,2006. 【12】李德龍,國立中興大學物理所碩士論文,2007. 【13】陳重維,國立中央大學物理所碩士論文,2008.
摘要: 本研究利用常壓化學氣相沉積法(APCVD)在藍寶石基板上成功成長出氧化鋅奈米柱。我們發現成長溫度為850℃時氧化鋅奈米柱表面形貌較為均勻;成長溫度為950℃時所成長出的氧化鋅為三角錐狀;其底下氧化鋅薄膜厚度約100 nm,氧化鋅奈米柱長度約8~10μm,直徑200~500 nm,且其直立性良好。以溫度作為區分,在850℃以下通氧流量會和氧化鋅奈米柱的直徑以及氧化鋅奈米柱數量成反比;在870℃以上通氧流量與氧化鋅奈米柱數量成正比,但和氧化鋅奈米柱之直徑成反比。 我們也成功利用長成之氧化鋅奈米柱去製作成染料敏化太陽能電池,染料為N3,電解液使用碘化鋰、碘、TBP與BMII之化合物,量測光源之能量為100 mW/cm2,本研究量測出最好樣品之單位面積電流可達11.7 mA/cm2,Fill Factor (FF)為32.6%,效率最高可到達1.01%。
We have grown ZnO nanowires on sapphire substrate by using a chemical vapor deposition (CVD) system. A layer of 100 nm-thick ZnO film was grown on the sapphire, them vertically oriented nanowires were grown on top of the film. The average length of the nanowires, is about 8 ~ 10 μm and diameter of 200 ~ 500 nm. It was found that the ZnO nanowires are more uniformly aligned at 850℃; at 950℃, the nanowire show thick pyramid bases. At T≦850℃, the diameter of the nanowires increase with the oxygen flux; at T≧870℃, it decreases with O2 flux. ZnO nanowire based dye-sensitized solar cells (DSSCs) prepared on sapphire substrates were sensitized by immersing in an ethanol solution of N3 dye. The short-circuit current density can reach 16.7 mA/cm2, the fill factor (FF) 32.6 % and an power conversion efficiency of 1.44 % at the incident light intensity energy of 100 mW/cm2.
其他識別: U0005-3007200811291500
Appears in Collections:物理學系所



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