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標題: 氮化銦奈米線在磁場中之微波感應電流
Microwave-induced DC current in an InN nanowire device in magnetic fields
作者: Lin, You-Deng
關鍵字: InN
microwave-induced DC current
Weak antilocalization
出版社: 物理學系所
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摘要: We report on the microwave-induced current in an InN nanowire (NW) device in magnetic fields (B) at 1.4 K. The InN NW has a diameter of about 200nm, and Pt electrodes defined by focus ion beam (FIB). At frequencies ranging from few hundred MHz to 24 GHz, we observed a significant microwave-induced DC current through the device. This current also exhibits an oscillatory behavior in B with a period of about 1 T. The oscillating part has an anti-symmetry dependence with respect to the reversal of B, indicating that it is related to a process with broken time-reversal symmetry. We also examined the power dependence of the current signal and found that the induced current is proportional to the microwave power, following the theoretical prediction for a mesoscopic diffusive-transport junction.
本論文是研究當溫度下降到1.4 K,微波輻射在氮化銦(InN)奈米線上,所激發出直流電流的特性以及對外加磁場的關係。在本實驗中所使用的InN樣品是用聚焦離子束(focus ion beam,FIB) 將鉑 (Pt) 沉積在奈米線上作為電極,其中使用的InN奈米線的直徑約為200 nm。微波的頻率範圍介於幾百MHz到24 GHz間,微波照射在樣品上會有直流電流產生,而且此光電流會隨磁場有振盪行為,周期約1 T。我們觀察到振盪的部分與磁場極性翻轉成反對稱的關係,說明了振盪的部分與時間翻轉對稱破壞的傳輸過程相關。我們也發現在低微波功率狀況下電流訊號與微波功率強度相關,在低微波功率狀態下被激發出來的光電流與微波功率強度成正比,這個結果與電子在介觀系統之擴散傳輸理論是吻合。
其他識別: U0005-1706201020504800
Appears in Collections:物理學系所



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