Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17159
標題: Trap Levels of An AlGaN Nanowire Studied by Lorentzian Noise
利用勞倫茲雜訊探討氮化鋁鎵奈米線的缺陷能階
作者: 洪聖席
S.S.Hung
關鍵字: Trap Level
勞倫茲雜訊
AlGaN
Nanowire
Lorentzian Noise
氮化鋁鎵
奈米線
缺陷能階
出版社: 物理學系所
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摘要: 我們利用電子束微影製作氮化鋁鎵奈米線的鈦鋁電極,並藉由變溫量測得到奈米線的雜訊頻譜,其中室溫下的奈米線的電阻為370 kΩ而且會隨著溫度的降低而增加,我們在氮化鋁鎵奈米線的低頻雜訊裡發現到在1 / f 雜訊裡面藏有著勞倫茲雜訊,並且隨著電流的增加,勞倫茲雜訊突起的形狀會越明顯,經由勞倫茲雜訊在65 ~ 294 K隨著溫度而變化的特徵頻率,我們發現在四個溫度的區間的載子活化能,分別為547、348、282、115 meV,此項結果與氮化鋁或氮化鎵奈米線各種不同的缺陷能階相吻合。
The temperature dependence of the excess noise of AlGaN nanowire (NW) device with Ti/Al electrodes defined by e-beam lithography is studied. The resistance of the sample is 370 kΩ at room temperature and increases as the temperature decreases. The AlGaN NW exhibits large low-frequency excess noise and the power spectrum contains a Lorentzian-type noise embedded in the 1/f background. The Lorentzian- like feature becomes more prominent as I increases. Careful investigation of the temperature dependence of the characteristic time of the Lorentzian noise reveals that there are four thermally activated regions in our test temperature range (65 ~ 294 K) with activation energies of 547, 348, 282 and 115 meV, respectively ; they are related to various types of carrier traps in AlN or GaN.
URI: http://hdl.handle.net/11455/17159
其他識別: U0005-1907201014173600
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1907201014173600
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