Please use this identifier to cite or link to this item:
標題: 氧化銦薄膜之結構特性研究
Investigation on the structural characteristics of In2O3 films
作者: Su, Hsin-Lun
關鍵字: In2O3
Twin structure
出版社: 物理學系所
引用: 【1】 Guojia J. Fang, Dejie Li, Bao-Lun Yao, Journal of Physics D:Applied Physics Vol.35 p.3096 (2002). 【2】 B. M. Atave, A. M. Bagamadova, A. M. Djabrailov, V. V. Mamedov, R. A. Rabadanov, Thin Solid Films Vol.260 p.19 (1995). 【3】 S. M. Rozati, T.Ganj, Renewable Energy Vol.29 p.1671 (2004). 【4】 K.H. Choi, J.Y. Kim, Y.S. Lee,H.J.Kim, Thin Solid Films Vol.341 p.152 (1999). 【5】 Yoichi Hoshi, Hiro-omi Kato, Kentaro Funatsu, Thin Solid Films Vol.445 p.245 (2003). 【6】 C. G. Granqvist, A. Hultaker, Thin Solid Films Vol.411 p.1 (2002) 【7】 Kentaro Utsumiu, Osamu Matsunaga, Tsutomu Takahata, Thin Solid Films Vol.334 p.30 (1998). 【8】 Jesper N. Ravn, “Laser-Induced Grating in ZnO” IEEE Journal of Quantum Electronics Vol.28 p.1 (1992). 【9】 Hengxiang Gong, Yinyue Wang, Zhijun Yan, Yinghu Yang, Materials Science in Semiconductor Processing Vol.5 p.31 (2002). 【10】 Walter Water, Sheng-Yuan Chu, Materials Letters Vol.55 p.67 (2002). 【11】 A. R. Phani, M. Passacantando, S. Santucci, Materials Chemistry and Physics Vol.68 p.66 (2001). 【12】 W. J. Lee, Y.-K. Fang, J.-J. Ho, C.-Y. Chen, L-H. Chiou S.-J.Wang, F. Dai, T. Hsieh, R.-Y. Tsai, D. Huang, F. C. Ho, Solid-State Electronics Vol.46 p.477 (2002). 【13】 S. H. Jeong, S. B. Lee, J.-H. Boo, Current Applied Physics Vol.4 p.655 (2004). 【14】 Gabriela .B. Gonzalez, Jerome B. Cohen, Jin-Ha Hwang, Thomas O. Mason, Journal of Applied Physics Vol.89 p.2550 (2001). 【15】Gabriela B. Gonza´ lez, Jerome B. Cohen, Jin-Ha Hwang, and Thomas O. Masona), J. Appl. Phys. Vol.89 p.2550 (2001). 【16】F. Fuchs and F. Bechstedt, Phys. Rev. B Vol.77 p.155107 (2008). 【17】L. Pauling and M. D. Chappell, Z. Krist. Vol.75 p.128 (1930). 【18】 M. J. Hale, J. Z. Sexton, D. L. Winn, A. C. Kummel, J. Chem. Phys. Vol.120 p.12 (2004) 【19】Fan Yang, Jin Ma, Xianjin Feng, Lingyi Kong, Journal of Crystal Growth Vol.310 p.4054 (2008). 【20】J. Narayan, K. Dovidenko, and S. Oktyabrsky, J.Appl. Phys. Vol.84 p.2597 (1998). 【21】Takumi Tomita, Kazuyoshi Yamashita, and Yoshinori Hayafuji, Applied Physics Letters, Vol. 87, 051911 (2005) 【22】Oxford, The basics of crystallography and diffraction 2nd ,(2001) 【23】D. Hull, D. J. Becon ,Introduction to dislocations 3rd , (1984) 【24】Z.X. Mei, Y. Wang, X.L. Du, Z.Q. Zeng, M.J. Ying, H. Zheng, J.F. Jia,Q.K. Xue, Z. Zhang, Journal of Crystal Growth,Vol.289 p.686 (2006). 【25】陳力俊, 材料電子顯微鏡學, 國家實驗研究院儀器科技研究中心 (2006)
摘要: In this study, the structural characteristics of In2O3 films deposited on (0001) sapphire substrates were analysed by transmission electron microscopy (TEM), x-ray diffraction (XRD), and scanning electron microscope (SEM). In2O3 films were grown by atomic layer deposition (ALD) using TMIn (Trimethylindium) and nitrous oxide (N2O). Some of them were deposited with buffer-layers which were thermally treated at elevated temperature. Based on the results of TEM observations, twin crystals having {11-2} twin planes with atomic displacement along <111> directions. By applying g‧b= 0 invisibility criterion analyses, it was found that screw dislocations were generated primarily from the (222)In2O3/(0001)Al2O3. Buffer-layer annealing treatment was found to enable reduction of dislocation density in the In2O3 film.
本論文主要探討生長於(0001)面氧化鋁(sapphire)基板之氧化銦(In2O3)薄膜結構特性。氧化銦薄膜生長採用原子層沈積法(ALD),分別使用三甲基銦(TMIn)與氧化亞氮(N2O)做為銦及氧元素之氣體源,氧化銦結構特性則借重穿透式電子顯微術(TEM)、X光繞射技術(XRD)與掃描式電子顯微術(SEM)加以分析。使用掃描式電子顯微鏡觀察薄膜的表面形態。藉由穿透式電子顯微術觀察並分析得知氧化銦薄膜內具有雙晶之結構缺陷。而雙晶界面及原子移動方向各為{11-2}In2O3及<111>In2O3。此外,本研究應用差排影像消失準則以TEM分析氧化銦內部之各類差排之特性。並採用高解析影像觀察氧化銦雙晶內之晶格排列。比較未成長緩衝層(buffer layer)及生長緩衝層經退火(annealing)之氧化銦樣品之奈米結構特性,由研究結果顯示,在成長緩衝層經退火處理後,氧化銦薄膜內的差排密度明顯減少,結晶品質與表面形態也有顯著的改善。
其他識別: U0005-3006201014485300
Appears in Collections:物理學系所



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.