Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/17324
標題: 生長於氧化釓/ (111) 矽基板上氮化鎵薄膜內部缺陷特性分析之研究
Investigation on the structural defects in the GaN film grown on the (111) Si substrate using a Gd2O3 buffer layer
作者: 林沛鋅
Lin, Pei-Shin
關鍵字: 氮化鎵
GaN
矽基板
缺陷分析
貫穿式差排
Silicon substrate
defect analysis
threading dislocation
出版社: 奈米科學研究所
引用: References [1] S. Nakamura and G. Fasol,” he Blue Laser Diode: GaN Based Light Emitters and Lasers”, Springer, Berlin (1997) [2] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 1417 (1997). [3] H. Amano, I. Akasaki, K. Hiramatsu, N. Koide and N. Sawaki., “Thin Solid Films.” 163, 415 (1988). [4] A. Guillen-Cervantes, Z. Rivera-Alvarez, M. Lopez-Lopez, A. Ponce-Pedraza, C. Guarneros, and V.M. Sanchez-Resendiz., Applied Surface Science 258, 1267 (2011). [5] A. Dadgar, C. Hums, A. Diez, J. Blasing, A. Krost, Journal of Crystal Growth. 297, 279 (2006) . [6] F Reiher, A Dadgar, J Blasing, M Wieneke, M Muller, A Franke, L Reismann, J Christen and A Krost, J. Phys. D: Appl. Phys. 42 055107 (2009). [7] Nobuhiko Sawaki , Toshiki Hikosaka, Norikatsu Koide , Shigeyasu Tanaka, Yoshio Honda, Masahito Yamaguchi, Journal of Crystal Growth. 311, 2867(2009). [8] S. Tripathy, S. L. Teo, V. K. X. Lin, M. F. Chen, A. Dadgar, J. Christen, and A. Krost, P hys. Status Solidi C 7, No. 1, 88–91 (2010). [9] F. Erdem Arkun, Rytis Dargis, Robin Smith, David Williams, Andrew Clark, and Michael Lebby, P hys. Status Solidi C 9, No. 3–4, 814–817 (2012). [10] J. R. Gong, M. F. Yeh, and C. L. Wang, J. Crystal Growth.247, 261 (2003). [11] C. L. Wang, J. R. Gong, W. T. Liao, C. K. Lin, and T. Y. Lin, Thin Solid Films.493, 135 (2005). [12] A. Strittmatter, A. Krost, M. Straburg, V. Turck, D. Bimberg, J. Blasing, J. Christen, Appl. Phys. Lett. 74 (9) 1242 (1999) [13] T. Kikurou, M. Hisashi, I. Tomoyuki, M. Yuriko, K. Yoshiro, K. Yoshinao, and K. Akinori, Jpn. J. Appl. Phys. 45, L478-L481 (2006). [14] M. Fukuda,” Optical Semiconductor Devices”, John Wiley & Sons. Inc. (1999). [15] D. B. Holt, B. G. Yacobi,” Extended defects in semiconductors”, Cambridge University Press (2011). [16] http://en.wikipedia.org/wiki/Main_Page [17] Johannes Weertman, Julia Randall Weertman,”Elementary Dislocation Theory”, Oxford University Press (1969). [18] D. Hull and D. J. Bacon,” Introduction to Dislocations” 4rd, Butterworth –Heinemann (2001). [19] John Price Hirth, Jens Lothein,” Theory of Dislocations”, McGraw-Hill (1968). [20] R. E. Reed-Hill, Physical Metallurgy Principles 3rd, PWS-Kent Pub (1994). [21] Yang Xiang, COMMUNICATIONS IN COMPUTATIONAL PHYSICS, 1, No. 3, 383-424(2006). [22] J. W. Matthews, Epitaxial Growth, Academic, New York (1975). [23] Z. T. Chen, K. Xu, L. P. Guod, Z. J. Yang, Y. Y. Su, X. L. Yang, Y. B. Pan, B. Shen, and H. Zhanga, G. Y. Zhang, J. Cryst. Growth, 294, 156-161 (2006). [24] V. Srikant, J. S. Speck, & D. R. Clarke, J. Appl. Phys. 82, 4286 (1997) [25] J.Y. Shi, L.P. Yu, Y.Z. Wang, G.Y. Zhang, H. Zhang, Appl.Phys.Lett. 80, 2293 (2002). [26] L.P. Yu, J.Y. Shi, Y.Z. Wang, H. Zhang, J. Crystal Growth 268,484-488 (2004). [27] Y.B. Pan, Z.J. Yang, Z.T. Chen, Y. Lu, T.J. Yu, X.D. Hu, K. Xu, G.Y. Zhang, Journal of Crystal Growth 286, 255–258 (2006). [28] Metzger, T., R. Hopler, et al., Philosophical Magazine a-Physics of Condensed Matter Structure Defects and Mechanical Properties 77(4): 1013-1025(1998). [29] 陳力俊等,材料電子顯微鏡學,儀器科技研究中心 (2006) [30] J. W. Edington, Practical Electron Microscopy in Materials Science, chap.3, Van Nostrand Reinhold (1976) [31] J. Goldstein, “Scanning Electron Microscopy and X-Ray Microanalysis” 3rd, Plenum (2003). [32] David B. Williams, C. Barry Carter, "Transmission Electron Microscopy: A Textbook for Materials” [33] 許樹恩,吳泰伯.” x光繞射原理與料結構分析”,國科會精密儀器發展中心(1992) [34] 劉光壁著,”生長於(11-20)或(0001)面氧化鋁基板之氧化鋅薄膜內部差排特性之研究”,國立中興大學(2010) [35] G. Binnig, C.F. Quate, C. Gerber, Atomic force microscope, Phys. Rev. Lett. 56 (9) 930–933(1986). [36] W. Richard Bowen and Nidal Hilal,” Atomic force microscope in process engineering”, Butterworth-Heinemann (2009). [37] 黃澄偉著,”氮化鋁鎵/氮化鎵應變多層結構對氮化鎵薄膜特性影響之研究”逢甲大學(2003). [38] Dodson B W.J. Cryst. Growth 111 376–82 (1991). [39] Stampfl, C. and C. G. Van de Walle.Physical Review B 57(24): R15052-R15055 (1998). [40] Dmitri N. Zakharov and Zuzanna Liliental-Weber,Phys. Rev. B 71, 235334 (2005) [41] S.K. Mathisa, A.E. Romanovb, et al. Journal of Crystal Growth 231: 371–390. [42] Min Lu, Hui-Zhi Fang, hi-Jian Yang, Hua Yang, Li Zi-Lan, Ren Qian, Zhang Guo-Yi and Zhang Bei., Journal of the Korean Physical Society, 45, S673-675(2004)
摘要: 本論文主要藉由X-光雙晶繞射曲線(DCXRD)分析及穿透式電子顯微術檢測探討生長於氧化釓/(111)面矽基板上之氮化鎵薄膜內部的缺陷特性。依Pseudo-Voigt 函數概念將DCXRC氮化鎵半高寬(FWHM)值套入以研究基板與薄膜間扭轉(twisting)與傾斜(tilting)作用之關係。並估算出薄膜內各類差排之密度。實驗利用化學蝕刻計算氮化鎵之差排密度,穿透式電子顯微術(TEM)與X光繞射技術(XRD)量測分析,並將量測成果與理論估算值相互比較。氧化釓/矽基板之氮化鎵內部刃差排密度較螺旋差排密度還高。藉由穿透式電子顯微術本研究進一步了解氮化鎵薄膜、矽基板與氧化釓緩衝層間之方位關係,尤其藉由TEM影像消失準則分析可觀察到薄膜內部包括差排之缺陷分布與型態。高解析度穿透式電子顯微分析並發現高晶格錯配致使氮化鎵內部存在大量錯配差排、差排環和疊差等缺陷。
Characteristics of the defects in the GaN film prepared on the Gd2O3-coated (111) Si substrate were studied in this thesis. The line widths of various double-crystal rocking curves were fitted to Pseudo-Voigt function to evaluate twisting and tilting operations between GaN mosaic cells and substrate so that the densities of different kinds of dislocations in the GaN film were calculated. The densities and characteristics of dislocations in the GaN film were evaluated experimentally by etching pit counts, transmission electron microscopy (TEM) and DCXRC measurements. It was found that the density of dislocations having edge-component is larger than that of dislocations having screw component. The orientation relationships between GaN / Gd2O3 and Gd2O3 / (111)Si were also revealed by TEM analyses. Using g‧b=0 invisibility criterion, various types of dislocations in GaN film were further identified. High resolution TEM (HRTEM) observations show the presence of various kinds of atomic-scaled defects in the GaN film including dislocation loop, stacking fault and misfit dislocations.
URI: http://hdl.handle.net/11455/17324
其他識別: U0005-2906201215241200
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2906201215241200
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