Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/1850
標題: 提升薄膜電晶體非晶矽殘留檢出研究
A Study of Improving Detection Ability of a-Si Residue on TFT Testing
作者: 朱得誠
Chu, Te-Chen
關鍵字: amorphous
非晶矽
backlight
residue
array testing
背光
殘留
陣列檢測
出版社: 機械工程學系所
引用: 參考文獻 [1] DisplaySearch,科技政策研究與資訊中心(STPI),2007年1月,http://cdnet.stpi.org.tw/techroom/market/eedisplay/eedisplay274.htm [2] 黃國有,『Array Process Introduction』,AUO Corp internal training material,2003年6月 [3] 洪木清,『氫化非晶矽對薄膜電晶體特性之影響』,碩士論文,台北科技大學,1992年7月,4-5頁 [4] 楊文輝,『超高解析度薄膜電晶體液晶顯示器驅動晶片之研究』,碩士論文,暨南國際大學,2005年6月,5頁 [5] 顧鴻壽,『光電液晶平面顯示器-技術基礎及應用』,新文京開發出版股份有限公司,2004年,3月,64頁 [6] TFT LCD Introduction,Toppoly Optoelectronics Corp internal training document [7] 莊于田,『液晶顯示器背光源之多相驅動器研製』,碩士論文,中正大學,1994年7月,10頁 [8] 紀國鐘,鄭晃忠合著,『液晶顯示器技術手冊』,台灣電子材料與元件協會,2002年10月,228-229,245-248頁 [9] 戴亞翔,『TFT-LCD面板的驅動與設計』,五南圖書出版股份有限公司,2006年4月,279-281,284-287頁 [10] 行政院國家科學委員會精密儀器發展中心,『微機電系技術與應用(上)』,2004年,3月,470-474頁 [11] Shan Zhu, “Defect Detection Correlation between SAFE and Current Production”, Application Engineering Note ,Photondynamics,July,2004 [12] 孫銘賢,『非晶矽氘材料研製及光照穩定度之研究』,碩士論文,台灣大學,1996年,6月 [13] L.L. Kazmerski, “Polycrystalline and Amorphous Thin Films and Devices”, Academic Press, 1980 [14] P.L. Staebler and C.R. Wronski, J. Appl. Phys.51, PP3262(1980) [15] K. Tanaka,”Glow-Discharge Hydrogenated Amorphous Silicon”, KTK Scientific Publishers, 1989 [16] S. Kimura, Y. Ichioka, K. Suzuki, and R.J.Polastre, SID 92 Digest, PP.628(1992) [17] F. Henley and G. Addiego, SID 91 Digest, PP.686(1991) [18] Chen-Yi Chiang,”Study on Photo-Sensitive Low Dielectric Materials Passivation on Back-channel-Etched Amorphous Silicon Thin Film Transistor, Thesis of master, National Tsing Hua University, 2005 [19] 蕭宏原著,羅正忠、張鼎張譯,『半導體製程技術導論』,台灣培生教育出版股份有限公司,2003年,1月 [20] 刁建成,『ULSI製程技術』,全華科技圖書股份有限公司,2000年 [21] Robert.Boylestad, Louis.Nashelsky, “Electronic Devices and Circuit Theory”, Prentice Hall International Editions Inc, 1996 [22] 蔡嘉文,『TFT面版蝕刻電晶體之自動化檢測』,碩士論文,逢甲大學,2005年7月,11-12頁
摘要: 在液晶顯示器薄膜電晶體的陣列段測試方法有畫素儲存電荷測試、畫素電位光學感測、畫素電位電子束探測等方式,由於目前這幾種電性測試的方法並無法有效的檢測出非晶矽的殘留而往往造成後段在CELL段和模組段的面板報廢,徒增組裝的多餘耗費和製造成本的增加。 本論文的主要目的在於利用傳統的畫素電位光學感測方式並導入背光的功能,藉由非晶矽對光感的靈敏特性,由實驗方法來得到對薄膜電晶體驅動不同的驅動源模型加上不同的驅動背光照度和持續度的關係,對非晶矽殘留缺陷檢出能力的影響。爾後將得到的資料分析找出一組參數最佳化並導入生產線量產品做實際驗證結果可以得到相較以往的檢測方式對非晶矽殘留缺陷的檢出率提高了17%左右,但因為受到背光的影響下在假性缺陷的數目上也稍微增加1.4%。由實驗結果發現,透過開啓背光的方法可以大幅提升對非晶矽殘留的檢出率另外也可免除因為此而更改產品設計,重出光罩的額外花費在成本控製上有顯約的成效。
There are some LCD TFT testing methods on ARRAY site such as testing of pixel electric saving、testing of pixel electric optic、pixel electrical testing of E-beam. Nowadays, because of amorphous silicon residue can not be detected effectively by these kinds of electrical test and most of these amorphous silicon residue will cause panel scrap at Cell or Module site. This will cost a lot of panel assembly wasting and manufacturing prime cost increasing. The major purpose of this thesis is using the testing of pixel electric optic to combine back light function. Because of characteristic of a-Si is photo- sensitive. Taking the experiment to get the detection ability and affection of a-Si residue by driving different pattern to TFT and applying different back light “Intensity” and “Duration”. After the experiment, we do the data collection and find out the optimum parameter then apply to the production line for realistic verification. The result we can get is about 17% higher than the traditional detection rate on a-Si residue. There are also some false defects increasing around 1.4% because of back light function applying. In conclusion, we can discover the experiment result is this method could increase detection ability of a-Si residue enormously and could eliminate the production re-design, photo mask re-tape out. It really can get the obvious cost down effectively.
URI: http://hdl.handle.net/11455/1850
其他識別: U0005-1507200723302400
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1507200723302400
Appears in Collections:機械工程學系所

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