Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2231
標題: 無線傳輸的微壓力感測器
Micro pressure sensor with wireless transmission circuits
作者: 呂柏緯
Lu, Po-Wei
關鍵字: CMOS
CMOS
Wireless transmission
Pressure sensors
無線傳輸
壓力感測器
出版社: 機械工程學系所
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摘要: 本論文利用標準TSMC 0.35 μm 2P4M CMOS製程,製作結合無線射頻系統之壓力感測器,分別設計了電容和FET型式的微壓力感測器,並搭配上不同的電路,使用環狀振盪器作為射頻產生器,並搭配電感天線將訊號以無線傳輸方式輸出。壓力計方面均利用半徑為50 μm的圓型壓力薄膜結構,藉由受壓後薄膜的位移改變以感測壓力。其中電容式微壓力計的電路,藉由直流偏壓供給環狀振盪器產生射頻訊號,由電容式微壓力感測器替代電路中的電容,當電容變化會使得輸出頻率變化;此外FET式微壓力感測器則與放大電路結合,當施壓時會使得感測器輸出功率提升,藉由改變輸出訊號的功率以感測壓力。製程完成後利用蝕刻液,以濕式蝕刻方式,將壓力薄膜結構釋放懸浮,並且使用化學沈積系統沈積高分子材料parylene,將壓力空腔封裝,以量測外界與壓力腔的壓差。 根據實驗結果可得知,當電容式微壓力感測器受到500kPa的壓力時,會使得電容提升,而頻率下降,靈敏度約為8 kHz/kPa。而FET式微壓力感測器受到500kPa的壓力後,會隨著壓力上升而使得功率提升,並且增加最大電壓值,經由測量後可得知工作頻率約為70MHz,靈敏度約為0.0148
Wireless micro pressure sensors were manufactured using the standard 0.35 μm CMOS (complementary metal oxide semiconductor) process and a post-CMOS process. In this study, two different pressure sensors were designed, capacitive and FET (field effect transistor) type, and integration with different circuits. Wireless circuits included a ring oscillator and an antenna. The ring oscillator was used to generate RF (radio frequency) signal and the antenna was utilized to transmit the signal output. The capacitive pressure sensor changed in capacitance when applying a pressure to one, and the ring oscillator converted the capacitance variation of the sensor into the RF signal. The frequency of RF signal changed as the capacitance of the sensor varied. The EFT pressure sensor was combined with an amplifier that can amplify the output signal and increase the sensitivity of the sensor. The post-process employed the etchants to etch the sacrificial layers, and to release the suspended structures, and then used a PDS (parylene deposition system) to seal the etching holes in the pressure sensors. The experimental results showed that the capacitive pressure sensor had a sensitivity of about 8 kHz/kPa and the FET pressure sensor had a sensitivity of about 0.08 mV/kPa. The sensitivity of output power in the FET pressure sensor was 0.0148
URI: http://hdl.handle.net/11455/2231
其他識別: U0005-1108200913520000
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-1108200913520000
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