Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2575
標題: 近接式微影製程之光學繞射與光阻吸附效應研究
An Investigation on the Diffraction and Absorption Effects of Proximity Lithography
作者: 范志威
Fan, Jhy-Wei
關鍵字: Proximity Lithography
近接式微影製程
Diffraction Effects
Absorption Effects
繞射效應
吸附效應
出版社: 機械工程學系所
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摘要: 近接式微影製程為光電元件與微機電系統常用之製程,然而此類製程曝光時常因光學繞射以及光阻之化學反應而產生影像變形,亟需探討其成因與分析其效應。本研究以Dill模型為基礎進行探討,首先以光阻深度與曝光時間為參數探討光阻濃度之變化,光阻濃度變化就會影響其吸收率,以及改變光阻內部之光強度分佈;顯影過程中會將低於特定濃度之光阻去除,本研究進一步以特定濃度以及繞射效應光強度分佈為參數,分析在特定濃度下之光阻形貌,同時規劃實驗以驗證理論模擬之適用性。 研究結果顯示,光阻之光活性化合物濃度會隨著曝光時間改變,但其關係並非線性,等濃度光阻之深度會隨著曝光時間增長而逐漸加深,此效應結合近接曝光之繞射效應影響光阻顯影之輪廓。本研究主要貢獻在於探討近接式微影製程曝光過程中,近場繞射與光阻之光活性化合物濃度對於曝光效果之綜合影響,此結果為近接式微影控制光阻形貌之依據。
Proximity lithography is one of the commonly employed processes for fabricating optics components and micro electromechanical system. However, patterns exposed on the photoresist often distored in the process due to optical diffraction and absorption effects of photoresist. It is an urge issue to investigate the effect. This study, based on the Dill''s model, investigates the effects of absorption of photoresist as well as near-field diffraction on the proximity lithography process. Experiments are also conducted to compare the developed model. The results showed that the intensity, but not the distribution, is affected by the exposure time. Chemical concentration on the photoresist changed in accordance to the exposure time. This concentration then affects the profile of exposed photoresist. The major contribution of this study is to analyze the combined effect of near-field diffraction and chemical concentration on the photoresist, which dominates the profile in the developing process, in the proximity lithography process.
URI: http://hdl.handle.net/11455/2575
其他識別: U0005-3008201003104200
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-3008201003104200
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