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標題: 原子層沉積氧化鋅的光學與結構特性之研究
Study on the Optical and Structural Characteristics of ZnO Fabricated by Atomic Layer Deposition
作者: 江東源
Chiang, Tun-Yuan
關鍵字: 極薄膜
Ultrathin films
Porous silicon nanostructures
Atomic layer deposition
出版社: 機械工程學系所
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摘要: 本研究之目的在探討生長溫度對於氧化鋅極薄膜之光學與結構特性的影響。氧化鋅極薄膜係利用原子層沉積法沉積於矽基板上,並且分別於不同的矽基板溫度(25~200 ℃)下製備而成,而薄膜厚度約為10 nm。隨後,應用高解析度X-光繞射儀、穿透式電子顯微鏡、原子力顯微鏡及光激螢光分光儀等量測,藉以描述氧化鋅極薄膜之材料結構與光激螢光特性。根據實驗量測結果顯示,沉積於矽基板上之氧化鋅極薄膜的結構品質隨著沉積溫度的升高而大幅改善。於200 ℃時有良好的結晶結構,尤其本實驗並未經熱處理程序。此外,應用原子力顯微鏡量測,隨著沉積溫度的增加,氧化鋅極薄膜之表面粗糙度也由0.91 nm(25 ℃)降至0.26 nm(200 ℃)。由於沉積溫度的升高而降低原子缺陷密度,因而提升薄膜的表面品質。經由光激螢光(PL)量測結果顯示,於較高的沉積溫度(200 ℃)下,氧化鋅極薄膜具有強烈的紫外線放射光譜;而室溫(25 ℃)下,在540 nm波長處得到強烈的可見光(綠光)訊號。這顯示高溫沉積可獲得較佳的結晶品質,而低溫沉積則具有相當的晶格缺陷。 另外,透過Volmer-Weber島型薄膜成長模式沉積銀於矽基板上,經由自組式銀奈米島及網格結構當作金屬遮罩,經短時間(1~10 min)乾蝕刻,將矽基板製成奈米柱陣列與多孔矽奈米結構。經檢測結果顯示,經過10 min蝕刻後的兩種結構,從紫外線至紅外線波長區(300~1000 nm)具有0.65~0.69%的極低抗反射率。相較於文獻報告,本實驗樣本結構具有良好的抗反射特性,有效降低反射指數及提升光的吸收率,有利於光電伏特的應用。 另一方面,利用原子層沉積法在矽奈米柱上沉積氧化鋅極薄膜(10 nm)形成氧化鋅/矽奈米柱的異質結構,而沉積溫度為200 ℃。經光激螢光量測,氧化鋅極薄膜沉積於矽奈米柱上比沉積於矽基板上之結構,所發出之紫外線光強度高出約五倍之譜。這結果顯示,此種奈米柱結構提高了體表面積比,允許更多氧化鋅的沉積,相對地提升紫外線光的發光效率。
This study investigates the effect of growth temperature on the optical and structural properties of ultrathin ZnO films on the polished Si substrate. Thickness of the ultrathin ZnO films deposited by atomic layer deposition (ALD) method was about 10 nm. Photoluminescence (PL), X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) techniques were used to measure the properties of ultrathin ZnO films. Experimental results showed that the ultrathin ZnO film deposited at 200 ◦C had excellent ultraviolet emission intensity, and the average roughness of the film surface was about 0.26 nm. Moreover, using a lithography-free approach fabricates silicon nanopillars (Si-NPs) and biomimetics porous silicon (P-Si) with excellent antireflective properties. The self-assembled silver nanostructures (nanoislands and disordered nanogrids) were formed by the Volmer_Weber (island growth) mode during the deposition process, which, in turn, serve as a metal-nanomask for the subsequent dry etching process carried out for fabricating the Si-NPs and P-Si on Si substrates. Reflectivity of about 0.65% was obtained over the spectral region ranging from deep-ultraviolet to infrared light (300~1000 nm). The remarkable antireflective characteristics are attributed to the drastic decrease of effective index of refraction and the enhanced matching effect between air and substrate resulting from the Si nanostructures and suggesting an interesting alternative route for producing nanostructures that might be useful for photovoltaic applications. On the other hand, high efficient room temperature ultraviolet (UV) luminescence is obtained in heterostructures consisting of 10 nm thick ultrathin ZnO films grown on Si-nanopillars fabricated by using self-assembled silver nanoislands as natural metal-nanomask during subsequent dry etching process. Atomic layer deposition was applied for depositing ZnO films on the Si-nanopillars under the ambient temperature of 200 �C. Based on measurements of photoluminescence (PL), an intensive UV emission corresponding to free-exciton recombination (~ 3.31 eV) was observed with a nearly complete suppression of the defect-associated broad visible range emission peak. As compared to the ZnO/Si-substrate, the almost 5 times of magnitude enhancement in the intensity of PL, which peaked around 3.31 eV in the present ultrathin ZnO/Si-nanopillars, is presumably attributed to the high surface/volume ratio inherent to the Si-nanopillars. This allowed considerably more amount of ZnO material to be grown on the template and led to markedly more efficient intrinsic emission.
其他識別: U0005-1001201314171300
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