Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2956
標題: Study on Low-Voltage OTFT by Using Copolymer as The Dielectric Layer
應用共聚合物於介電層的低電壓有機電晶體研究
作者: Huang, Hui-Chen
黃惠真
關鍵字: pentacene
五環素
low voltage
OTFT
低電壓
有機電晶體
出版社: 光電工程研究所
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摘要: 在本實驗中,共聚合物(PS-r-PMMA)被用來當作有機電晶體的絕緣層。共聚合物可以利用簡單的旋轉塗佈的方式均勻地沈積薄膜在含有氫氧基的基板上。再經過烤板加熱,具有官能基的共聚合物將會附著於基板上的氫氧基上,形成像刷子般聚合物膜。之後,再藉由甲苯的沖洗移除沒有反應餘留的共聚合,形成平坦的薄膜。我們可以利用加熱與沖洗的方式去控制薄膜的厚度,這樣的方式也是很有潛力去發展大面積和低成本的製程,像是噴墨印刷,狹縫式塗佈,刮刀法…等。利用共聚物為絕緣層,在烘烤溫度為190°C,150°之下的有機電晶體成功的被製做出來,操作電壓皆小於5V,而次臨界擺伏皆小於0.3 V/dec。
In this work, a random copolymer, PS-r-PMMA, is used as dielectric layer for a pentacene OTFT. The PS-r-PMMA dielectric can be uniformly coated on the surface with hydroxyl groups in a very simple spin coating process. After thermal annealing, a layer of end-functionalized PS-r-PMMA will graft to the OH- group forming polymer brushes. Then dipped samples are in toluene in order to remove the residue PS-r-PMMA, forming a flat and thin film of a few nanometers. We can take advantage of annealing process and rinsing by toluene for thickness control. By means of annealing and rinsing process, PS-r-PMMA has the potential to use in large-are and low-cost fabrication, such as inkjet printing, slot coating, doctor blade. The pentacene-based OTFTs with annealing temperature at 190C, 150C were successfully demonstrated, exhibiting operation voltage as low as 5V and S.S is smaller than 0.3 V/dec.
URI: http://hdl.handle.net/11455/2956
其他識別: U0005-2306200923120800
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