Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2973
標題: Stress Analysis and Carrier Mobility Calculation of InGaAs MOSFETs
砷化銦鎵金氧半場效電晶體之通道應力分析與遷移率計算
作者: 歐陽湘
Hsiang, Ou-Yang
關鍵字: InGaAs
砷化銦鎵
MOSFETs
Stress Analysis
Carrier Mobility
金氧半場效電晶體
通道應力
遷移率
出版社: 光電工程研究所
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Samudra, and Yee-Chia Yeo, “Tunneling feld-effect transistor: effect of strain and temperature on tunneling current,” IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 9, SEPTEMBER 2009. [11] M. H. Lee, S. T. Chang, T.-H.Wu, and W.-N. Tseng, “Driving current enhancement of strained Ge (110) p-Type tunnel FETs and anisotropic effect,” IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 9, 2011. [12] M.H. Lee, B.-F.Hsieh, S.T.Chang, S.W.Lee, "Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineering," accepted by Thin Solid Films, 2011. [13] W.-K. Lin, K.-C. Liu, S.T. Chang, C.-S. Li, "Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-κ HfO2 as gate insulator," accepted by Thin Solid Films, 2011. [14] C.J. Chiu , Z.W. Pei , S.T. Chang , S.P. Chang , S.J. Chang, "Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing," Vacuum, Vol.86, pp.246-249, 2011. [15] M. H. Lee, S. T. Chang, B.-F. Hsieh, J.-J. Huang, and C.-C. Lee, “ Analysis and modeling of nano-crystalline silicon TFTs on flexible substrate with mechanical strain,” J. Nanosci. Nanotechnol. Vol.11, pp.10485-10488, 2011. [16] M. H. Lee, B.-F. Hsieh, T.-H. Wu, and S. T. Chang, “P-type tunneling field effect transistors on (100) and (110) orientation Si substrates,” Japanese Journal of Applied Physics, Vol.50, pp.10PC01-10PC01-3, 2011. [17] S. T. Chang, C.-C. Lee, P. H. Sun, “Technology computer-aided design simulation study for a strained InGaAs channel n-type metal-oxide-semiconductor field-effect transistor with a high-k dielectric oxide layer and a metal gate electrode,” Journal of Vacuum Science and Technology B, vol.29, pp.032203-1-5, 2011. [18] B.-F. Hsieh and S. T. Chang, “Subband structure and effective mass of relaxed and strained Ge (110) PMOSFETs,” Solid-State Electronics, Vol.60, pp.37-41, 2011. [19] C.-C. Lee, S. T. Chang, P.-H. Sun, C.-X. Huang, “Impact of strain engineering on nanoscale strained InGaAs MOSFET devices,” Journal of Nanoscience and Nanotechnology, Vol.11, pp.5623-5627, 2011. [20] S.-H. Liao, S. T. Chang, W.-C. Wang, “ Electrical characteristics of Si/SiGe HBTs on Thin-Film SOI substrate,” Journal of the Korean Physical Society, Vol. 57, pp. 1563-1568, 2010. [21] S. T. Chang, P.-H. Sun, C.-C. Lee, “ Impact of strain engineering on InGaAs NMOSFET with a InGaAs alloy stressor,” Thin Solid Films, Vol.519, pp.1738-1742, 2010. [22] M. H. Lee, S.T. Chang, S. Maikap, C.-Y. Peng, and C.-H Lee, “High Ge content of SiGe channel p-MOSFETs on Si (110) surfaces,” IEEE Electron Device Letters, Vol. 31, pp.141-143 , 2010. [23] J. Huang, S. T. Chang, B.-F. Hsieh, M.-H. Liao, W.-C.Wang, and C.-C. Lee, “Strain engineering of nanoscale strained Si MOS devices," Thin Solid Films, Vol.518, pp.S241-S245 January 2010. [24] S. T. Chang, J. Huang, Ming Tang, and C.-Y. Lin, “Effective mass and subband structure of strained Si in PMOS inversion layer with external stress," Thin Solid Films, Vol.518, pp.S154-S158 January 2010. [25] J. Huang, S. T. Chang, W.-C. Wang, and C.-C. Lee,“Simulation of a nanoscale strained Si NMOSFET with a silicon-carbon alloy stressor," Thin Solid Films, Vol.518, pp.S72-S75 January 2010.(Impact factor 1.909, 3/18) [26] S. T. Chang, W.-C. Wang, C.-C. Lee, and J. Huang, “A TCAD simulation study of impact of strain engineering on nanoscale strained Si NMOSFETs with a silicon-carbon alloy stressor,” Thin Solid Films, Vol.518, pp.1595-1598 December 2009. [27] M.H. Lee, S.T. Chang, S. Maikap, C.-F. Huang, “The role of carbon on performance of strained-Si:C surface channel NMOSFETs,” Solid State Electronics, Vol.52, pp.1569-1572, 2008. [28] M. H. Lee, S. T. Chang, B. 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摘要: 三五族半導體是極具潛力的材料,將有機會取代矽用於未來的CMOS技術。最近,具源/汲極應力源之應變InGaAs n型金氧半場效電晶體也被首次驗證其可行性。在本論文中,我們將透過應力模擬及遷移率計算研究應變InGaAs金氧半場效電晶體的效能。 本論文的內容安排如下: 首先,我們先在第一章介紹三五族材料及電晶體元件的進展。然後,在第二章會說明InGaAs場效電晶體反轉層的電子遷移率計算的方法。接著在第三章會報告我們對n型與p型InGaAs場效電晶體的應力模擬。在第四章,我們提出一個新的通道應力解析解可適用於InGaAs場效電晶體。最後一章則是結論。
III-V materials will be the potential candidates to replace Si in the future CMOS technology. Recently, the strained InGaAs n-MOSFET with S/D Stressors was demonstrated for the first time. In this thesis, we will study the performance of strained InGaAs MOSFETs with S/D Stressor using stress simulation and mobility calculation. This thesis is organized as following: First, we will briefly introduce the overview of III-V materials and transistors in Chapter 1. Electron mobility calculation for InGaAs MOSFET will be given in Chapter 2. Stress simulations for n-MOSFET and p-MOSFET are studied in Chapter 3. In Chapter 4, we propose a new analytical model for channel stress in InGaAs MOSFET with S/D Stressors. Finally, the summary will be concluded in Chapter 5.
URI: http://hdl.handle.net/11455/2973
其他識別: U0005-2406201223475900
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2406201223475900
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