Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2974
標題: Fabrication and Study on Thermal Annealing of Polymer Solar Cells
高分子太陽能電池之熱退火製作研究
作者: 張智翔
Chang, Chih-Hsaing
關鍵字: 高分子太陽能電池
polymer solar cells
熱退火
annraling
出版社: 光電工程研究所
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摘要: 在本論文中,利用P3HT/PCBM當元件的主動層,製作出有機高分子太陽能電池。利用140°C的熱退火,時間為30分鐘將其元件效率提高2.9%。並討論調配濃度的變化、主動層轉速、熱退火溫度、熱退火時間對元件特性有何種影響。本論文並且有做有機複合無機的太陽能電池,無機材料使用非晶矽,其結構為Glass/a-Si p layer/a-Si I layer (nanostruture) / PEDOT:PSS /P3HT/PCBM/Al,效率最 高提升到1.2%。 其製程為用PECVD沉積非晶矽p層和i層,接著再用活性離子蝕刻機 (ICP-RIE)蝕刻i層成表面不規則形狀的奈米結構,在依序分別塗佈PEDOT:PSS、 P3HT/PCBM層最後利用熱蒸鍍機鍍上鋁。
I use P3HT/PCBM to fabricate a polymer solar cell for device of active layer. The efficiency enhance 2.9% by annealing at 140C at 30 minutes. I discuss variation of concentration, spin coating of active layer, difference temperature of annealing, and difference time of annealing for effect of device. And I do organic and inorganic solar cell by combining. By the way, the material is amorphous silicon for inorganic, and P3HT/PCBM for organic. The cell structure is glass/amorphous silicon p layer/amorphous silicon i layer/ PEDOT:PSS/P3HT/PCBM/Al, and the efficiency is 1.2%. Fist I use PECVD to deposit p type amorphous silicon and intrinsic amorphous silicon, and etch intrinsic amorphous silicon to get nanostructure by ICP-RIE, and the structure is irregular. At last I coat PEDOT:PSS, and P3HT/PCBM on I layer(intrinsic amorphous silicon), and deposit Al by thermal evaporator.
URI: http://hdl.handle.net/11455/2974
其他識別: U0005-2008201023405500
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2008201023405500
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