Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/2987
標題: I層特性對異質接面太陽能電池效率之影響
The influence of i-ayer on the performance of HIT solar cells
作者: 嚴玉雯
Yen, Yu-Wen
關鍵字: 氫化非晶矽
amorphous
薄膜太陽電池
電漿輔助化學氣相沉積系統
heterojunction
i-layer
出版社: 光電工程研究所
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摘要: 本論文針對異質接面薄本質層(heterojunction with intrinsic thin layer: HIT)太陽電池進行研究,採用一般典型四英吋(晶向為(100),厚度約為360 μm,電阻率約為 1~10 ohm-cm) n型矽晶圓為基板,製作p (a-Si:H)/i (a-Si:H)/n (c-Si)結構之太陽電池。在實驗的第一階段主要以不同的表面處理方式對矽晶圓表面的少數載子生命週期的影響作為探討,以氫氟酸浸泡與CF4 + O2乾蝕刻去處理矽晶圓表面;第二階段則以40.68 MHz電漿加強化學氣相沈積系統製作氫化非晶矽(a-Si:H) p及i層薄膜,並調變溫度及壓力條件下製作具有不同矽氫鍵結比例的i層氫化非晶矽薄膜,以探討不同矽氫鍵結對太陽電池性能的影響。 傅氏紅外光譜測量結果顯示,增加薄膜內的單矽氫鍵結(SiH)及降低多矽氫鍵結(SiH2或(SiH2)n)會使得氫含量變小、介電係數Ɛ1、Ɛ2強度變大。電流-電壓特性測量則指出採用較低的微結構(多矽氫鍵結佔總矽氫鍵結比例:RS = (SiH2/(SiH+SiH2))的氫化非晶矽 i層可以提昇HIT太陽電池的填充因子,短路電流及轉換效率。 低RS的氫化非晶矽薄膜具有較為緻密及低缺陷密度的結構,使得p/i界面被覆較好,降低界面複合,且載子通過i層的缺陷複合也降低是改善太陽電池性能主要原因。 薄本質層的加入可以減少p/i介面電子電洞對復合,提昇太陽電池的開路電壓、短路電流、填充因子等特性。採用適當厚度及具有較多單矽氫鍵結(SiH)的氫化非晶矽i層可以提昇HIT太陽電池性能。
In this thesis, the heterojunction with intrinsic hydrogenated amorphous silicon (a-Si:H) thin layer (heterojunction with intrinsic thin layer: HIT) solar cells are investigated. The solar cells with structure of p(a-Si:H)/i(a-Si:H)/n(c-Si) are fabricated. The substrate is a typical 4-inch n-type wafer with (100) crystal orientation, 1~10 ohm-cm and about 360 μm thickness. First, HF dip and dry etching are used to passivate the surface. Second, the a-Si:H p- and i-layers are deposited by a 40.68 MHz plasma enhanced chemical vapor deposition. The a-Si:H i-layers are changed by deposition temperature and pressure to selectively control the different silicon to hydrogen (SiH) bonding configurations. The effect of various Si:H bonds on the performance of HIT solar cells are explored. Fourier-transform infrared spectra show that increase the monohydride (SiH) bonds and increasing the polyhydride ((SiH2) or (SiH2)n) bonds will reduce the hydrogen content (CH) and increase the real and imagine of dielectric constants (Ɛ1 and Ɛ2). I-V measurements indicate that the a-Si:H i-layers of HIT solar cells with low microstructure (RS = (SiH2/(SiH+SiH2)) can increase the fill factor, short-circuit current and energy transfer efficiency. Low-RS a-Si:H films are denser and have low defect densities. The passivation of p/i interface by low-RS a-Si:H i-layer can reduce the recombination at the interface and in the bulk of i-layer. Adding a-Si:H i-layer at the p/i interface can effectively passivate the bonding defects due to formation of heterojunction. Reducing the interface recombination significantly increase the open-circuit voltage, short-circuit current and fill factor. Inserting a thin a-Si:H i-layer with more SiH bonds can improve the performance of HIT solar cells.
URI: http://hdl.handle.net/11455/2987
其他識別: U0005-2708201215410300
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2708201215410300
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