Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/3001
標題: 可撓式a-IGZO/Pentacene薄膜電晶體互補式反相器之研究
Study on a-IGZO/Pentacene thin film transistors for flexible complementary inverter
作者: 曾柏傑
Tzeng, Bo-Jie
關鍵字: 可撓式
flexible
互補式反相器
非晶銦鎵鋅氧化物
並五苯
complementary inverter
a-IGZO
Pentacene
出版社: 光電工程研究所
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摘要: 近年來以有機半導體與無機非晶氧化物半導體為基礎之電子及光電元件之研究日益俱增,其優點為低溫製程,可製作於塑膠基板,且相對低廉與簡易之製作方式,適合溶液製程之大面積生產。 於本研究中,吾人使用由紫外光行交聯反應之聚乙烯基苯酚(PVP)與聚三聚氰胺甲醛(PMF)之交聯物(PVP:PMF)做為絕緣層,用以實現全低溫製程。以此薄膜做為閘極介電層,Pentacene有機薄膜電晶體可於30V電壓下進行操作,而a-IGZO非晶氧化物薄膜電晶體可於10V電壓下進行操作。此外,溶液塗佈及低溫烘烤之PVP:PMF製程步驟,其有潛力適用於噴墨製程、刮刀塗佈等大面積印製方式,因此以交聯後之共聚物作為有機與無機電晶體之絕緣層於大面積印製之軟性電子應用上係可行的選擇。 本論文中,利用交聯後之PVP:PMF薄膜作為絕緣層,吾人提出於塑膠基板(PEN)上製作包含P通道Pentacene 薄膜電晶體及N通道a-IGZO薄膜電晶體之互補式反相器。其中,P通道與N通道電晶體具有平衡的電特性,於14V下,反相器轉換電壓為供給電壓之0.5倍,其值為7.06 V,信號增益為8.4V/V。此外,吾人所製作之反相器於撓曲後,其元件為撓曲半徑4 mm,亦可得到轉換電壓為供應電壓之0.5倍,其值為7.11 V,信號增益為8.58V/V。故可知吾人所製作之互補式薄膜電晶體反相器,可適用於軟性邏輯電路之應用。
Research efforts devoted to hybrid based microelectronic and optoelectronic devices have grown significantly in recent years. The advantages of hybrid based devices are low processing temperature which is compatible with the plastic substrates, simple processing procedure that is potentially low cost, and solution process that could be produced in large area. In this study, a Low temperature process thin film transistor was accomplished by using a cross-linked polymer. The Crosslinks which made by Polyvinylphenol (PVP) and Poly(melamine-co-formaldehyde)(PMF) by using UV light to control the crosslinking reaction as the gate dielectric. By utilizing this polymer as gate dielectric, pentacene based organic thin-film transistor could be operated at 30V and a-IGZO based amorphous oxide thin-film transistor could be operated at 10V. Furthermore, the coating and cross-linking process of ultrathin PVP ensure that this technique is potentially compatible with the large area printing methods such as inkjet printing and doctor blade coating. The cross-linked polymer dielectric is therefore a good candidate for OTFT in large area printed flexible electronic applications. We demonstrated an organic/inorganic complementary inverter composed of p channel Pentacene and n channel a-IGZO thin film transistors on plastic substrate(PEN) by utilizing the cross-linked PVP and PMF as dielectrics. This two types of transistors exhibit balanced performance. The inverter has good performance with switching voltage around half of supply voltage which is 7.06V and signal gain of 8.4 V/V at 14V and its components under the bending radius of 4mm. Also we characterize the inverter after bending , the inverter has switching voltage around half of supply voltage which is 7.11V and signal gain of 8.58 V/V , that indicates it is suitable for flexible logic application.
URI: http://hdl.handle.net/11455/3001
其他識別: U0005-0608201217103100
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0608201217103100
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