請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/34215
標題: Deposition rate effect of Alq(3) thin film growth: A Kinetic Monte Carlo study
作者: Lin, Y.J.
李豐穎
Chang, J.C.
Tai, C.K.
Wang, B.C.
Li, F.Y.
關鍵字: light-emitting-diodes
on-solid model
electroluminescence
devices
aluminum
photoluminescence
morphology
efficiency
injection
mechanism
期刊/報告no:: Australian Journal of Chemistry, Volume 61, Issue 8, Page(s) 600-609.
摘要: Applying the Kinetic Monte Carlo (KMC) technique, we successfully investigated the effect of deposition rate on the growth pattern of an Alq(3) thin film. In good agreement with experimental results, our simulation results indicate that there exists a transition growth in terms of the deposition rate that corresponds to the transition between the island growth and random deposition growth. In the regions of island growth ( where the deposition rate is lower than 1.1 angstrom s(-1)) and random deposition growth ( where the deposition rate is higher than 3 angstrom s(-1)), the surface morphology is not suitable for luminant devices because of a high roughness, a larger inner vacancy ratio at higher deposition rate, and low homogeneity at lower deposition rate conditions. Within the transition growth region ( deposition rate is between 1.1 and 3.0 angstrom s(-1)), the homogeneity of the film surface improves as the deposition rate increases. Not only does the pattern of the island structures become blurred, but the inner vacancy ratio and surface roughness also remain low as the deposition rate increases. From our results, there may exist a deposition rate to optimize the Alq(3) film with a suitable surface morphology for luminant devices.
URI: http://hdl.handle.net/11455/34215
ISSN: 0004-9425
文章連結: http://dx.doi.org/10.1071/ch08099
顯示於類別:化學系所

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